4hfan510
Abstract: 8753D ATN4000 MAX3875 MAX3950 optical amplifiers s-parameters ATN-4000 HP85033D
Text: Application Note: HFAN-5.1.0 Rev 0; 03/01 Single-Ended and Differential S-Parameters MAXIM High-Frequency/Fiber Communications Group Maxim Integrated Products 4hfan510.doc 03/14/01 Single-Ended and Differential S-Parameters 1 Overview Differential circuits have been important in
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4hfan510
8753D
ATN4000
MAX3875
MAX3950
optical amplifiers s-parameters
ATN-4000
HP85033D
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47146
Abstract: 09 03 296 6421 marking code s22 CFH800 58202 06069 04514
Text: CFH800 P - HEMT Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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CFH800
OT343
47146
09 03 296 6421
marking code s22
CFH800
58202
06069
04514
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6943-3
Abstract: No abstract text available
Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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OT343
CFH800
Rn/50
6943-3
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transistor Zo 105
Abstract: 6943-3 55086 HEMT marking P 05973
Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz
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OT343
CFH800
OT343
D-130
Rn/50
transistor Zo 105
6943-3
55086
HEMT marking P
05973
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transistor zo 107
Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz
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OT343
CFH400
Q62702-G0116
OT343
vol51
Rn/50
transistor zo 107
9412 transistor
transistor zo 109
51687
72741
TRANSISTOR zo 109 ma
CFH400
9412 opt
i 72741
Hemt transistor
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transistor zo 107
Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz
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OT343
CFH400
Q62702-G0116
volt-69
Rn/50
transistor zo 107
831 transistor
Transistor 933
transistor 131-6
TRANSISTOR zo 109 ma
Hemt transistor
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5252 F 1104
Abstract: 5252 F 1007 5252 F 1005 800T HEMT marking P
Text: CFH800T P - HEMT Target Datasheet Features • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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CFH800T
5252 F 1104
5252 F 1007
5252 F 1005
800T
HEMT marking P
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M 6965
Abstract: HEMT marking D CFH400T 72482 HEMT marking P 74923 HEMT marking K
Text: CFH400T P - HEMT Target Datasheet Features Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz F = 0.6 dB; Ga = 15.5 dB @ 3V; 10mA;
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CFH400T
M 6965
HEMT marking D
CFH400T
72482
HEMT marking P
74923
HEMT marking K
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Untitled
Abstract: No abstract text available
Text: Precision Edge SY10EP32V SY100EP32V FINAL 5V/3.3V ÷ 2 DIVIDER FEATURES • Guaranteed maximum frequency > 4GHz ■ 3.3V and 5V power supply options ■ Guaranteed propagation delay <440ps over temperature ■ Internal 75KΩ input pull-down resistors ■ Wide operating temperature range: –40°C to +85°C
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SY10EP32V
SY100EP32V
440ps
SY10/100EP32V
SY100EP32V
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Untitled
Abstract: No abstract text available
Text: Precision Edge SY10EP32V SY100EP32V FINAL 5V/3.3V ÷ 2 DIVIDER FEATURES • Guaranteed maximum frequency > 4GHz ■ 3.3V and 5V power supply options ■ Guaranteed propagation delay <440ps over temperature ■ Internal 75KΩ input pull-down resistors ■ Wide operating temperature range: –40°C to +85°C
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SY10EP32V
SY100EP32V
440ps
SY10/100EP32V
SY100EP32V
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Untitled
Abstract: No abstract text available
Text: Precision Edge SY10EP32V SY100EP32V FINAL 5V/3.3V ÷ 2 DIVIDER FEATURES • Guaranteed maximum frequency > 4GHz ■ 3.3V and 5V power supply options ■ Guaranteed propagation delay <440ps over temperature ■ Internal 75KΩ input pull-down resistors ■ Wide operating temperature range: –40°C to +85°C
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SY10EP32V
SY100EP32V
440ps
SY10/100EP32V
SY100EP32V
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hp32
Abstract: No abstract text available
Text: Precision Edge Micrel Precision Edge™ SY10EP32V SY100EP32V SY10EP32V SY100EP32V FINAL 5V/3.3V ÷ 2 DIVIDER FEATURES • Guaranteed maximum frequency > 4GHz ■ 3.3V and 5V power supply options ■ Guaranteed propagation delay <440ps over temperature ■ Internal 75KΩ input pull-down resistors
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SY10EP32V
SY100EP32V
440ps
SY10/100EP32V
hp32
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Untitled
Abstract: No abstract text available
Text: CFH400 P - HEMT Target Datasheet Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz F = 0.65dB; Ga = 17.5dB @ 3V; 15mA; f=2GHz
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CFH400
OT343
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SY100EP32V
