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    Honeywell Sensing and Control TARS-LCASS

    IMU, ACCEL/GYRO, CAN J1939, AMPS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TARS-LCASS Box 48 1
    • 1 $554.12
    • 10 $520.068
    • 100 $520.068
    • 1000 $520.068
    • 10000 $520.068
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    Mouser Electronics TARS-LCASS 12
    • 1 $520.09
    • 10 $520.09
    • 100 $520.09
    • 1000 $520.09
    • 10000 $520.09
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    Newark TARS-LCASS Bulk 5
    • 1 -
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    Powell Electronics TARS-LCASS 5 5
    • 1 -
    • 10 $577.85
    • 100 $491.17
    • 1000 $433.39
    • 10000 $433.39
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    Chip1Stop TARS-LCASS Bulk 5
    • 1 $499
    • 10 $457
    • 100 $457
    • 1000 $457
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    Master Electronics TARS-LCASS 10
    • 1 $507.39
    • 10 $477.62
    • 100 $477.62
    • 1000 $477.62
    • 10000 $477.62
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    Dakota Micro Inc DMRZ-SRSLC

    RAZERCAM CVBS 170 CAMERA WITH A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DMRZ-SRSLC 1
    • 1 $325
    • 10 $325
    • 100 $325
    • 1000 $325
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    Automation Components Inc A-AN-RS-LCD-F-A10-C5

    10,000 Ohm Thermistor (Type III)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A-AN-RS-LCD-F-A10-C5 Ammo Pack 1
    • 1 $182
    • 10 $182
    • 100 $182
    • 1000 $182
    • 10000 $182
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    Automation Components Inc A-CP-RS-LCD-F-A03-B4

    10,000 Ohm Thermistor (Type II),
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A-CP-RS-LCD-F-A03-B4 Ammo Pack 1
    • 1 $182
    • 10 $182
    • 100 $182
    • 1000 $182
    • 10000 $182
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    Automation Components Inc A-AN-RS-LCD-F-A15-C5

    10,000 Ohm Thermistor (Type III)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A-AN-RS-LCD-F-A15-C5 Ammo Pack 1
    • 1 $182
    • 10 $182
    • 100 $182
    • 1000 $182
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    RSLC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    boost convertor 12v to 24v 2A

    Abstract: MIC3232
    Text: MIC3230/1/2 Constant Current Boost Controller for Driving High Power LEDs General Description The MIC3230/1/2 are constant current boost switching controllers specifically designed to power one or more strings of high power LEDs. The MIC3230/1/2 have an input voltage range from 6V to 45V and are ideal for a


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    PDF MIC3230/1/2 MIC3230/1/2 250mV MIC323x M9999-122310-C boost convertor 12v to 24v 2A MIC3232

    Untitled

    Abstract: No abstract text available
    Text: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge


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    PDF FDB070AN06A0 FDP070AN06A0 O-220AB O-263AB

    sdc 500 pwm control

    Abstract: No abstract text available
    Text: DRV8809 DRV8810 SLVS854B – JULY 2008 – REVISED JUNE 2011 www.ti.com COMBINATION MOTOR DRIVERS WITH DC-DC CONVERTERS Check for Samples: DRV8809, DRV8810 FEATURES • 1 • 2 Configurable to Eight Modes of Combination Motor Driver – Bipolar Stepper Motor Driver


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    PDF DRV8809 DRV8810 SLVS854B DRV8809, 16-Step 800-mA /500-ns /100-ms sdc 500 pwm control

    AN9321

    Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
    Text: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76113DK8 AN9321 AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334

    DS33R41

    Abstract: DS21455 DS21458 DS2155 DS33Z41
    Text: DS33R41 Inverse-Multiplexing Ethernet Mapper with Quad Integrated T1/E1/J1 Transceivers www.maxim-ic.com GENERAL DESCRIPTION FEATURES 10/100 IEEE 802.3 Ethernet MAC MII and RMII Half/Full Duplex with Automatic Flow Control The DS33R41 extends a 10/100 Ethernet LAN


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    PDF DS33R41 DS33R41 400-Ball DS21455 DS21458 DS2155 DS33Z41

    FQP45N03L

    Abstract: FQP45N03
    Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves


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    PDF FQP45N03L 1450pF O-220AB FQP45N03L FQP45N03

    75631P

    Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
    Text: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE


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    PDF HUFA75631P3, HUFA75631S3ST O-220AB O-263AB HUFA75631P3 75631P AN9321 HUFA75631P3 HUFA75631S3ST TB334

    ITF86182SK8T

    Abstract: MS-012AA TB370
    Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V


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    PDF ITF86182SK8T MS-012AA) ITF86182SK8T MS-012AA TB370

