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    Sanken Electric Co Ltd

    Sanken Electric Co Ltd RU-4M

    DIODE STANDARD 400V 2A
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    DigiKey RU-4M Bulk 1,000
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    Sanken Electric Co Ltd RU 4M

    Diode Switching 400V 3.5A 2-Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RU 4M 780 136
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    Chip One Stop RU 4M Bulk 780 0 Weeks, 1 Days 5
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    RU4M Datasheets (13)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    RU4M Changzhou Galaxy Electrical Rectifier Diode: Fast Recovery Rectifier: Single: 400V: DO-27: 2-Pin Original PDF
    RU4M EIC Semiconductor Fast Recovery Rectifier Diodes Original PDF
    RU 4M Sanken Electric Fast-Recovery Rectifier Diodes Original PDF
    RU4M Sanken Electric Fast-Recovery Rectifier Diodes Original PDF
    RU4M Sanken Electric Fast-Recovery Rectifier Diodes Original PDF
    RU4M Sanken Electric Silicon Diodes / Silicon Varistors Original PDF
    RU4M Sanken Electric Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 400V AXIAL Original PDF
    RU4M Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    RU4M Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    RU4M Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    RU4M Sanken Electric Fast Recovery Rectifier Diodes Scan PDF
    RU4M-T Allegro MicroSystems DIODE FAST RECOVERY RECTIFIER 400V 3.5A 2AXIAL LEAD Original PDF
    RU4MZ Galaxy Semi-Conductor Holdings HIGH EFFICIENCY RECTIFIER Original PDF

    RU4M Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    RU4AM

    Abstract: No abstract text available
    Text: RU4M-RU4AM High Efficiency Rectifiers VOLTAGE RANGE: 400 - 600 V CURRENT: 3.5 A DO - 27 Features Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropand and s im ilar s olvents


    Original     		DO-27, 041ounces RU4AM PDF

    RU4AM

    Abstract: RU4Z
    Text: SIYU R RU4Z / RU4M / RU4AM 塑封快恢复整流二极管 Plastic Fast Recover Rectifier 反向电压 200 - 600V 正向电流 3.5 A Reverse Voltage 200 to 600V Forward Current 3.5A 特征 Features DO-27 •反向漏电流低 Low reverse leakage 1.0 25.4


    Original     		DO-27 RU4AM RU4Z PDF

    ru4jg

    Abstract: ru4dg
    Text: RU4AG THRU RU4MG GLASS PASSIVATED FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A FEATURE DO-201AD High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500


    Original     		MIL-S-19500 /10sec/0 DO-201AD UL-94 1-Jun-04 1-Jun-04 ru4jg ru4dg PDF

    RU4J

    Abstract: RU4D GF600 RU4A
    Text: RU4AGF THRU RU4MGF SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A FEATURE DO-201AD High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of


    Original     		MIL-S-19500 /10sec/0 DO-201AD UL-94 1-Jul-03 1-Jul-03 RU4J RU4D GF600 RU4A PDF

    Untitled

    Abstract: No abstract text available
    Text: RU4M - RU4AM FAST RECOVERY RECTIFIERS PRV : 400 - 600 Volts Io : 2.0 Amperes DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency


    Original     		DO-201AD DO-201AD UL94V-O MIL-STD-202, PDF

    RS4FS

    Abstract: R02Z RU4AM R02A RU1P RU4DS R02B R02C RM10B RM10Z
    Text: - 70 - ü m RMIO RMIOA RM10B RM10 Z RM11A RM11B RM11C R02 R02A R02B R02C R02Z RS1A RS1B RS3FS RS4FS RU1P RU2 RU2AM RU2B RU2C RU2M RU2YX RU2Z RU3 RU3A RU3AM RU3B RU3C RU3M RU3YX RU4 RÜ4A RU4AM RCJ4B RÜ4C RU4D RU4DS RU4M RU4Y RU4YX RU4Z RU30 RU30A S1X20 £


    OCR Scan     		KM10A RM10B RM10Z RM11A RM11B RM11C RU30A S1K20 300ns 10MAX RS4FS R02Z RU4AM R02A RU1P RU4DS R02B R02C RM10Z PDF

    RU4AM

    Abstract: RU4M
    Text: RU4M - RU4AM FAST RECOVERY RECTIFIERS PRV : 400 - 600 Volts Io : 2.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency


