amn79

Contextual Info: <#» inova microelectronics S256K16 1 A dvance Inform ation inova 256K x 16 Static RAM Device Types Key Parameters S256K16 and S256K16L Access Time Cycle Time Output Enable Access 55 iC 55CC 55 55 20 70MC 70CC 70CC 85MC 85IC 85CC 100MC 100IC 100CC 85 85 30

GE-504A

Abstract: ge504a
Contextual Info: m M/HITE /M IC R O E L E C T R O N IC S 256Kx64 SRAM MODULE W S256K64-XG4W X ADVANCED* FEATURES • A c c e s s Tim es 20, 2 5 , 3 5 n s ■ Com m ercial, Industrial and M ilita ry Tem perature R ange ■ M IL -S T D -8 8 3 C om pliant D e vic e s A va ilab le

256KX8 SRAM 25nS

Abstract: S256K8-XCX
Contextual Info: TT W S256K8-XCX WHITE /M IC R O E L E C T R O N IC S 256Kx8 SRAM MODULE FEATURES FIG. 1 • Access Tim es 20, 25, 35, 45nS PIN CONFIGURATION TOP VIEW NC [I 1 W ■ Standard M ic ro c irc u it D raw ing, 5962-93157 ■ MIL-STD-883 C om pliant Devices A va ila ble

IAW112

Contextual Info: S256K4 inova microelectronics 256K x 4 Static RAM Device Types Key Parameters S256K4 and S256K4L Access Time Cycle Time Output Enable Access 25C 35M 351 35C 45M 451 45C Unit 25 25 10 35 35 15 45 45 20 nS nS nS Features • 300 mil wide 28 pin DIP • Advanced 4-T CMOS technology

Contextual Info: M/HITE /M ICRO ELECTRO NICS W S256K8-XCX 256Kx8 SRAM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NC C 1 ^ 32 3 Vcc A16 C 2 A14C 3 31 ü A15 30 Ü A 1 7 A12 C 4 A7 E 5 29 C6 A5 C 7 A4 C 8 A3 C 9 A6 A 2 C 10 11 A1 A O C 12 C i/ooC 28 27 26 3 WE HA13 3 A8

Contextual Info: a W S256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess T im e s 17, 20, 25, 35ns D ata I/O C o m p a tib le w ith 3.3 V devices ■ M IL-S T D -883 C o m p lia n t D evices A v a ila b le 2V M in im u m D ata R ete n tio n fo r b a tte ry back up o p e ra tio n

Contextual Info: a W S256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns ■ 2V M in im u m Data R etention fo r b a tte ry back up operation ■ M IL-S TD -883 C o m p lia n t Devices A v a ila b le ■ C om m ercial, Industrial and M i lita r y T e m p e ra tu re Range

Contextual Info: S256K32-XXX H/HITE M I C R O E L E C T R O N I C S 256Kx32 SRAM MODULE PRELIMINARY* FEATURES Access Tim es 20, 25, 35ns • ■ M IL-S TD -883 C om p lian t Devices A v a ila b le ■ C om m ercial, Ind u stria l and M ilita ry T e m pe ratu re Range ■

Contextual Info: NN514256 seríes Fast Page Mode CMOS 256Kx4bit Dynamic RAM NPN a DESCRIPTION The NN514256 series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 4 bits. The NN514256 series is fabricated with advanced CMOS technology and designed with innovative design tech­

Contextual Info: 52E D • ELPAQ TOOaaöQ 0000004 T14 ■ ELPö ELPAca j_ /i/ S256K8A A division of E L M O Semiconductor Corp. 2 0 ~^5ns_ 2Mb CMOS STATIC SRAM FEATURES ■ High density SRAM module • Organized as 262,144 x 8 ■ Access time 20 - 35ns ■ Low power consumption

Contextual Info: a S256K32-XXX WHITE /MICROELECTRONICS 256Kx32SRAM MODULE PRELIMINARY* FEATURES • A ccess Tim es 20, 25, 35ns ■ 2V D ata R etention devices a va ila b le ■ M IL-S TD -883 C om pliant Devices A v a ila b le ■ C om m ercial, Ind ustria l and M ilita r y Tem pe ratu re Range

Contextual Info: a S256K64-XG4WX WHITE /MICROELECTRONICS 256Kx64SRAM MODULE ADVANCED* FEATURES • A ccess Tim es 20, 25, 35ns C om m ercial, Ind ustria l and M ilita r y T e m pe ratu re Range ■ M IL-S TD -883 C om pliant Devices A v a ila b le 5 V olt Power Supply ■

