Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BL-S21L8 Features: Package dimensions: 1. Chip material: GaP/GaP 2. Emitted color : Green 3.3 .130 3. Lens Appearance : Green Diffused 1.8(.071) 1.6(.063) 3.0(.118) 4. General purpose leads. 5. Low power consumption.

mn1400

Abstract: MN1202
Contextual Info: W D>S21LSI MN 1202 MN1202 C M O S f i 7 ^ 4 e*y h V C M O S D ual 4 -B it In put M u ltip le x e r ^ /D e s c r ip tio n Unit : mm £ •/ h X 2 A MN1202 l±, CMOS L S I T 't o 2 S S riM K ff-f A S E L 4 t t ! flc 2C o 3C y h 3 È ÿ l ] A ^ i f - f i 7 ) 1 ffi

BL-S21L8

Contextual Info: BRIGHT LED ELECTRONICS CORP. BL-S21L8 SINCE 1981 ● Features: ●Package dimensions: 1. Chip material: GaP/GaP 2. Emitted color : Green 3.3 .130 3. Lens Appearance : Green Diffused 1.8(.071) 1.6(.063) 4. General purpose leads. 3.0(.118) 5. Low power consumption.

telemetry block diagram

Abstract: HFA3600 HFA3600IB IS-54 schematic diagram UPS active power 600 LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HA3600 S11L
Contextual Info: HFA3600 NO RE U CT NT PROD E T E CEME L OBSO DED REPLA Data Sheet EN COMM August 2002 FN3655.5 Low-Noise Amplifier/Mixer Features The HFA3600 is a silicon Low-Noise Amplifier with high performance characteristics allowing the design of very sensitive, wide dynamic-range 900MHz receivers with

bt 2323

Abstract: TX-2G
Contextual Info: AWL9966 802.11a/b/g/n WLAN/Bluetooth FEIC PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • 3% Dynamic EVM @ POUT = +17 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 3% Dynamic EVM @ POUT = +20 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps • -30 dBc 1st Sidelobe / -50 dBc 2nd Sidelobe

dwdm

Abstract: 64 QAM Transmitter 16 QAM Transmitter 755U SMF28 CATV DISTRIBUTION NETWORK Optical transmitter video transmitter 2.4 GHz 57ch
Contextual Info: PRELIMINARY DATASHEET| JULY 31, 2008 Model 755U Optical Transmitter DWDM, up to 20 km, Low Distortion, Wideband Emcore’s Model 755U is a directly modulated DM DWDM optical transmitter specifically designed for wideband applications that require both CATV and DBS signals to be carried over up to 10km length of

Contextual Info: DATA SHEET SKY65206-13: WLAN 802.11b/g Intera Front-End Module GND GND ANT A GND GND ANT B 2.4–2.5 GHz operation Advanced InGaP HBT process ● 27 dB small signal gain ● 802.11g linear power at 3.0% EVM: 16 dBm ● 802.11b mask compliant power: 20 dBm

44 LS 95

Abstract: tx-1g SKY65225-11 SKY65227-11
Contextual Info: DATA SHEET SKY65227-11: WLAN 802.11n Single Band 2.4 GHz MIMO Intera Front-End Module Features ● ● ● ● ● ● ● ● ● ● ● ● Description Two full 2.4 GHz transmit/receive chains PCIe, miniPCI, Cardbus and Access Point applications Backward-compatible with 802.11b/g standards

BGA735N16

Contextual Info: BGA735N16 High Linearity Tri-Band UMTS LNA 2100, 1900/1800/2100, 800/900MHz Data Sheet Revision 3.5, 2009-11-24 Final RF & Protection Devices Edition 2009-11-24 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

Contextual Info: BGA771N16 High Linearity Dual-Band UMTS LNA 1900/1800/2100, 800/900MHz Data Sheet Revision 3.1, 2010-03-16 Final RF & Protection Devices Edition 2010-03-16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

