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    S0909 Search Results

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    S0909 Price and Stock

    Murata Manufacturing Co Ltd PKMCS0909E4000-R1

    BUZZER PIEZO 1.5V 9X9MM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PKMCS0909E4000-R1 Digi-Reel 5,722 1
    • 1 $0.95
    • 10 $0.771
    • 100 $0.6282
    • 1000 $0.51304
    • 10000 $0.51304
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    PKMCS0909E4000-R1 Cut Tape 5,722 1
    • 1 $0.95
    • 10 $0.771
    • 100 $0.6282
    • 1000 $0.51304
    • 10000 $0.51304
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    PKMCS0909E4000-R1 Reel 4,000 2,000
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    • 10000 $0.48302
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    Avnet Americas PKMCS0909E4000-R1 Reel 10 Weeks 2,000
    • 1 -
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    • 10000 $0.42364
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    Mouser Electronics PKMCS0909E4000-R1 25,919
    • 1 $0.9
    • 10 $0.749
    • 100 $0.615
    • 1000 $0.488
    • 10000 $0.473
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    Newark PKMCS0909E4000-R1 Cut Tape 7,602 5
    • 1 $0.863
    • 10 $0.763
    • 100 $0.626
    • 1000 $0.594
    • 10000 $0.594
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    TTI PKMCS0909E4000-R1 Reel 2,000 2,000
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    • 10000 $0.447
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    PKMCS0909E4000-R1 Cut Tape 10
    • 1 -
    • 10 $0.77
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    • 1000 $0.77
    • 10000 $0.77
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    TME PKMCS0909E4000-R1 1,085 1
    • 1 $1.18
    • 10 $0.99
    • 100 $0.81
    • 1000 $0.72
    • 10000 $0.72
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    Chip 1 Exchange PKMCS0909E4000-R1 157,067
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    Avnet Abacus PKMCS0909E4000-R1 304,000 13 Weeks 2,000
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    Avnet Asia PKMCS0909E4000-R1 25 Weeks, 5 Days 2,000
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    Chip Stock PKMCS0909E4000-R1 1,200
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    Chip1Stop PKMCS0909E4000-R1 86,000
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    PKMCS0909E4000-R1 Cut Tape 633
    • 1 -
    • 10 $0.69
    • 100 $0.57
    • 1000 $0.475
    • 10000 $0.475
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    New Advantage Corporation PKMCS0909E4000-R1 24,000 1
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    Win Source Electronics PKMCS0909E4000-R1 276,600
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    • 100 $0.509
    • 1000 $0.34
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    ASSMANN WSW components GmbH AMJS0909-0030-BUB-26

    CABLE MOD 8P8C PLUG-PLUG 0.98'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AMJS0909-0030-BUB-26 Bag 250
    • 1 -
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    • 1000 $2.51868
    • 10000 $2.51868
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    ASSMANN WSW components GmbH AMJS0909-0030-BKB-24

    CABLE MOD 8P8C PLUG-PLUG 0.98'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AMJS0909-0030-BKB-24 Bag 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.55228
    • 10000 $2.55228
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    ASSMANN WSW components GmbH AMJS0909-0100-BUB-24

    CABLE MOD 8P8C PLUG-PLUG 3.28'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AMJS0909-0100-BUB-24 Bag 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.4157
    • 10000 $4.4157
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    ASSMANN WSW components GmbH AMJS0909-0100-WHB-26

    CABLE MOD 8P8C PLUG-PLUG 3.28'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AMJS0909-0100-WHB-26 Bag 180
    • 1 -
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    • 1000 $4.13294
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    Find more S0909 price and stock on Findchips.com

    S0909 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1001-7R

    Abstract: EP 950 4320-7R 2540-7R
    Text: P Series 100.195 Watt DC-DC Converters Input voltage up to 150 V DC, surges up to 168 V 1 to 4 isolated outputs 3.3.96 V DC Class I equipment LGA • Extremely slim case 4 TE , fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range


    Original     		PDF S10051 1001-7R EP 950 4320-7R 2540-7R

    IRFL014

    Abstract: siliconix sot-223 marking SiHFL014 SiHFL014-E3
    Text: IRFL014, SiHFL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFL014, SiHFL014 OT-223 18-Jul-08 IRFL014 siliconix sot-223 marking SiHFL014-E3

    IRLZ24

    Abstract: SiHLZ24 SiHLZ24-E3
    Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ24, SiHLZ24 2002/95/EC O-220 O-220 18-Jul-08 IRLZ24 SiHLZ24-E3

