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Vishay Siliconix SI7190DP-T1-GE3 MOSFET N-CH 250V 18.4A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7190DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.825	Buy Now
ES Components	SI7190DP-T1-GE3					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI7190DP-T1-GE3 Mosfet Transistor, N Channel, 18.4 A, 250 V, 98 Mohm, 10 V, 2 V \|Vishay SI7190DP-T1-GE3
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Newark	SI7190DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI7190DPT1GE3 N-CHANNEL 250-V (D-S) MOSFET Power Field-Effect Transistor, 4.4A I(D), 250V, 0.118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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ComSIT USA	SI7190DPT1GE3		3,970			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Huntington SI7190DP-T1-GE3 Trans MOSFET N-CH 250V 18.4A 8-Pin PowerPAK SO T/R / MOSFET N-CH 250V 18.4A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SI7190DP-T1-GE3		20,757			1 - 10 - 100 $1.471 1000 $1.218 10000 $1.218	Buy Now

SI7190DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI7190DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 18.4A 8-SOIC		Original	PDF

SI7190DP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch	Original	PDF	Si7190DP 2002/95/EC Si7190DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch	Original	PDF	Si7190DP 2002/95/EC Si7190DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SI7190DP Abstract: No abstract text available Text: SPICE Device Model Si7190DP www.vishay.com Vishay Siliconix N-Channel 250 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si7190DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
M 721 Abstract: AN609 Text: Si7190DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	Si7190DP AN609, 21-Oct-08 M 721 AN609
Si7190DP Abstract: No abstract text available Text: SPICE Device Model Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si7190DP 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch	Original	PDF	Si7190DP 2002/95/EC Si7190DP-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch	Original	PDF	Si7190DP 2002/95/EC Si7190DP-T1-GE3 11-Mar-11
si7190 Abstract: No abstract text available Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET	Original	PDF	Si7190DP Si7190DP-T1-GE3 18-Jul-08 si7190
Untitled Abstract: No abstract text available Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch	Original	PDF	Si7190DP 2002/95/EC Si7190DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch	Original	PDF	Si7190DP 2002/95/EC Si7190DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	PDF	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477