Abstract: SY100EP32VZC SY100EP32VZCTR SY10EP32V SY10EP32VKC SY10EP32VZC SY10EP32VZCTR
Text: Micrel, Inc. 5V/3.3V ÷ 2 DIVIDER Precision Edge SY10EP32V PrecisionSY100EP32V Edge® SY10EP32V SY100EP32V FEATURES • Guaranteed maximum frequency > 4GHz ■ 3.3V and 5V power supply options ■ Guaranteed propagation delay <440ps over temperature ■ Internal 75KΩ input pull-down resistors
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PrecisionSY10EP32V
SY100EP32V
SY10EP32V
440ps
SY10/100EP32V
M9999-111605
SY100EP32V
SY100EP32VZC
SY100EP32VZCTR
SY10EP32V
SY10EP32VKC
SY10EP32VZC
SY10EP32VZCTR
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Untitled
Abstract: No abstract text available
Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features Broadband Operation DC-4GHz Advanced GaN HEMT Technology RF IN VG Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged
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RF3934D
RF3934D
96mmx4
57mmx0
DS110520
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LT5560
Abstract: GSM repeater circuit
Text: LTC News for Immediate Release For more information, tel. 408-432-1900 Doug Dickinson, Media Relations Mgr., ext. 2233 John Hamburger, Dir., Mkting Comm., ext. 2419 www.linear.com Low Power Active Mixer Offers Wide Bandwidth to 4GHz MILPITAS, CA – May 8, 2006 – A new high performance mixer from Linear Technology
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LT5560
1-800-4-LINEAR
GSM repeater circuit
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sirenza LNA
Abstract: No abstract text available
Text: Advanced SGL-0622Z Pb RoHS Compliant & Green Package Product Description The SGL-0622 is a low power, high gain, fully matched LNA designed for 0.05 - 4GHz operation. This LNA is designed for low power, 2.7 to 3.6V battery operation. This amplifer is fully matched and requires only 4-5
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SGL-0622Z
SGL-0622
400liable
sirenza LNA
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s parameters 4ghz
Abstract: GSH904-89 MAG-S22 s 0934
Text: GSH904-89 Discrete HFET Product Features ● 0. 1 to 4GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3.5 dB Noise Figure Product Description 4 The GSH904-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 4GHz frequency range with 22 dB
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GSH904-89
GSH904-89
100MHz
s parameters 4ghz
MAG-S22
s 0934
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Untitled
Abstract: No abstract text available
Text: Preliminary SGL-0622Z Pb RoHS Compliant & Green Package Product Description The SGL-0622 is a low power, high gain, fully matched LNA designed for 0.1 - 4GHz operation. This LNA is designed for low power, 2.7 to 3.6V battery operation. This amplifer is fully matched and requires only 4-5
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SGL-0622Z
SGL-0622
SGL-0622Z
EDS-104519
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2N6617
Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
Text: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions
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2N66170
HXTR-6101)
HXTR-6102
2N6617)
HXTR-6102)
2N6617
HPAC-70GT,
MIL-S-19500
MIL-STD-750/883.
2N6617
HXTR-6101
HXTR-6102
HXTR6102
2N6617 S parameters
HPAC-70GT
transistor HXTR-6101
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Hewlett-Packard application note 967
Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
Text: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions
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2N66170
HXTR-6101)
HXTR-6102
2N6617)
HXTR-6102)
2N6617
HPAC-70GT,
MIL-S-19500
MIL-STD-750/883.
Hewlett-Packard application note 967
HPAC-70GT
2N6617
HXTR-6102
equivalent of transistor D 2331
hewlett packard application note 972
2N6617 S parameters
TRANSISTOR noise figure measurements application
HXTR-6101
ghz transistor
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fujitsu hemt
Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
Text: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability
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FH40LG
2-12GHz
FHC40LG
FCSI0598M200
fujitsu hemt
fujitsu transistor HEMT
fhc40lg
280AM
low noise hemt
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HXTR-5002
Abstract: HXTR-5102 HXTR-5104 SM 97 S21E HXTR5104 HXTR 5104 s parameters 4ghz
Text: NEW LINEAR POWER TRANSISTOR CHIP COMPONENTS Features - - HXTR-5002 CIRCUITS H E W L E T T ^ PACKARD 380 0.015 TYPICAL INTEGRATED HIGH P1dB LINEAR POWER 29 dBm Typical at 2GHz 27.5 dBm Typical at 4GHz HIGH ASSOCIATED GAIN 12.5 dB Typical at 2GHz 7.5 dB Typical at 4GHz
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HXTR-5002
HXTR-5002
HXTR-5102
HXTR-5104
SM 97
S21E
HXTR5104
HXTR 5104
s parameters 4ghz
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2SC2644
Abstract: No abstract text available
Text: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5 .1 M A X . , • • • High Gain Low IMD fp = 4GHz Typ. 0 .5 5 M A X . 0.45 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC2644
55MAX.
SC-43
961001EAA2'
2SC2644
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