Untitled
Abstract: No abstract text available
Text: 1 0 4 8 ,5 7 6 W O R D x PRELIMINARY 4 BIT D Y N A M IC R A M DESCRIPTION The TC514402AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
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TC514402AP/AJ/ASJ/AZ
300/350m
5514402AP/AJ/ASJ/AZ-80
TC514402AP/AJ/ASJ/AZâ
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Untitled
Abstract: No abstract text available
Text: May 1990 FUjlTSU IPRODUCT PROFILE: MB85230 -80L/-10L/-12L CMOS 1M X 8 LOW POWER DRAM MODULE The Fujitsu MB85230 is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB81C1000 devices. The MB85230 is optimized for those applications requiring high speed, high performance and
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MB85230
-80L/-10L/-12L
MB81C1000
MB85230
30-pad
MB85230-80L)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 1,048,576 W ORD x 4 BIT DYN AM IC RAM DESCRIPTION T he T C 514410A P /A J/A SJ/A Z is the n e w g en e ra tio n dyn am ic R A M organized 1 ,0 4 8 ,5 7 6 words by 4 bits. T he T C 514410A P /A J/A SJ/A Z u tiliz es T O S H IB A ’S CM OS S ilico n gate process tech n ology as w e ll as
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14410A
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AZL-70
Abstract: No abstract text available
Text: PRELIMINARY 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the
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TC514400APL/AJL/ASJL/AZL
300/350mil)
tolTC514400APL/AJL/ASJIVAZL.
a512K
TC514400APL/AJ
L/AZL-70,
L/AZL-80
AZL-70
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33D10
Abstract: A4t 3m 3 pin DDD22 S2042B-05 1010 OEI YAT-6
Text: PRELIMINARY DEVICE SPECIFICATION >9MCC HIGH PERFORMANCE SERIAL INTERFACE CIRCUITS FEATURES • Functionally compliant with ANSI X3T11 Fibre Channel physical and transmission protocol standards • S2042 transmitter incorporates phase-locked loop PLL providing clock synthesis from lowspeed reference
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S2042/S2043
X3T11
S2042
S2043
20-bit
S2042/S2043
S2042B-05
33D10
A4t 3m 3 pin
DDD22
1010 OEI
YAT-6
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m62x42
Abstract: OKI M62X42B M62X42B 400P Crystal STDP MSM62X42BX
Text: O K I Sem iconductor MSM62X42B REAL TIM E CLOCK 1C W ITH B U ILT-IN CRYSTAL DESCRIPTION The MSM62X42B is a bus-connection Micro* com puter peripheral IC of a Real Tim e Clock w ith built-in crystal in the p erpetual calendar w hich can be read and w ritten from a second
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MSM62X42B
MSM62X42B
m62x42
OKI M62X42B
M62X42B
400P Crystal
STDP
MSM62X42BX
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UTP HA3
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 1 8 1 2 5 A J - 5 , - 6 , - 7 , - 5 S , - 6 S , - 7 S HYPER PAGE MODE 1048576-BIT 131072-WQRP BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 131072-word by 8-bit dynamic RAMs, fabricated with a high performance CMOS process, and is ideal for largecapacity memory systems where high speed, low power
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1048576-BIT
131072-WQRP
131072-word
12/8m
UTP HA3
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M5M41166
Abstract: M5M4116 M5M411664
Text: MITSUBISHI LSIs M 5 M 4 1 1 6 6 4 A J .T P 1 - 5 ,- 6 ,- 7 ,-5 S ,- 6 S ,- 7 S _FAST PAGE MODE 1048576-BIT 65536-W ORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 65536-word by 16-bit dynamic RAMs, fabricated with a high performance CMOS process, and is ideal for
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1048576-BIT
5536-W
16-BIT)
65536-word
16-bit
M5M41166
M5M4116
M5M411664
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U716
Abstract: U6915 1178Q
Text: H Enhanced DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Suterns I x . Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns Axessto Any New Page
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DM2M36SJ
DM2M32SJ
2Mbx36/2Mbx32
U716
U6915
1178Q
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Untitled
Abstract: No abstract text available
Text: Communication iCs SCSI Active Terminator BH9595FP-Y/BH9596FP-Y These S C SI active terminators, developed a s a substitute for conventional discrete terminators, m aintain g o o d co n siste n cy between V M level 2.85V and G N D level (OV) and between V M level and V dd level, and have extrem ely low
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BH9595FP-Y/BH9596FP-Y
90X50X
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NE5512
Abstract: S 8742 LM334 NE5037 NE5037N
Text: Product specification Philips Semiconductors Linear Products NE5037 6-Bit A/D converter parallel outputs PIN CONFIGURATION DESCRIPTION The NE5037 is a low cost, complete successive-approxlmadon analog-to-digital (A/D) converter, fabricated using Bipolar/lzL
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NE5037
NE5037
NE5037will
300ns
711002b
NE5512
S 8742
LM334
NE5037N
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IC558
Abstract: No abstract text available
Text: 8 ,1 9 2 W O R D x 9 B IT C M O S S T A T IC R A M D E S C R IP T IO N The TC5589P/J is a 73,728 bits high speed static random access memory organized as 8,192 words by 9 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology
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TC5589P/J
TC5589P/J--15,
TC5589P/J--20
TC5589P/J--25,
TC5589P/J-35
--300B)
IC558
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24LC02A
Abstract: 24AA02
Text: 24AA01/02 & Microchip 1.8 Volt IK and 2K CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • Single supply with operation down to 1.8 V • Low power CMOS technology — 1 mA active current typical — 10 nA standby current typical at 5.5 V — 3 HA standby current typical at 1.8 V
