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    S11 MARK SMD Search Results

    S11 MARK SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    S11 MARK SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NC7001

    Abstract: 3 to 10 GHz bandpass filter 3 to 7 GHz bandpass filter
    Text: SAW Bandpass Filter F1G56 Features z GPS applications z Usable bandwidth of 2 MHz z No impedance matching require for operation at 50 Ω z SMD Package 2.0 mm x 1.6 mm× 0.7 mm z Single-ended Operation z RoHS Compliant Package Dimensions 2 3 3 2 4 4 1 LQ


    Original     		PDF F1G56 300mm/min NC7001-AS02 NC7001 3 to 10 GHz bandpass filter 3 to 7 GHz bandpass filter

    FC 0137

    Abstract: No abstract text available
    Text: SAW Bandpass Filter F1G95 Features z US-PCS applications z Usable bandwidth of 30 MHz z No impedance matching require for operation at 50 Ω z SMD Package 2.0 mm x 1.6 mm× 0.7 mm z Single-ended Operation z RoHS Compliant Package Dimensions 4 3 3 1 2 2 4


    Original     		PDF F1G95 300mm/min NC7006-AS01 FC 0137

    3 to 10 GHz bandpass filter

    Abstract: No abstract text available
    Text: SAW Bandpass Filter AGSF-G56 Features z GPS applications z Usable bandwidth of 2 MHz z No impedance matching require for operation at 50 Ω z SMD Package 2.0 mm x 1.6 mm× 0.7 mm z Single-ended Operation z RoHS Compliant Package Dimensions 2 3 3 2 1 4 4


    Original     		PDF AGSF-G56 300mm/min 3 to 10 GHz bandpass filter

    mark 641

    Abstract: bandpass filter 190 mhz 7261 Ink
    Text: SAW Bandpass Filter F1G84 Features US-PCS applications Usable bandwidth of 60 MHz No impedance matching require for operation at 50 Ω SMD Package 2.0 mm x 1.6 mm× 0.6 mm Single-ended Operation RoHS Compliant Package Dimensions AN g1 Pin Configurations


    Original     		PDF F1G84 300mm/min NC7005-AS02 mark 641 bandpass filter 190 mhz 7261 Ink

    MURATA LQW18A

    Abstract: smd marking s22 s11 mark smd
    Text: NSVA528 Apr. 2013 NewJRC SAW FILTER NSVA528 Application Cordless telephone Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Input and Output Impedance Nominal Center Frequency (f0)


    Original     		PDF NSVA528 NSVA528 927MHz 1500MHz 903MHz 1500MHz 903MHz 927MHz MURATA LQW18A smd marking s22 s11 mark smd

    DEA162450BT-1210A2

    Abstract: DEA202450BT-1195A1 DEA202450BT-1213B1 DEA252400BT-2027A1 DEA252450BT-2024C1 DEA252450BT-2030A1 DEA252450BT-2031A1 DEA252450BT-2037C1 DEA312450BT-2010A1 DEA322448BT-2009
    Text: TDK RF Products for Wireless LAN 3/5/2004 for 2.4GHz Multilayer Band Pass Filter Start Freq. Stop Freq. Ins. Loss MHz MHz dB MAX 2400 2497 2.0 2400 2500 2.3 2400 2500 1.2 2300 2500 1.4 2400 2500 1.5 2400 2500 2.1 2400 2500 3.0 2400 2500 1.5 2400 2500 2.3


    Original     		PDF CF61A4601 S0400 1950MHz DEA162450BT-1210A2 DEA202450BT-1195A1 DEA202450BT-1213B1 DEA252400BT-2027A1 DEA252450BT-2024C1 DEA252450BT-2030A1 DEA252450BT-2031A1 DEA252450BT-2037C1 DEA312450BT-2010A1 DEA322448BT-2009

    DEA252450BT-2024C1

    Abstract: DEA252450BT-2030A1 DEA252400BT-2027A1 2525-size DEA252400BT-2030A1 DEA252450BT-2031A1 DEA312450BT-2010A1 DEA322448BT-2009 DEA162450BT-1210A2 DEA202450BT-1195A1
    Text: TDK RF Products for Wireless LAN 6/5/2003 for 2.4GHz Multilayer Band Pass Filter Start Freq. Stop Freq. Ins. Loss MHz MHz dB MAX 2400 2497 2.0 2400 2500 2.3 2400 2500 1.2 2300 2500 1.4 2400 2500 1.5 2400 2500 2.1 2400 2500 2.3 2400 2500 3.0 MHz 1990 1250


    Original     		PDF CF61A4601 S0400 1950MHz DEA252450BT-2024C1 DEA252450BT-2030A1 DEA252400BT-2027A1 2525-size DEA252400BT-2030A1 DEA252450BT-2031A1 DEA312450BT-2010A1 DEA322448BT-2009 DEA162450BT-1210A2 DEA202450BT-1195A1

    MGF0914A

    Abstract: fet 4901 0648
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES


    Original     		PDF MGF0914A MGF0914A 26dBm 800mA 50ohm fet 4901 0648

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES


    Original     		PDF MGF0913A MGF0913A 31dBm 18dBm 200mA Unit39 50ohm

    DEA205425BT-2028A4

    Abstract: smd marking S21 CF61A4401 CF61A4501 CF61A4901 DEA165487BT-1202 DEA205425BT-1209B2 DEA205437BT-1200 DEA205462BT-2023 DEA205462BT-2025A1
    Text: TDK Products for Wireless LAN 2003/6/5 for 5GHz Wide Band Mutilayer Band Pass Filter Start Freq. Stop Freq. Ins. Loss MHz MHz dB (MAX) 5150 5900 2.2 5150 5900 1.5 4900 5950 1.5 5100 5825 1.9 5150 5875 2.0 4900 5950 2.0 MHz 3450 3450 3450 1795 4120 1795 dB


