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    RT600 Search Results

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    RT600 Price and Stock

    OMRON Industrial Automation RT6-0009021

    BUNDLE, TM5-900, W/FIELDBUS ADAP
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    DigiKey RT6-0009021 Bulk 1 1
    • 1 $37235
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    • 100 $37235
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    OMRON Industrial Automation RT6-0007021

    BUNDLE, TM5-700, W/FIELDBUS ADAP
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    DigiKey RT6-0007021 Bulk 1 1
    • 1 $41055
    • 10 $41055
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    GeneSic Semiconductor Inc MBRT60030

    DIODE MOD SCHOTT 30V 300A 3TOWER
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    DigiKey MBRT60030 Bulk 80
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    • 100 $116.90975
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    NAC MBRT60030 25
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    GeneSic Semiconductor Inc MBRT60035

    DIODE MOD SCHOTT 35V 300A 3TOWER
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    DigiKey MBRT60035 Bulk 80
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    NAC MBRT60035 25
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    GeneSic Semiconductor Inc MBRT60080

    DIODE MOD SCHOTT 80V 300A 3TOWER
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    DigiKey MBRT60080 Bulk 80
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    • 100 $116.90975
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    NAC MBRT60080 25
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    Find more RT600 price and stock on Findchips.com

    RT600 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    McMaster-Carr

    Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		PDF SD3933 2002/95/EEC SD3933 McMaster-Carr m174 92196a ATC200B marking h5 92196A1 91252 5050-0037

    t10812

    Abstract: Jensen B 17038 70-12911-04 Jensen* B 17038 B1182 70-12911-2 an 17830 A 009-036-9-001 sangamo capacitor rotary potentiometer dual 60k
    Text: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com MALLORY CONTROLS - WIREWOUND AND SWITCH PRODUCTS


    Original     		PDF 82391D 74S381 74S383 44B235823-1 SM-C-706572 31112J 3242J B-3221-12 t10812 Jensen B 17038 70-12911-04 Jensen* B 17038 B1182 70-12911-2 an 17830 A 009-036-9-001 sangamo capacitor rotary potentiometer dual 60k

    Untitled

    Abstract: No abstract text available
    Text: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The


    Original     		PDF TAN500

    chip ic m7

    Abstract: MPA201 200B 25-mils
    Text: MPA201 0.5 Watts, 12.5 Volts, Class A Linear to 500MHz Hybrid Amplifier GENERAL DESCRIPTION The MPA201 is a common emitter amplifier device designed for broadband performance to 500MHz in a format suitable for microstrip assembly and high reliability applications. Its wide dynamic rage and flexibility make it suitable for a


    Original     		PDF MPA201 500MHz MPA201 500MHz RT6006, 25mils, chip ic m7 200B 25-mils

    Untitled

    Abstract: No abstract text available
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		PDF SD3933 2002/95/EEC SD3933

    FET J134

    Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
    Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original     		PDF 1011LD110B 1011LD110B 110Wpk 1030MHz 20Network 250mA, FET J134 JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor

    McMaster-Carr

    Abstract: SD3933 12AWG 700B M177 MCMASTER 92196A146 ATC200B103MW50X 92196A1 92196A108
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive


    Original     		PDF SD3933 2002/95/EEC SD3933 McMaster-Carr 12AWG 700B M177 MCMASTER 92196A146 ATC200B103MW50X 92196A1 92196A108

    19S101-40ME4

    Abstract: 19S101-40M ut-85 cable 32K242-40ML5 Rosenberger 19S141-40ME4 19S202-40ME4 cable UT 85 32K243 ROSENBERGER 32K243
    Text: Rosenberger_ of North America, LLC Rosenberger is Exploring New Directions in Surface Mount Technology. Surface Mount Coaxial Connectors SMCC for High Frequency Applications. Released: 03 November, 2000 Prepared by: David Via Rosenberger of North America, LLC.


