DSA0021811
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.
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FQB7N60,
FQI7N60
FQB7N60
DSA0021811
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB4N60, FQI4N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 15nC Typ.
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FQB4N60,
FQI4N60
FQB4N60
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB3N60, FQI3N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ.
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FQB3N60,
FQI3N60
FQB3N60
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB2N60, FQI2N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ.
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FQB2N60,
FQI2N60
FQB2N60
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF12N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. •
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FQPF12N60
O-220F
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ. •
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FQPF1N60
O-220F
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PDF
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fqpf2n60
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF2N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ. •
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Original
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FQPF2N60
O-220F
fqpf2n60
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.
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FQB5N60,
FQI5N60
FQB5N60
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PDF
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fqaf12N60
Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF12N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. •
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FQAF12N60
fqaf12N60
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQD1N60, FQU1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ.
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FQD1N60,
FQU1N60
FQD1N60
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB1N60, FQI1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ.
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Original
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FQB1N60,
FQI1N60
FQB1N60
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQD2N60, FQU2N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ.
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FQD2N60,
FQU2N60
FQD2N60
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ.
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OCR Scan
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FQB12N60,
FQI12N60
0-55Q
D2PAK/TO-263
D2PAK/TO-263
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.
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OCR Scan
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FQB6N60,
FQI6N60
D2PAK/TO-263
D2PAK/TO-263
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ.
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Original
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FQB12N60,
FQI12N60
FQB12N60
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.
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Original
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FQB6N60,
FQI6N60
FQB6N60
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQD3N60, FQU3N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ.
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Original
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FQD3N60,
FQU3N60
FQD3N60
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. •
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OCR Scan
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FQA12N60
0-55Q
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB2N60, FQI2N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ.
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OCR Scan
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FQB2N60,
FQI2N60
D2PAK/TO-263
D2PAK/TO-263
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.
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OCR Scan
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FQB7N60,
FQI7N60
D2PAK/TO-263
D2PAK/TO-263
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PDF
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.
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OCR Scan
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FQB5N60,
FQI5N60
D2PAK/TO-263
D2PAK/TO-263
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PDF
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diode SM 78A
Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. •
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OCR Scan
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FQAF12N60
0-55Q
diode SM 78A
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PDF
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Untitled
Abstract: No abstract text available
Text: SSW/I2N60A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 j~iA Max. @ VOS= 600V Lower Rq^ qn) : 3.892 £2 (Typ.)
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SSW/I2N60A
t00lC)
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PDF
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12n60c
Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT
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G12N6
12N60
S12N6
HGTG12N60C3DR,
HGTP12N60C3DR,
HGT1S12N60C3DRS
GTG12N
12n60c
12n60c3d
12N60
g12n60c3d
S12n-6
12N60C3
HGTP12N60C3DR
GTG12N
12n60 dc
TO-247AB
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PDF
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