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    SI7190 Search Results

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    SI7190 Price and Stock

    Vishay Siliconix SI7190ADP-T1-RE3

    MOSFET N-CH 250V 4.3A/14.4A PPAK
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    DigiKey SI7190ADP-T1-RE3 Digi-Reel 5,855 1
    • 1 $2.62
    • 10 $1.687
    • 100 $2.62
    • 1000 $0.85663
    • 10000 $0.85663
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    SI7190ADP-T1-RE3 Cut Tape 5,855 1
    • 1 $2.62
    • 10 $1.687
    • 100 $2.62
    • 1000 $0.85663
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    SI7190ADP-T1-RE3 Reel 3,000 3,000
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    • 10000 $0.75938
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    Vishay Siliconix SI7190DP-T1-GE3

    MOSFET N-CH 250V 18.4A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7190DP-T1-GE3 Reel 3,000
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    ES Components SI7190DP-T1-GE3
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    Vishay Intertechnologies SI7190ADP-T1-RE3

    N-CHANNEL 250-V (D-S) MOSFET - Tape and Reel (Alt: SI7190ADP-T1-RE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7190ADP-T1-RE3 Reel 26 Weeks 6,000
    • 1 -
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    Mouser Electronics SI7190ADP-T1-RE3 22,592
    • 1 $2.09
    • 10 $1.48
    • 100 $1.16
    • 1000 $0.857
    • 10000 $0.764
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    Verical SI7190ADP-T1-RE3 161 8
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    • 10 $0.9558
    • 100 $0.7791
    • 1000 $0.7791
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    Arrow Electronics SI7190ADP-T1-RE3 Cut Strips 161 26 Weeks 1
    • 1 $1.0506
    • 10 $0.9558
    • 100 $0.7791
    • 1000 $0.7791
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    Newark SI7190ADP-T1-RE3 Cut Tape 6,711 1
    • 1 $1.97
    • 10 $1.67
    • 100 $1.36
    • 1000 $1.36
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    SI7190ADP-T1-RE3 Reel 6,000
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    • 10000 $0.778
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    Onlinecomponents.com SI7190ADP-T1-RE3 1,296
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    • 100 $1.37
    • 1000 $1.32
    • 10000 $1.17
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    TTI SI7190ADP-T1-RE3 Reel 6,000
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    • 10000 $0.76
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    EBV Elektronik SI7190ADP-T1-RE3 27 Weeks 3,000
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    Vishay Intertechnologies SI7190DP-T1-GE3

    Mosfet Transistor, N Channel, 18.4 A, 250 V, 98 Mohm, 10 V, 2 V |Vishay SI7190DP-T1-GE3
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    Newark SI7190DP-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SI7190DPT1GE3

    N-CHANNEL 250-V (D-S) MOSFET Power Field-Effect Transistor, 4.4A I(D), 250V, 0.118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI7190DPT1GE3 3,970
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    Find more SI7190 price and stock on Findchips.com

    SI7190 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7190ADP-T1-RE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 250V POWERPAK SO-8 Original PDF
    SI7190DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 18.4A 8-SOIC Original PDF

    SI7190 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch


    Original     		PDF Si7190DP 2002/95/EC Si7190DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch


    Original     		PDF Si7190DP 2002/95/EC Si7190DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI7190DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7190DP www.vishay.com Vishay Siliconix N-Channel 250 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7190DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    M 721

    Abstract: AN609
    Text: Si7190DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si7190DP AN609, 21-Oct-08 M 721 AN609

    Si7190DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7190DP 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch


    Original     		PDF Si7190DP 2002/95/EC Si7190DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch


    Original     		PDF Si7190DP 2002/95/EC Si7190DP-T1-GE3 11-Mar-11

    si7190

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si7190DP Si7190DP-T1-GE3 18-Jul-08 si7190

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch


    Original     		PDF Si7190DP 2002/95/EC Si7190DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch


    Original     		PDF Si7190DP 2002/95/EC Si7190DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477