    7n10l

    Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
    Text: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes


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    PDF RFD7N10LE, RFD7N10LESM 7n10l 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334

    76639p

    Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
    Text: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic


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    PDF HUF76639P3, HUF76639S3S O-220AB HUF76639P3 76639p HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2

    TR62411

    Abstract: DS2141A DS21Q41B DS21Q41BTN TR54016
    Text: DS21Q41B Quad T1 Framer www.dalsemi.com FEATURES § § § § § § § § § § § § § § § § Four T1 DS1/ISDN-PRI framing transceivers All four framers are fully independent Frames to D4, ESF, and SLC-96 formats 8-bit parallel control port that can be


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    PDF DS21Q41B SLC-96 DS21Q41B 128-PIN 128-PIN 56-G4011-000 TR62411 DS2141A DS21Q41BTN TR54016

    AN9321

    Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
    Text: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3


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    PDF HUFA76413D3, HUFA76413D3S O-251AA O-252AA HUFA76413D3 AN9321 HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334

    AN9321

    Abstract: HUFA75823D3 HUFA75823D3S HUFA75823D3ST TB334 27e5
    Text: HUFA75823D3, HUFA75823D3S Data Sheet November 2000 File Number 4965 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75823D3S HUFA75823D3 Features


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    PDF HUFA75823D3, HUFA75823D3S O-251AA O-252AA HUFA75823D3 75823D AN9321 HUFA75823D3 HUFA75823D3S HUFA75823D3ST TB334 27e5

    AN7254

    Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
    Text: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI


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    PDF RF1K49154 AN7254 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334

    75307

    Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75307P3, HUF75307D3, HUF75307D3S 75307 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334

    75337

    Abstract: 75337P HUFA75337G3 HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334
    Text: HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet November 2000 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUFA75337G3, HUFA75337P3, HUFA75337S3S 75337 75337P HUFA75337G3 HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334

    75307

    Abstract: 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7
    Text: HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet November 2000 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs Title UFA7 07P3, UFA7 07D3, UFA7 07D3 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


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    PDF HUFA75307P3, HUFA75307D3, HUFA75307D3S 75307 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7

    76423P

    Abstract: 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13
    Text: HUFA76423P3, HUFA76423S3S Data Sheet November 2000 File Number 4980 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76423P3 HUFA76423S3S


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    PDF HUFA76423P3, HUFA76423S3S O-220AB O-263AB HUFA76423P3 76423P 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13

    59E-1

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
    Text: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF75309T3ST 59E-1 AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337

    76633s

    Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
    Text: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S


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    PDF HUF76633P3, HUF76633S3S O-220AB O-263AB HUF76633P3 76633s 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407

    76629D

    Abstract: AN9321 HUF76629D3 HUF76629D3S HUF76629D3ST TB334 4692
    Text: HUF76629D3, HUF76629D3S Data Sheet October 1999 File Number 4692.3 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 29D Packaging JEDEC TO-251AA 0V, 54 m, A, GATE SOURCE DRAIN FLANGE HUF76629D3 HUF76629D3S wer OSF ) utho eyw


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    PDF HUF76629D3, HUF76629D3S O-251AA HUF76629D3 76629D AN9321 HUF76629D3 HUF76629D3S HUF76629D3ST TB334 4692

    AN9321

    Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
    Text: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER


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    PDF HUFA75831SK8 MS-012AA HUFA75831Slopment. AN9321 HUFA75831SK8 HUFA75831SK8T MS-012AA TB370

    RSLC

    Abstract: No abstract text available
    Text: VP16322 E1 PERFORMANCE MONITOR 1 OF 2 PERFORMANCE MONITOR CIRCUrTS LOS PCLK FP MFP PCM RSLC RECEIVE DATA SLICER CDRC CLOCK AND DATA RECOVERY RED REM AIS PDVD PULSE DENSITY MONITOR PRSM PSEUDO RANDOM SEQUENCE MONITOR DLEX RBOC RFDL DATA BrT-ORIENTED HDLC LINK


    OCR Scan
    PDF VP16322 RSLC

    44-PIN

    Abstract: DS2151Q DS2151QN DS2153Q TTR62411 1S191 SLC-96 Mode Defined
    Text: DS2151Q DS 2151Q D A L L A S s e m ic o n d u c to r FEATURES T 1 Single—Chip Transceiver PIN ASSIG NM ENT • C om plete D S 1/IS D N -P R I transceiver functionality Functional Blocks nnnnnnnnnnn • Line interface can handle both long and short haul trunks


    OCR Scan
    PDF DS2151Q 32-bit 128-bit SLC-96R DS2151Q 44-PIN DS2151QN DS2153Q TTR62411 1S191 SLC-96 Mode Defined