44 LS 95

Abstract: RX Antenna Diversity for 802.11n OFDM542 SKY65230-11 lS21l
Contextual Info: DATA SHEET SKY65230-11: WLAN 802.11n 2 x 2 MIMO Intera Front-End Module with 3 Antenna Ports Features ● ● ● ● ● ● ● ● ● ● ● Description 2 x 2 MIMO architecture Two full dual-band transmit/receive chains 3rd antenna provides switch diversity on both chains

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

TGS 880

Abstract: INFINEON PART MARKING BGA751L7 S12L
Contextual Info: D a t a S h e e t , V 3. 0 , S e p t e m b e r 2 00 8 B G A 7 51 L7 S i n gl e - B a n d U M T S L N A 800 MHz S m a l l S i g n a l D i s c r et e s Edition 2008-09-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.

BGA736

Abstract: HSDPA BGA736L16 KC639 T1540 T0712
Contextual Info: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: D a t a S he et , V 3. 0, A ug us t 2 00 8 B G A 7 35 L1 6 H i g h L i n ea r i t y T r i - B an d U M T S L N A 2 1 00 , 1 9 0 0/ 1 8 0 0 /2 1 0 0 , 80 0 / 9 0 0 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-08-26 Published by Infineon Technologies AG

Transistor C G 774 6-1

Abstract: C G 774 6-1 1041T060
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low

Contextual Info: DATA SHEET SKY65111-348LF: ISM 600–1100 MHz Band 2 Watt InGaP HBT Power Amplifier Features Block Diagram Optimized for 800–1100 MHz operation ● Output power greater than 33 dBm @915 MHz ● 3.5 V nominal operating voltage ● Integrated analog power control voltage, V

tx-1g

Abstract: RX1g 21 TX1G SKY65225-11 SKY65227-11 SKY65
Contextual Info: DATA SHEET SKY65227-11: WLAN 802.11n Single Band 2.4 GHz MIMO Intera Front-End Module Features ● ● ● ● ● ● ● ● ● ● ● ● Description Two full 2.4 GHz transmit/receive chains PCIe, miniPCI, Cardbus and Access Point applications Backward-compatible with 802.11b/g standards

RX Antenna Diversity for 802.11n

Abstract: OFDM542 SKY65230-11
Contextual Info: DATA SHEET SKY65230-11: WLAN 802.11n 2 x 2 MIMO Intera Front-End Module with 3 Antenna Ports Features ● ● ● ● ● ● ● ● ● ● ● Description 2 x 2 MIMO architecture Two full dual-band transmit/receive chains 3rd antenna provides switch diversity on both chains

lS21l

Abstract: SKY65206 SKY65206-13 CS-1130
Contextual Info: DATA SHEET SKY65206-13: WLAN 802.11b/g Intera Front-End Module GND GND ANT A GND GND ANT B 2.4–2.5 GHz operation Advanced InGaP HBT process ● 27 dB small signal gain ● 802.11g linear power at 3.0% EVM: 16 dBm ● 802.11b mask compliant power: 20 dBm

tx-1a

Abstract: PU1A SKY65225-11 SKY65228-11 RX-1a rx1a 4985
Contextual Info: DATA SHEET SKY65228-11: WLAN 802.11n Single Band 4.9–5.85 GHz MIMO Intera Front-End Module Features ● ● ● ● ● ● ● ● ● ● ● ● ● Description Single band 4.9–5.85 GHz MIMO architecture Two full 4.9–5.85 GHz transmit/receive chains

smd resistor 0402 footprint dimension

Abstract: BGA713L7 TGS 821 C166 T1533 713L LNA marking R0
Contextual Info: BGA713L7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

TGS 2620

Abstract: UMTS transistor TGS 2600
Contextual Info: Data Sheet, V3.0, July 2009 BGA777L7 S i ng l e - B an d U M T S L N A 2300 - 2700 MHz RF & Protection Devices Edition 2009-07-02 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer