C67078-S1311-A2
Abstract: No abstract text available
Text: BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 42 500 V 4A 2Ω TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1311-A2
C67078-S1311-A2
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C67078-S1311-A2
Abstract: No abstract text available
Text: BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 42 500 V 4A 2Ω TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current
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Original
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O-220
C67078-S1311-A2
C67078-S1311-A2
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Untitled
Abstract: No abstract text available
Text: SiR664DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) 0.0060 at VGS = 10 V 60a 0.0075 at VGS = 6 V 60a 0.0095 at VGS = 4.5 V 54 60 Qg (Typ.) 12 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Primary Side Switching
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SiR664DP
SiR664DP-T1-GEelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiS427EDN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d, g 0.0106 at VGS = - 10 V - 50d 0.0160 at VGS = - 6 V - 42.1 0.0213 at VGS = - 4.5 V - 31.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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SiS427EDN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiB488DK www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiB488DK
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS426DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiS426DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7619DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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Si7619DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SiB422
Abstract: No abstract text available
Text: SPICE Device Model SiB422EDK www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiB422EDK
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SiB422
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR698DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR698DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS434DN www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiS434DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7405BDN www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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Si7405BDN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ848EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0075 RDS(on) () at VGS = 4.5 V 0.0120 ID (A) • AEC-Q101 Qualified • 100 % Rg and UIS Tested
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Original
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SQJ848EP
AEC-Q101
SQJ848EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7149ADP Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0052 at VGS = - 10 V - 50d 0.0095 at VGS = - 4.5 V - 50d • • • • Qg (Typ.) 43.1 nC • Material categorization: For definitions of compliance
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Si7149ADP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2323DDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.039 at VGS = - 4.5 V - 5.3 0.050 at VGS = - 2.5 V - 4.7 0.075 at VGS = - 1.8 V - 3.8 d Qg (Typ.) 13.6 nC APPLICATIONS TO-236 (SOT-23) G
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Si2323DDS
O-236
OT-23)
Si2323DDS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SiA931DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.065 at VGS = - 10 V - 4.5a 0.080 at VGS = - 6 V - 4.5a 0.100 at VGS = - 4.5 V - 4.5 Qg (Typ.) 4.1 nC a PowerPAK SC-70-6 Dual 1 S1 APPLICATIONS
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SiA931DJ
SC-70-6
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQS850EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified 60 RDS(on) () at VGS = 10 V 0.0215 RDS(on) () at VGS = 4.5 V 0.0261 ID (A) • 100 % Rg and UIS Tested
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Original
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SQS850EN
AEC-Q101
SQS850EN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR424DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR424DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS438DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiS438DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQ4410EY www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SQ4410EY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR426DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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Original
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SiR426DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 42 Vos 500 V fa 4A ^%>S oti 2CÌ Package Ordering Code TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit
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OCR Scan
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O-220
C67078-S1311-A2
D5155
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PDF
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DS2413
Abstract: No abstract text available
Text: DS1310 PRELIMINARY DALLAS D S 1310/D S1311 Sup er Socket s e m ic o n d u c t o r PACKAGE OUTUNE FEATURES: • Built-in C M O S circuitry adds nonvolatile SR A M and real time dock to existing microcontroller-based de □ □ □ a n u □ □ □ n u □
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OCR Scan
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DS1310
1310/D
S1311
40-pin
DS2413
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ffDS on Package Ordering Code BUZ 42 500 V 4A 2 Li TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit
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OCR Scan
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O-220
C67078-S1311-A2
fl235bG5
8E35bOS
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s-1311
Abstract: No abstract text available
Text: C Integrated DeviceTechnology, Inc IDT 7M656L 256K CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • H ig h -d e n sity 2 5 6 K -b it C M O S s ta tic RAM m o du le • C u sto m e r-co n fig u re d to 16Kx16, 32K x8 o r 64Kx4 • Fast a cce ss tim e s T h e ID T7M 656 Is a 256 K -b it h ig h -s p e e d C M O S sta tic RAM c o n
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OCR Scan
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7M656L
16Kx16,
64Kx4
IDT6167S
IDT7M656L
MIL-STD-883
7M656
S13-16
s-1311
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