Untitled
Abstract: No abstract text available
Text: TQP3M6005 Mid Band Dual LNA 1700-2000 MHz Applications • Base Station receivers Tower-mounted amplifiers 16-pin 4x4mm leadless SMT package Product Features Functional Block Diagram 0.36 dB Noise Figure (single channel) 1700-2000 MHz
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TQP3M6005
16-pin
TQP3M6005
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Untitled
Abstract: No abstract text available
Text: TGA2706-SM 2 Watt C-Band Packaged Power Amplifier Key Features • • • • • • • Measured Performance Frequency Range: 5.5 – 8.5 GHz Power: 34 dBm Psat, 32 dBm P1dB Gain: 31 dB TOI: 42 dBm NF: 7 dB Bias: Vd = 6 V, Id = 1.26 A, Vg = +0.6 V Typical
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TGA2706-SM
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X3DC18E2S
Abstract: No abstract text available
Text: Model X3DC18E2S Rev B PRELIMINARY Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier
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X3DC18E2S
X3DC18E2S
RF-35,
RO4350
20log
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Untitled
Abstract: No abstract text available
Text: MGA-31489 0.1W High Gain Driver Amplifier 1.5GHz ~ 3GHz Data Sheet Description Features Avago Technologies MGA-31489 is a high performance Driver Amplifier MMIC, housed in a standard SOT-89 plastic package. The device features flat high gain with excellent
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MGA-31489
MGA-31489
OT-89
MGA-314389
AV02-2587EN
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Untitled
Abstract: No abstract text available
Text: ALM-32120 0.7GHz – 1.0GHz 2 Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-32120 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the
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ALM-32120
ALM-32120
AV02-1349EN
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Rogers RO4350B microstrip
Abstract: No abstract text available
Text: GX03 Ultra Broadband Capacitor ADVANTAGES APPLICATIONS • Ultra Broadband performance • Ultra Low Insertion Loss • Semi Conductor Data Communications Customers • X7R Characteristics • Receiver Optical Sub-Assemblies • Excellent Return Loss • Transimpedance Amplifier
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16KHz
40GHz
50VDC
S-GX030M1013-N
Rogers RO4350B microstrip
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Untitled
Abstract: No abstract text available
Text: ALM-2712 GPS Filter-LNA-Filter Front-End Module Data Sheet Description Features Avago Technologies’ ALM-2712 is an ultra low-noise GPS front-end module that combines a low-noise amplifier LNA with GPS FBAR filters. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT
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ALM-2712
ALM-2712
AV02-2369EN
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MGA-633P8
Abstract: CM05CH330J50AH RM73B1ETTP100J mga-633p8-tr1g mga 633p8-blkg GRM1555C1H101JD01 MGA633P8
Text: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of
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MGA-633P8
MGA-633P8
75mm3
450MHz
AV02-2329EN
CM05CH330J50AH
RM73B1ETTP100J
mga-633p8-tr1g
mga 633p8-blkg
GRM1555C1H101JD01
MGA633P8
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Untitled
Abstract: No abstract text available
Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous
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AFT26P100â
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Abstract: No abstract text available
Text: User's Guide SLVU859 – February 2013 TPD4E05U06DQAEVM The TPD4E05U06 is an ESD protection device with ultra low capacitance. This device is constructed with a central ESD clamp with two hiding diodes to reduce the capacitive loading. It is rated to dissipate ESD
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SLVU859
TPD4E05U06DQAEVM
TPD4E05U06
IEC61000-4-2
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Untitled
Abstract: No abstract text available
Text: ALM-1912 GPS Filter–LNA Front–End Module Data Sheet Description Features Avago Technologies’ ALM-1912 is a GPS front-end module that combines a GPS FBAR filter with high-gain low-noise amplifier LNA .The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process to
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ALM-1912
ALM-1912
AV02-2218EN
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Untitled
Abstract: No abstract text available
Text: VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2503 is an easy-to-use broadband, high linearity amplifier in a miniaturized wafer level package WLP . The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a
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VMMK-2503
VMMK-2503
12GHz.
100mm
250mm.
AV02-2004EN
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Untitled
Abstract: No abstract text available
Text: MGA-636P8 High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-636P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 mm GaAs
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MGA-636P8
MGA-636P8
CDMA2000
AV02-2991EN
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Untitled
Abstract: No abstract text available
Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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TGF2819-FL
TGF2819-FL
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jrc 78L08
Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
Text: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN
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AN10923
BLF6G15L-250PBRN
BLF6G15L-250PBRN
jrc 78L08
RESISTOR POTENTIOMETER
GRM32ER71H106KA12L
stripline power combiner splitter
GRM31MR71H105KA88L
grm32er71h106ka
transistor J333
AN10923
GRM32ER71H106KA12
jrc78L08
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TL205
Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's
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PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
TL205
TL2322
RO4350
tl233
tl241
587-1818-2-ND
c201
017 C202
tl147
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stripline hybrid
Abstract: 23 01 01
Text: PRODUCT SPECIFICATION QUADRATURE HYBRID / COMBINER SURFACE MOUNT, 3 dB FEATURES • • • • • UMTS & 3G Communications Band Low Loss, High Power, Suspended Stripline Design Surface Mount, Pic-n-Place compatible Low Passive Intermodulation PIM Design
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RF power amplifier MHz
Abstract: No abstract text available
Text: Model X3DC21E2S Rev A Doherty Combiner b Description The X3DC21E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC21E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance
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X3DC21E2S
X3DC21E2S
RF-35,
RO4350
20log
RF power amplifier MHz
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transistor TL131
Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB212507SH
PTFB212507SH
200-watt
H-34288G-4/2
transistor TL131
TL231
tl127
TL130
tl131
transistor tl120
8C802
tl-130
LM78L05ACMND
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jammer slot machine
Abstract: No abstract text available
Text: ALM-3012 GNSS LNA-Filter Front-End Module with optional Differential Outputs Data Sheet Description Features Avago Technologies’ ALM-3012 is an ultra low-noise GNSS Global Navigation Satellite System front-end module that combines a low-noise amplifier (LNA) with
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ALM-3012
ALM-3012
AV02-3026EN
jammer slot machine
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tc 106-10
Abstract: No abstract text available
Text: MGA-31489 0.1W High Gain Driver Amplifier 1.5GHz ~ 3GHz Data Sheet Description Features Avago Technologies MGA-31489 is a high performance Driver Amplifier MMIC, housed in a standard SOT-89 plastic package. The device features flat high gain with excellent
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MGA-31489
MGA-31489
OT-89
MGA-314389
rec13â
AV02-2587EN
tc 106-10
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Untitled
Abstract: No abstract text available
Text: VMMK-2203 0.9-11 GHz E-pHEMT Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary wafer level package WLP . • 1 x 0.5 mm Surface Mount Package
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VMMK-2203
VMMK-2203
100mm
250mm.
AV02-2001EN
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Untitled
Abstract: No abstract text available
Text: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of
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MGA-633P8
MGA-633P8
75mm3
450MHz
AV02-2329EN
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Untitled
Abstract: No abstract text available
Text: ALM-11236 1710 MHz – 1850 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature Data Sheet Description Features Avago Technologies’ ALM-11236 is an easy-to-use GaAs MMIC Tower Mount Amplifier TMA LNA Module with low IL bypass path. The module has low noise and high linearity
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ALM-11236
ALM-11236
ALM-11036
AV02-2848EN
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