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24AA01/02
24AA01
24AA02
MCHPD001
24AA01
24LC02A
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Untitled
Abstract: No abstract text available
Text: R C H I I - P S E M IC O N D U C T O R -n FST3125 Quad Bus Switch General Description Features The Fairchild Switch FST3125 provides lo u r high-speed C M OS TT L-com patible bus sw itches. The low on resistance ot the switch allows inputs to be connected to outputs w ith
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FST3125
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Untitled
Abstract: No abstract text available
Text: PIC16C5X M ic r o c h ip EPROM/ROM-Based 8-Bit CMOS Microcontroller Series Devices Included in this Data Sheet: • 12-bit w ide instructions • PIC16C52 • 8-bit w ide data path • PIC16C54S • Seven o r eight special function hardware registers • PIC16CR54S
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PIC16C5X
12-bit
PIC16C52
PIC16C54S
PIC16CR54S
PIC16C55S
PIC16C56S
PIC16CR56S
PIC16C57S
PIC16CR57S
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Untitled
Abstract: No abstract text available
Text: KM93C46V CMOS EEPROM 1K Bit Serial Electrically Erasable PR O M FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM93C46V : Commercial — KM93C46VI: Industrial • Single 3 volt Supply • High performance Advanced CMOS Technology — Reliable floating gate technology
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KM93C46V
KM93C46VI:
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8117400
Abstract: No abstract text available
Text: Fujfrsu November 1993 Edition 2.0 DATA SHEET MB85390 / 85391-60/-70/-80 CMOS 4 M x 32 Fast Page Mode DRAM Module CMOS 4,194,304 x 32 Bit Fast Page Mode DRAM Module The Fujitsu MB85390 and MB85391 are fully decoded, CMOS dynamic random access memory DRAM modules consisting of eight MB8117400 devices. The
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MB85390
MB85391
MB8117400
MB85390and
8117400
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Untitled
Abstract: No abstract text available
Text: Enhanced Memory Systems Inc. DM512K32SmM512K36STBMultibankEDO 512Kbx 32/512Kbx 36 EDRAM SIMM Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four Actives Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page
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DM512K32SmM512K36STBMultibankEDO
512Kbx
32/512Kbx
DM512K36ST6
512Kx
44-pin
DM2213
DM512K32
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Untitled
Abstract: No abstract text available
Text: M SC23109D-xxBS/DS3 1999.03.25 OKI semiconductor M 1,048,576 Word By 9 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE_ G E N E R A L D E SC R IP T IO N The Oki MSC23109D-xxBS/DS3 is a fully dccoded, 1,048,576 word X 9 bit CMOS dynamic random
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SC23109D-xxBS/DS3
SC23109D-xxBS/DS3_
MSC23109D-xxBS/DS3
30-pin
MSC23109D-xxBS3
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TDA 7786
Abstract: crystal washing machine service manual sfd 655 triac tag 8739 UM1233 E36 conclusion on lpg gas detector TL507 project on digital voltmeter using IC 7107 RS 307-402 TDA7786 causing for zero leading suppression 7447
Text: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system
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414256-10
Abstract: 414256 MSM414256-10 MSM414256-12 MSM414256-12RS
Text: O K I S E M I C O N D U C T O R GR O U P ôi OKI » Ë J b 7 E M S M 0 OODSSbt, 5 | ~ ¿.6724240 O K I S E M I C O N D U C T O R G R O U P semiconductor 89D 02566 MSM414256RS 262,144-WORD X ~J7 D 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM414256RS is a new generation dynamic RAM organized as 262,144 words by 4 bits.
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b72ME40
MSM414256RS
144-WORD
MSM414256RS
20-pin
414256-10
414256
MSM414256-10
MSM414256-12
MSM414256-12RS
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Untitled
Abstract: No abstract text available
Text: ^ 7 2 4 0 TOSHIBA 002Ö3T7 TIT TC51Y18165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The TC51V18165BFT is the Hyper Page Mode (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC51V18165BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide
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TC51Y18165BFT-70
TC51V18165BFT
B-146
002A404
DR16190695
TC51V18165BFT-70
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PLS167AN
Abstract: IRZ 46 PLS167A PLS167AA PLS167N PLS Philips handbook
Text: Philips Semiconductors Programmable Logic Devices Product specification Programmable logic sequencers 0 . _ R (14x48x6 P LS 167/A DESCRIPTION FEATURES The PLS167 and PLS167A are bipolar, Programmable Logic State machines of the Mealy type. The Programmable Logic
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14x48x6)
PLS167/A
PLS167
PLS167A
PLS167AN
IRZ 46
PLS167AA
PLS167N
PLS Philips handbook
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Untitled
Abstract: No abstract text available
Text: VOLTAGE DETECTOR N NJM2405 N JM 2405 is a d u a l c o m p a ra to r, inclu d in g the high precision reference voltage circuit. Both ch an n els h av e hysteresis pins, so it co u ld p ro v id e th e hysteretic function for systems. It has the w ide ran g e o f o p eratin g voltage a n d w orks w ith less cu rren t consum ption, so th a t it is suitable for detecting a b n o rm a l
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NJM2405
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