Untitled
Abstract: No abstract text available
Text: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SiS434DN
2002/95/EC
SiS434DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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transistor 1047
Abstract: SC70-5L SiP21106 SiP21107 SiP21108 TSC75-6L TSOT23-5L SIP21106DR-12-E3 SIP21107DR-12-E3 SIP21106DR
Text: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low
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SiP21106
SiP21107
SiP21108
150-mA
11-Mar-11
transistor 1047
SC70-5L
TSC75-6L
TSOT23-5L
SIP21106DR-12-E3
SIP21107DR-12-E3
SIP21106DR
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Untitled
Abstract: No abstract text available
Text: SiS402DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SiS402DN
2002/95/EC
SiS402DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR416DP
2002/95/EC
SiR416DP-T1-GE3
11-Mar-11
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35-AG
Abstract: No abstract text available
Text: SiS402DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SiS402DN
2002/95/EC
SiS402DN-T1-GE3
11-Mar-11
35-AG
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiJ400DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.004 at VGS = 10 V 32 0.005 at VGS = 4.5 V 32 VDS (V) 30 Qg (Typ.) 45 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21
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SiJ400DP
2002/95/EC
SiJ400DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SQM110N08-05
Abstract: No abstract text available
Text: SQM110N08-05 Vishay Siliconix Automotive N-Channel 75 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
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SQM110N08-05
AEC-Q101
2002/95/EC
O-263
SQM110N08-05-GE3
18-Jul-08
SQM110N08-05
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Untitled
Abstract: No abstract text available
Text: Si8461DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.100 at VGS = - 4.5 V - 3.7 0.118 at VGS = - 2.5 V - 3.4 0.140 at VGS = - 1.8 V - 3.1 0.205 at VGS = - 1.5 V -2 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21
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Si8461DB
2002/95/EC
Si8461DB-T2-E1
18-Jul-08
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1093 SO-8
Abstract: SIR428DP-T1-GE3 SO8 1093 SiR428DP
Text: New Product SiR428DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 30g 0.0095 at VGS = 4.5 V 30g VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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SiR428DP
2002/95/EC
SIR428DP-T1-GE3
18-Jul-08
1093 SO-8
SIR428DP-T1-GE3
SO8 1093
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SIR416DP-T1-GE3
Abstract: SiR416DP
Text: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR416DP
2002/95/EC
SiR416DP-T1-GE3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR416DP
2002/95/EC
SiR416DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5471DC
2002/95/EC
Si5471DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR416DP
2002/95/EC
SiR416DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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rf transformer sm-22
Abstract: SM2231 S0910 SM223 ct 440 SM-2231 10320 10440
Text: ISO 9001 CERTIFIED E-Series RF 3:1 Transformer 10 - 440 MHz Features ETC3-1 SM-22 * 3:1 Impedance Ratio Specifications @ 25°C 10 - 440 MHz Frequency Range Maximum 3 dB 2 dB 1 dB Insertion Loss 10-440 MHz 10-320 MHz 10-100 MHz Schematic Function Primary dot
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SM-22
S0910
rf transformer sm-22
SM2231
SM223
ct 440
SM-2231
10320
10440
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Untitled
Abstract: No abstract text available
Text: SiS402DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SiS402DN
2002/95/EC
SiS402DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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schroff power supply
Abstract: No abstract text available
Text: PC Series 190.230 Watt AC-DC Converters Converter with single stage AC to DC conversion and PFC No electrical isolation input to output Input voltage range 85 95 .255 V AC LGA • Extremely slim case (4TE), fully enclosed • Single outputs for 72 and 85 V DC loads
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1901-7D
1902-7D
25Protective
S10025
schroff power supply
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Untitled
Abstract: No abstract text available
Text: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low
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Original
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SiP21106
SiP21107
SiP21108
150-mA
2002/95/EC.
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP60N10-18P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.0183 at VGS = 10 V 60 0.023 at VGS = 8.0 V 53 Qg (Typ.) 48 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUP60N10-18P
2002/95/EC
O-220AB
SUP60N10-18P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiJ400DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.004 at VGS = 10 V 32 0.005 at VGS = 4.5 V 32 VDS (V) 30 Qg (Typ.) 45 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21
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SiJ400DP
2002/95/EC
SiJ400DP-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SiS434DN
2002/95/EC
SiS434DN-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR406DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0038 at VGS = 10 V 40g 0.0048 at VGS = 4.5 V 40g VDS (V) 25 Qg (Typ.) 15.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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SiR406DP
2002/95/EC
SiR406DP-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP60N10-18P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.0183 at VGS = 10 V 60 0.023 at VGS = 8.0 V 53 Qg (Typ.) 48 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUP60N10-18P
2002/95/EC
O-220AB
SUP60N10-18P-E3
11-Mar-11
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PDF
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Si3456DDV
Abstract: a1615
Text: SPICE Device Model Si3456DDV Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si3456DDV
18-Jul-08
a1615
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Untitled
Abstract: No abstract text available
Text: SQM110N04-04 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.0035 RDS(on) (Ω) at VGS = 4.5 V - ID (A) • TrenchFET Power MOSFET
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SQM110N04-04
AEC-Q101
2002/95/EC
O-263
SQM110N04-04-GE3
18-Jul-08
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PDF
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