    Original     		DO-201AD DO-201AD UL94V-O MIL-STD-202, RU4AM RU4M PDF

    RU4AM

    Abstract: RU4A NS508
    Text: BL GALAXY ELECTRICAL RU4M Z - RU4AM(Z) VOLTAGE RANGE: 400 - 600 V CURRENT: 3.5 A HIGH EFFICIENCY RECT IFIER FEATURES DO - 27 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropand and


    Original     		DO-27, MIL-STD-202 041ounces RU4AM RU4A NS508 PDF

    DO-201AD

    Abstract: No abstract text available
    Text: RU4AGF THRU RU4MGF SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A DO-201AD FEATURE High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of


    Original     		DO-201AD MIL-S-19500 /10sec/0 UL-94 DO-201AD PDF

    Untitled

    Abstract: No abstract text available
    Text: SIYU R RU4Z / RU4M / RU4AM 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 200 to 600V Forward Current 3.5A 反向电压 200 - 600V 正向电流 3.5 A 特征 Features DO-27 •低的反向漏电流 Low reverse leakage 1.0 25.4


    Original     		DO-27 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIYU R RU4Z / RU4M / RU4AM 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 200 to 600V Forward Current 3.5A 反向电压 200 - 600V 正向电流 3.5 A 特征 Features DO-27 ・低的反向漏电流 Low reverse leakage 1.0 25.4


    Original     		DO-27 PDF

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. RU4M 1. Scope The present specifications shall apply to a RU4M. 2. Outline Type Silicon Diode Structure Resin Molded Applications Flammability:UL94-V0 Equivalent High Frequency Rectification, etc. 3. Absolute maximum ratings No.


    Original     		UL94-V0 10msec. PDF

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


    Original     		50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe PDF

    transistor f422

    Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
    Text: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­


    OCR Scan     		iPD658xx transistor f422 transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK PDF

    bv0T

    Abstract: 658X
    Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­


    OCR Scan     		b4E75S5 QQ3T701 nPD658xx bv0T 658X PDF

    D65806

    Abstract: 9215K1
    Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications


    OCR Scan     		65-MICRON xPD65800 D65806 9215K1 PDF

    RU4A

    Abstract: RS4FS R02B R02Z RU1P RU4AM R02A ru4z R02C RM10B
    Text: - 70 * ü m £ tt « Vr s m Vr r m V (V) m is & Vr 1 FM Tm * (V ) (A) (°C) I FS M Io .If* (A) (°C) (A) isi rc) (V) $ & Æ [S] ft î é I R in a x V Fmax I F (A) T(°C) * (tfA) V r (V) t£ m m TOC) RMI O RM IO A RM 10 B RM 10 Z RM 1 1 A •V y^r y •ï y>r y


    OCR Scan     		KM10A RM10B RM10Z RM11A RM11B RM11C RU30A S1K20 300ns RU4A RS4FS R02B R02Z RU1P RU4AM R02A ru4z R02C PDF

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice PDF

    shindengen mr5060

    Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
    Text: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A


    Original     		5KA10 5KA10A 5KA11 5KA11A 5KA12 5KA12A 5KA13 5KA13A 5KA15 5KA15A shindengen mr5060 TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M PDF

    transistor f422

    Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
    Text: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high


    OCR Scan     		xPD658xx transistor f422 transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f PDF

    SSC9512

    Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
    Text: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China


    Original     		O03EH0 STR-X6768N TMA256B-L STR-X6769 TMB166S-L STR-X6769B TMB206S-L STR-Y6453 VR-60SS STR-Y6456 SSC9512 STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based PDF

    diode ru4d

    Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
    Text: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per­ fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r


    OCR Scan     		aPD658xx diode ru4d ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1 PDF

    RS4FS

    Abstract: R02Z R02c R02A RS3F RU3M RU4AM RU4C R02B RM10B
    Text: - 70 * ü m £ tt « Vr s m Vr r m V (V) m is & Vr 1 FM Tm * ( V) (A) (°C) I F SM Io .If* (A) (°C) ( A) isi rc) (V) $ & Æ [S] ft î é I R in a x V Fmax I F (A) T(°C) * (tfA) Vr (V) t£ m m TOC) RMIO R MI OA R M10 B RM 10 Z RM 1 1 A •V y^r y •ï y>r y


    OCR Scan     		KM10A RM10B RM10Z RM11A RM11B RM11C RU30A S1K20 300ns 30MAX RS4FS R02Z R02c R02A RS3F RU3M RU4AM RU4C R02B PDF

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


    Original     		50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d PDF