Untitled
Abstract: No abstract text available
Text: PI5V330S Low On-Resistance Wideband/Video Quad 2-Channel Mux/DeMux Features Description • • • • • • • • • High-performance solution to switch between video sources Wide bandwidth: 570 MHz typical Low On-Resistance: 5Ω (typical) Low crosstalk at 10 MHz: –80dB
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PI5V330S
16-pin
150-mil
PI5V330S
PI5V330SWE
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Untitled
Abstract: No abstract text available
Text: 0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX ADG836L FEATURES FUNCTIONAL BLOCK DIAGRAM 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C Guaranteed leakage specifications up to 125°C
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ADG836L
RM-10)
ADG836LYRM
ADG836LYRM-REEL
ADG836LYRM-REEL7
RM-10
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Untitled
Abstract: No abstract text available
Text: 0.5 Ω CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX ADG836 FEATURES ADG836 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C High current carrying capability: 300 mA continuous
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ADG836
ADG836
RM-10
CP-12-1
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S1A 57
Abstract: No abstract text available
Text: Preliminary Technical Data FEATURES +1.8 V to +5.5 V operation Ultra-Low On resistance: 0.5 Ω typical 0.8 Ω max at 5V supply Excellent audio performance, ultralow Distortion: 0.01 Ω typical 0.2 Ω max Ron flatness High current carrying capability: 400 mA continuous
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ADG888
CP-16)
ADG888YRU
ADG888YCP
ADG888YCB
RU-16
CP-16
CB-16
S1A 57
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ADG836L
Abstract: ADG836LYRM ADG836LYRM-REEL ADG836LYRM-REEL7 MO-187BA RM-10
Text: 0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX ADG836L FEATURES FUNCTIONAL BLOCK DIAGRAM 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C Guaranteed leakage specifications up to 125°C
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ADG836L
RM-10)
ADG836LYRM
ADG836LYRM-REEL
ADG836LYRM-REEL7
RM-10
ADG836L
ADG836LYRM
ADG836LYRM-REEL
ADG836LYRM-REEL7
MO-187BA
RM-10
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ADG836
Abstract: ADG836YRM ADG836YRM-REEL ADG836YRM-REEL7 MO-187-BA RM-10 ADG836YRMZ
Text: 0.5 Ω CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX ADG836 FEATURES ADG836 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C High current carrying capability: 300 mA continuous
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ADG836
ADG836
RM-10
CP-12-1
ADG836YRM
ADG836YRM-REEL
ADG836YRM-REEL7
MO-187-BA
RM-10
ADG836YRMZ
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LT1060
Abstract: LT-1060 4th-order active bandpass filter 400KHz tlc106 MOO14 TLC1060 LTC1060AMJ LTC1060 LTC1060ACN LTC1060CN
Text: LTC1060 Universal Dual Filter Building Block U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Guaranteed Filter Specification for ±2.37V and ±5V Supply Operates Up to 30kHz Low Power and 88dB Dynamic Range at ±2.5V Supply Center Frequency Q Product Up to 1.6MHz
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LTC1060
30kHz
LTC1060A
1060fb
LT1060
LT-1060
4th-order active bandpass filter 400KHz
tlc106
MOO14
TLC1060
LTC1060AMJ
LTC1060
LTC1060ACN
LTC1060CN
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MOO14
Abstract: No abstract text available
Text: LTC1060 Universal Dual Filter Building Block FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Guaranteed Filter Specification for ±2.37V and ±5V Supply Operates Up to 30kHz Low Power and 88dB Dynamic Range at ±2.5V Supply Center Frequency Q Product Up to 1.6MHz
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LTC1060
30kHz
LTC1060A
1060fb
MOO14
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DG636EN-T1-E4
Abstract: DG636E TSSOP14 DG636
Text: New Product DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully
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DG636
DG636
18-Jul-08
DG636EN-T1-E4
DG636E
TSSOP14
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117pF
Abstract: DG636E DG636
Text: New Product DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully
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DG636
DG636
08-Apr-05
117pF
DG636E
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DG636
Abstract: TSSOP14
Text: DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully
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DG636
DG636
11-Mar-11
TSSOP14
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SR704U
Abstract: VDMOS S1A 57
Text: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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SR704U
SR704U
VDMOS
S1A 57
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ADG836
Abstract: ADG836YCP ADG836YCP-REEL ADG836YCP-REEL7 ADG836YRM ADG836YRM-REEL ADG836YRM-REEL7 RM-10
Text: 0.5 CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX ADG836 FEATURES 0.5 Typical On Resistance 0.8 Maximum On Resistance at 125°C 1.65 V to 3.6 V Operation Automotive Temperature Range: –40°C to +125°C High Current Carrying Capability: 300 mA Continuous
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ADG836
ADG836
MO-187BA
12-Lead
CP-12)
MO-220-VEED-1
ADG836YCP
ADG836YCP-REEL
ADG836YCP-REEL7
ADG836YRM
ADG836YRM-REEL
ADG836YRM-REEL7
RM-10
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DG636E
Abstract: TSSOP14 DG636
Text: New Product DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully
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DG636
DG636
18-Jul-08
DG636E
TSSOP14
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DG636E
Abstract: DG636
Text: DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully
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DG636
DG636
18-Jul-08
DG636E
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DG9636
Abstract: S1A 57
Text: DG9636 Vishay Siliconix Dual SPDT Analog Switch DESCRIPTION FEATURES The DG9636 is a CMOS, dual SPDT analog switch designed to operate from + 2.7 V to + 12 V, single supply. All control logic inputs have a guaranteed 1.65 V logic HIGH threshold when operation from a + 12 V power supply. This makes the
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DG9636
DG9636
18-Jul-08
S1A 57
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SR704U
Abstract: No abstract text available
Text: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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SR704U
SR704U
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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SR704U
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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Original
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SR704U
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PDF
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DG636
Abstract: No abstract text available
Text: DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully
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DG636
DG636
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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DG636
Abstract: No abstract text available
Text: DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully
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DG636
DG636
11-Mar-11
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PDF
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DG636E
Abstract: DG636
Text: DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully
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DG636
DG636
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
DG636E
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Untitled
Abstract: No abstract text available
Text: ♦ • ♦ • ♦ • P • R • E • L • I • IVI • I • N ♦ A • R • Y ♦ • ♦ ♦ • • S1A THRU S1J SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 600 Volts CU R R EN T - 1.0 Am peres FEATURES ♦ ♦ ♦ ♦ ♦ For surface mounted applications
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-214A
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Untitled
Abstract: No abstract text available
Text: A\ INCH MM .156 .44 7 .487 .570 .614 .625 1.247 1.375 1.687 2.989 3.96 11.35 12.37 14.48 15.60 15.88 3Ü.67 34.93 42.85 75.92 DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC. AND SHALL NOT BE DISCLOSED, COPIED OR USED FOR PROCUREMENT ORMANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION.
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