    SiHFL214

    Abstract: siliconix sot-223 marking IRFL214 SiHFL214-E3
    Text: IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRFL214, SiHFL214 2002/95/EC OT-223 OT-223 18-Jul-08 siliconix sot-223 marking IRFL214 SiHFL214-E3

    IRFU210

    Abstract: IRFR210 SiHFR210 SiHFR210-E3 SiHFU210
    Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8


    Original     		PDF IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252) IRFU210 IRFR210 SiHFR210-E3

    IRFL210

    Abstract: SiHFL210 SiHFL210-E3
    Text: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 • Dynamic dV/dt Rating Qgs (nC) 1.8 • Repetitive Avalanche Rated 4.5 • Fast Switching Qgd (nC) Configuration


    Original     		PDF IRFL210, SiHFL210 2002/95/EC OT-223 OT-223lectual 18-Jul-08 IRFL210 SiHFL210-E3

    2101-7R

    Abstract: 1001-7R Schroff 2660-7R 3020-7R
    Text: P Series 120.195 Watt DC-DC Converters Input voltage up to 150 V DC 1 to 4 isolated outputs 3.3.96 V DC 4242V DC I/O electric strength test voltage LGA • Extremely slim case 4 TE , fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range


    Original     		PDF S10051 2101-7R 1001-7R Schroff 2660-7R 3020-7R

    IRFR110

    Abstract: No abstract text available
    Text: IRFR110, IRFU110, SiHFR110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFR110, IRFU110, SiHFR110 SiHFU110 O-252) 2002/95/EC IRFR110

    Si4946BEY-T1-E3

    Abstract: Si4946BEY SI4946BEY-T1-GE3
    Text: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4946BEY 2002/95/EC Si4946BEY-T1-E3 Si4946BEY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch


    Original     		PDF Si7190DP 2002/95/EC Si7190DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    irfr9010

    Abstract: No abstract text available
    Text: IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9010, SiHFR9010)


    Original     		PDF IRFR9010, IRFU9010, SiHFR9010 SiHFU9010 2002/95/EC 18-Jul-08 irfr9010

    IRLL110

    Abstract: siliconix sot-223 marking SiHLL110T-E3a SIHLL110 SiHLL110Ta marking g10
    Text: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel


    Original     		PDF IRLL110, SiHLL110 2002/95/EC OT-223 18-Jul-08 IRLL110 siliconix sot-223 marking SiHLL110T-E3a SiHLL110Ta marking g10

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch


    Original     		PDF Si7190DP 2002/95/EC Si7190DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4485DY 2002/95/EC Si4485DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    2101-7R

    Abstract: 1001-7R S0909 46607
    Text: P Series 120.195 Watt DC-DC Converters Input voltage up to 150 V DC 1 to 4 isolated outputs 3.3.96 V DC Class I equipment LGA • Extremely slim case 4 TE , fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range


    Original     		PDF S10051 2101-7R 1001-7R S0909 46607

    SQM110N04-03L-GE3

    Abstract: DEVICE MARKING 03L
    Text: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.0035 RDS(on) (Ω) at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQM110N04-03L AEC-Q101 2002/95/EC O-263 SQM110N04-03L-GE3 18-Jul-08 SQM110N04-03L-GE3 DEVICE MARKING 03L

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch


    Original     		PDF Si7190DP 2002/95/EC Si7190DP-T1-GE3 18-Jul-08

    IRFL9014

    Abstract: SiHFL9014 SiHFL9014-E3 IRFL9014PBF
    Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFL9014, SiHFL9014 2002/95/EC OT-223 OT-223 18-Jul-08 IRFL9014 SiHFL9014-E3 IRFL9014PBF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4154DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 36 0.0039 at VGS = 4.5 V 33 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4154DY 2002/95/EC SI4154DY-T1-GE3 18-Jul-08

    Si4485DY

    Abstract: si4485
    Text: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4485DY 2002/95/EC Si4485DY-T1-GE3 11-Mar-11 si4485

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch


    Original     		PDF Si7190DP 2002/95/EC Si7190DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch


    Original     		PDF Si7190DP 2002/95/EC Si7190DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5513CDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5513CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si5513CDC 18-Jul-08

    SI4485DY

    Abstract: No abstract text available
    Text: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4485DY 2002/95/EC Si4485DY-T1-GE3 18-Jul-08