    Original     		PDF

    c1295 battery

    Abstract: ipod touch circuit diagram TPM infineon SLB 9635 TT NEC C1181 nec c1251 Mx612 PC87541 AC45 RS600ME BE-34
    Text: 5 4 3 CPU WR1G2 2 1 01 CPU Thermal Sensor Merom u-FCPGA 479PIN NB Thermal Sensor 3,4 ICS 951461 FSB D 667 MHZ (14) Memory Dual channel ON BOARD 256MB SO-DIMM NORMAL (10) SO-DIMM NORMAL ON BOARD 256MB (12) (11) HDD_PRIMARY DRIVE DDR II CHANNEL A CRT DDC2B


    Original     		PDF 479PIN 256MB RS600ME 15-Pin 10/100/1000BASE-T RJ-45 BCM5787M 10x10) 66/100MHz c1295 battery ipod touch circuit diagram TPM infineon SLB 9635 TT NEC C1181 nec c1251 Mx612 PC87541 AC45 RS600ME BE-34

    mallory date code

    Abstract: McMaster-Carr 92196A146 1200 uF 63V capacitor SD3933 arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European


    Original     		PDF SD3933 2002/95/EEC SD3933 200MHz. mallory date code McMaster-Carr 92196A146 1200 uF 63V capacitor arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177

    Transistor J182

    Abstract: No abstract text available
    Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original     		PDF 1011LD110A 1011LD110A 110Wpk 1030MHz 250mA, Transistor J182

    9966

    Abstract: SHT31 12AWG 700B M177 SD3933 91252 ATC700B122 McMaster-Carr a/IC+oz+9966
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		PDF SD3933 2002/95/EEC SD3933 9966 SHT31 12AWG 700B M177 91252 ATC700B122 McMaster-Carr a/IC+oz+9966

    Untitled

    Abstract: No abstract text available
    Text: MPA201 0.5 Watts, 12.5 Volts, Class A Linear to 500MHz Hybrid Amplifier GENERAL DESCRIPTION The MPA201 is a common emitter amplifier device designed for broadband performance to 500MHz in a format suitable for microstrip assembly and high reliability applications. Its wide dynamic rage and flexibility make it suitable for a


    Original     		PDF MPA201 500MHz MPA201 500MHz RT6006, 25mils,

    1030MHz-1090MHz

    Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
    Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original     		PDF 1011LD110A 1011LD110A 110Wpk 1030MHz 20Network 250mA, 1030MHz-1090MHz capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V

    70-12911-04

    Abstract: 70-12911-2 t10812 20k ohm potentiometer T-10812-71 70-12911-4 Westinghouse CO 8 HELICOPTER bell 76301 18K838263
    Text: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com WIREWOUND AND SWITCH PRODUCTS Type R Potentiometer Reference Data


    Original     		PDF 18C82528 107D176 107D176-24 4088D64 404P513 T-10812-50 T-10812-69 T-10812-71 5SE01904-1 18C82172H01 70-12911-04 70-12911-2 t10812 20k ohm potentiometer T-10812-71 70-12911-4 Westinghouse CO 8 HELICOPTER bell 76301 18K838263

    1000uf, 6.3v electrolytic capacitor

    Abstract: No abstract text available
    Text: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz Preliminary GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The


    Original     		PDF TAN500 1000uf, 6.3v electrolytic capacitor

    92196A146

    Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		PDF SD3933 2002/95/EEC SD3933 92196A146 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr

    mallory date code

    Abstract: McMaster-Carr 12AWG 700B M177 SD3933 st code vishay label
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european


    Original     		PDF SD3933 2002/95/EEC SD3933 200MHz. mallory date code McMaster-Carr 12AWG 700B M177 st code vishay label

    j167

    Abstract: transistor j147 960-1215 transistor 500w LM1436 63v 2200uF 200B TAN500 RT6006 TRANSISTOR J214 M12200
    Text: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The


    Original     		PDF TAN500 j167 transistor j147 960-1215 transistor 500w LM1436 63v 2200uF 200B TAN500 RT6006 TRANSISTOR J214 M12200

    Untitled

    Abstract: No abstract text available
    Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original     		PDF 1011LD110B 1011LD110B 110Wpk 1030MHz 250mA,