NMB Technologies

Abstract: 1M204-07 CMOS256K 1M204 1M204-10 LWL1R
Contextual Info: MËÊBmÊÊÊmmm m MiïÊmmÊmÊÊÊmÊËÈÊÊmmm. NMB Sem iconductor AAA1M204 Fast Page Mode S256K x 4 Dynamic RAM [p iB iS iU M n r a K ii PIN CONFIGURATIONS FEATURES 20 i/o , C • 2 6 2,14 4 x 4 bit Organization ■ Single 5V ± 1 0 % Power Supply

Contextual Info: a S256K32-XXX WHITE /M ICROELECTRONICS 256Kx32 SRAM MODULE PRELIMINARY* FEATURES • A cce ss Tim es 20, 25, 35nS ■ 2V Data R etention devices a vailable ■ M IL-S TD -883 C o m p lia n t Devices A v a ila b le ■ C om m ercial, Industrial and M i lita r y T e m p e ra tu re Range

MARCONI 2851

Abstract: T1AL250V marconi 2851S HDB3 to nrz converter using fpga PLC based fire alarm system 2853S automatic phase changer eurocom d/1 HDB3 CODING DECODING FPGA ISO calibration certificate formats
Contextual Info: DIGITAL COMMUNICATIONS ANALYZERS 2850B & 2850BS 2851 & 2851S 2852 & 2852S 2853 & 2853S 2854S & 2855S Operating Manual Document part no. 46892/218 Issue 34 8 December 2004 DIGITAL COMMUNICATIONS ANALYZERS 2850B & 2850BS 2851 & 2851S 2852 & 2852S 2853 & 2853S

Contextual Info: ca S256K64-XG4WX M/HITE M IC R O ELE C TR O N IC S 256Kx64 SRAM MODULE ADVANCED* FEATURES • Access Tim es 20, 25, 35nS ■ C om m ercial, In d u stria l and M ilita ry T e m pe ratu re Range ■ M IL-S TD -883 C om p lian t D evices A v a ila b le ■ 5 V o lt P ow er Supply

m38802m2

Abstract: m7101 ST22U35VDM M38802 KHS04 mp4 M7101 M71XX cyrix DX2 YMF715 PCI1131
Contextual Info: A p p e n d i x D Schematics This appendix shows the schematic diagrams of the notebook. Digitally signed by fdsf DN: cn=fdsf, o=fsdfsd, ou=ffsdf, email=fdfsd@fsdf f, c=US Date: 2010.02.16 07:40:15 +07'00' www.kythuatvitinh.com 3.3V 2.9V 3.3V 2 2,5 $CPUA[3.31]

Contextual Info: a S256K64-XG4WX WHITE /MICROELECTRONICS 256Kx64SRAM MODULE A D V A N C E * FEATURES • Access Ti mes 20,25, 35ns Commercial, Industrial and M ilitary Temperature Range ■ M IL-STD-883 Compliant Devices Available 5 Volt Power Supply ■ Packaging: Low Power CM OS

WS256K32-XXX

Contextual Info: a S256K32-XXX IVHITE /M IC R O E L E C T R O N IC S 256Kx32 SRAM MODULE p r e lim in a r y * FEATURES • Access Times 20, 25, 35nS ■ 2V Data Retention devices available ■ MIL-STD-883 Compliant Devices Available ■ Commercial, Industrial and Military Temperature Range

Contextual Info: a W S256K4-XDSX WHITE /MICROELECTRONICS 256Kx4SRAM MONOLITHIC FEATURES PIN CONFIGURATION TOP VIEW AO C 1 28 H V cc A1 E 2 A2C 3 27 □ A17 A3 E 4 25 □ A15 A4 E 5 24 □ A14 A5 E 6 23 H A13 A6 E 7 22 □ A12 A7 E 8 21 □ A11 A8 E 9 20 H NC A9 E 10 19 □ 1/03

Contextual Info: S256K16-XXX Hi-REUÄBiUTY PRODUCT 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • Access Tim es 17, 20, 25, 35ns 2V M inim um Data Retention for battery back up operation ■ M IL-STD-883 C om pliant Devices A vailable C om m ercial, Industrial and M ilitary Tem perature Range

Contextual Info: NN51V4260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM NPN a DESCRIPTION The N N 51V4260A series is a high perform ance C M O S D ynam ic Random Access M em ory organized as 262,144 words by 16 bits. The N N 51V4260A series is fabricated with advanced C M OS technology and designed with innovative design

Contextual Info: a S256K64-XG4W X WHITE /M ICROELECTRONICS 256Kx64 SRAM MODULE ADVANCED* FEATURES • A cce ss Tim es 20, 25, 35nS ■ C om m ercial, Industrial and M i lita r y Te m p e ra tu re Range ■ M IL-STD -883 C o m p lia n t Devices A v a ila b le ■ 5 V o lt Power Supply