    Original     		PDF DEA165487BT-1202 S0356 5425MHz 5625MHz 5975MHz 6175MHz DEA205425BT-2028A4 smd marking S21 CF61A4401 CF61A4501 CF61A4901 DEA165487BT-1202 DEA205425BT-1209B2 DEA205437BT-1200 DEA205462BT-2023 DEA205462BT-2025A1

    marking SA "SAW filter"

    Abstract: LQW18ANR10G00D NSVS1094 TZY2Z2R5A001B00 s11 mark smd
    Text: NSVS1094 Mar-04 JRC SAW FILTER UNDER DEVELOPMENT NSVS1094 Application 248.45MHz PHS Base-station Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Nominal Center Frequency (f0)


    Original     		PDF NSVS1094 Mar-04 NSVS1094 45MHz 100kHz 600kHz 45MHz 130kHz marking SA "SAW filter" LQW18ANR10G00D TZY2Z2R5A001B00 s11 mark smd

    s11 mark smd

    Abstract: smd manufacture S7 marking SA "SAW Filter" LQW18ANR10G00D IT 243 NSVS1097 marking S22
    Text: NSVS1097 Mar-04 JRC SAW FILTER UNDER NSVS1097 DEVELOPMENT Application 243.95MHz PHS Base-Station Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Nominal Center Frequency (f0)


    Original     		PDF NSVS1097 Mar-04 NSVS1097 95MHz 100kHz 600kHz 95MHz 130kHz s11 mark smd smd manufacture S7 marking SA "SAW Filter" LQW18ANR10G00D IT 243 marking S22

    2028b

    Abstract: 3POLE DEA205425BT-2028B1 CF61A4401 CF61A4501 CF61A4901 DEA165487BT-1202 DEA205425BT-1209 DEA205437BT-1200 DEA205462BT-2023
    Text: TDK Products for Wireless LAN 2/7/2002 for 5GHz Wide Band Mutilayer Band Pass Filter Start Freq. Stop Freq. Ins. Loss MHz MHz dB (MAX) 5150 5900 1.5 4900 5950 1.5 5100 5825 1.9 5150 5875 2.0 4900 5950 2.0 5100 5825 2.2 MHz 3450 3450 3500 3450 3450 3450 dB


    Original     		PDF DEA205437BT-1200 DEA205425BT-1209 DEA205462BT-2023 DEA205462BT-2025 DEA205425BT-2028B1 DEA165487BT-1202 S0356 5425MHz 5625MHz 2028b 3POLE DEA205425BT-2028B1 CF61A4401 CF61A4501 CF61A4901 DEA165487BT-1202 DEA205425BT-1209 DEA205437BT-1200 DEA205462BT-2023

    MGF0919A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm


    Original     		PDF MGF0919A MGF0919A 30dBm 12dBm 300mA 50pcs)

    SCL 1058

    Abstract: GP145 IDS800 MGF0915A fet GP145 3268
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original     		PDF MGF0915A MGF0915A 23dBm 50pcs) SCL 1058 GP145 IDS800 fet GP145 3268

    MGF0915A

    Abstract: SCL 1058
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original     		PDF MGF0915A MGF0915A 23dBm 50pcs) SCL 1058

    SMD GP 113

    Abstract: MGF0921A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) SMD GP 113

    MGF0917A

    Abstract: gp 801 pt 11400
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


    Original     		PDF MGF0917A MGF0917A 24dBm 50pcs) gp 801 pt 11400

    mitsubishi 7805

    Abstract: 7805 pi MGF0918A 7805 smd
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm


    Original     		PDF MGF0918A MGF0918A 27dBm 150mA 50pcs) d-162 mitsubishi 7805 7805 pi 7805 smd

    FET K 1358

    Abstract: MGF0916A gp 752 9452 smd
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		PDF MGF0916A MGF0916A 23dBm 100mA 50pcs) FET K 1358 gp 752 9452 smd

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original     		PDF MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs)

    BL2012

    Abstract: ACX Multilayer Chip BL2012-10B3301 ACX balun multilayer GHz
    Text: ACX Advanced Ceramic X BL 2012 Series Multilayer Chip Baluns Features ™ Monolithic SMD with small, low-profile and light-weight type. Applications ™0.8 ~ 6 GHz wireless communication systems, including DECT/PACS/PHS/GSM/DCS phones, WLAN card, Bluetooth modules, Hyper-LAN,


    Original     		PDF BL201210B3301_ BL2012 ACX Multilayer Chip BL2012-10B3301 ACX balun multilayer GHz

    diode gp 429

    Abstract: MGF0921A 9014 SMD gp 429 pin smd diode ID 80 C 1541
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA diode gp 429 9014 SMD gp 429 pin smd diode ID 80 C 1541

    MGF0913A

    Abstract: 1709-1
    Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES


    OCR Scan     		PDF MGF0913A MGF0913A 31dBm 18dBm 200mA 1709-1