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    RQJ0204XGDQA Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RQJ0204XGDQA#H6 Renesas Electronics Corporation Nch Single Power Mosfet -20V 4.5A 39Mohm Mpak/Sc-59 Visit Renesas Electronics Corporation
    RQJ0204XGDQA#H1 Renesas Electronics Corporation Nch Single Power Mosfet -20V 4.5A 39Mohm Mpak/Sc-59 Visit Renesas Electronics Corporation

    RQJ0204XGDQA Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RQJ0204XGDQA Renesas Technology Silicon P Channel MOS FET Power Switching Original PDF
    RQJ0204XGDQATL-E Renesas Technology Transistor Mosfet P-CH 20V 1.6A 3MPAK T/R Original PDF

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    RQJ0204XGDQA

    Abstract: RQJ0204XGDQATL-E SC-59A
    Text: RQJ0204XGDQA Silicon P Channel MOS FET Power Switching REJ03G1320-0300 Rev.3.00 May 24, 2006 Features • Low on-resistance RDS on = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A


    Original     		PDF RQJ0204XGDQA REJ03G1320-0300 PLSP0003ZB-A RQJ0204XGDQA RQJ0204XGDQATL-E SC-59A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0400 Previous: REJ03G1320-0300 Rev.4.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 219 m typ (VGS = –4.5 V, ID = –0.8 A)  Low drive current  High speed switching


    Original     		PDF RQJ0204XGDQA R07DS0293EJ0400 REJ03G1320-0300) PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0400 Previous: REJ03G1320-0300 Rev.4.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 219 m typ (VGS = –4.5 V, ID = –0.8 A)  Low drive current  High speed switching


    Original     		PDF RQJ0204XGDQA R07DS0293EJ0400 REJ03G1320-0300) PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0500 Rev.5.00 Jan 10, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS on = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive


    Original     		PDF RQJ0204XGDQA R07DS0293EJ0500 PLSP0003ZB-A

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    RQJ0204XGDQA

    Abstract: RQJ0204XGDQATL-E SC-59A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009