SUP85N15-21
Abstract: sup85n15 SUP85N15-21-E3
Text: SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 150 0.021 at VGS = 10 V 85 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch
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SUP85N15-21
O-220AB
SUP85N15-21-E3
08-Apr-05
SUP85N15-21
sup85n15
SUP85N15-21-E3
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SUD50P10-43L
Abstract: No abstract text available
Text: New Product SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET Qg (Typ) RoHS 54 nC COMPLIANT TO-252
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SUD50P10-43L
O-252
SUD50P10-43L-E3
08-Apr-05
SUD50P10-43L
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Untitled
Abstract: No abstract text available
Text: SUP40N10-30 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 40 0.034 at VGS = 6 V 37.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT
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SUP40N10-30
O-220AB
SUP40N10-30-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SUD50N04-09H Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A)c Qg (Typ) 40 0.009 at VGS = 10 V 50 55 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • High Threshold Voltage At High Temperature
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SUD50N04-09H
O-252
SUD50N04-09H-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUR50N06-07L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0074 at VGS = 10 V 96 0.0088 at VGS = 4.5 V 88 V(BR)DSS (V) 60 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS COMPLIANT APPLICATIONS
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SUR50N06-07L
O-252
SUR50N06-07L-E3
18-Jul-08
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SUP85N15-21-E3
Abstract: SUP85N15-21 SUP85N1521E3
Text: SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 150 0.021 at VGS = 10 V 85 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch
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SUP85N15-21
O-220AB
SUP85N15-21-E3
18-Jul-08
SUP85N15-21-E3
SUP85N15-21
SUP85N1521E3
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Untitled
Abstract: No abstract text available
Text: New Product SUD50N06-07L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0074 at VGS = 10 V 96 0.0088 at VGS = 4.5 V 88 V(BR)DSS (V) 60 • TrenchFET Power MOSFETS • 175 °C Junction Temperature RoHS
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SUD50N06-07L
O-252
SUD50N06-07L-E3
08-Apr-05
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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SUD50P04-13L-E3
Abstract: SUD50P04-13L
Text: New Product SUD50P04-13L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 rDS(on) (Ω) ID (A) 0.013 at VGS = - 10 V - 60a 0.022 at VGS = - 4.5 V - 48 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS
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SUD50P04-13L
O-252
SUD50P04-13L-E3
08-Apr-05
SUD50P04-13L-E3
SUD50P04-13L
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74281
Abstract: sup90n08-4m8p
Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)
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SUP90N08-4m8P
O-220AB
SUP90N08-4m8P-E3
18-Jul-08
74281
sup90n08-4m8p
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SUM90N08
Abstract: 4A88
Text: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)
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SUM90N08-4m8P
O-263
SUM90N08-4m8P-E3
18-Jul-08
SUM90N08
4A88
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SUP18N15-95
Abstract: SUP18N15-95-E3 06AUG07
Text: SUP18N15-95 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) ID (A) 0.095 at VGS = 10 V 18 0.100 at VGS = 6 V 17.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT
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SUP18N15-95
O-220AB
SUP18N15-95-E3
08-Apr-05
SUP18N15-95
SUP18N15-95-E3
06AUG07
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Untitled
Abstract: No abstract text available
Text: New Product SUD50N06-08H Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)c Qg (Typ) 60 0.0078 at VGS = 10 V 93 94 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg Tested High Threshold at High Temperature
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SUD50N06-08H
O-252
SUD50N06-08H0-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product SUD50N04-07L Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0074 at VGS = 10 V 65 0.0011 at VGS = 4.5 V 54 V(BR)DSS (V) 40 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Threshold
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SUD50N04-07L
O-252
SUD50N04-07L
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product SUD35N05-26L Vishay Siliconix N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.020 at VGS = 10 V 35 0.026 at VGS = 4.5 V 30 VDS (V) 55 • TrenchFET Power MOSFETS • 175 °C Rated Maximum Junction Temperature
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SUD35N05-26L
O-252
SUD35N05-26L
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUP40N10-35 Vishay Siliconix N-Channel 105-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature ID (A) 0.035 at VGS = 10 V 37.5 0.038 at VGS = 6 V 36.0 RoHS COMPLIANT TO-220AB
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SUP40N10-35
O-220AB
SUP40N10-35-E3
08-Apr-05
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SUD17N25-165
Abstract: SUD17N25-165-E3
Text: New Product SUD17N25-165 Vishay Siliconix N-Channel 250-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 250 0.165 at VGS = 10 V 17 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS COMPLIANT D TO-252 G Drain Connected to Tab
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SUD17N25-165
O-252
SUD17N25-165-E3
18-Jul-08
SUD17N25-165
SUD17N25-165-E3
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SUD50N06-08H
Abstract: No abstract text available
Text: New Product SUD50N06-08H Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)c Qg (Typ) 60 0.0078 at VGS = 10 V 93 94 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg Tested High Threshold at High Temperature
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SUD50N06-08H
O-252
SUD50N06-08H0-E3
18-Jul-08
SUD50N06-08H
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SUP18N15-95
Abstract: SUP18N15-95-E3
Text: SUP18N15-95 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) ID (A) 0.095 at VGS = 10 V 18 0.100 at VGS = 6 V 17.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT
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SUP18N15-95
O-220AB
SUP18N15-95-E3
18-Jul-08
SUP18N15-95
SUP18N15-95-E3
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SUP57N20-33
Abstract: SUP57N20-33-E3
Text: SUP57N20-33 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.033 at VGS = 10 V 57 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Isolated DC/DC converters
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SUP57N20-33
O-220AB
SUP57N20-33-E3
18-Jul-08
SUP57N20-33
SUP57N20-33-E3
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SUD50N06-07L
Abstract: SUD50N06-07L-E3
Text: New Product SUD50N06-07L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0074 at VGS = 10 V 96 0.0088 at VGS = 4.5 V 88 V(BR)DSS (V) 60 • TrenchFET Power MOSFETS • 175 °C Junction Temperature RoHS
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SUD50N06-07L
O-252
SUD50N06-07L-E3
18-Jul-08
SUD50N06-07L
SUD50N06-07L-E3
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SUD50P10-43L
Abstract: A38S
Text: New Product SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET Qg (Typ) RoHS 54 nC COMPLIANT TO-252
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SUD50P10-43L
O-252
SUD50P10-43L-E3
18-Jul-08
SUD50P10-43L
A38S
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74281
Abstract: No abstract text available
Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)
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SUP90N08-4m8P
O-220AB
SUP90N08-4m8P-E3
08-Apr-05
74281
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4 bit binary multiplier
Abstract: diagram for 4 bits binary multiplier circuit Toggle flip flop LS7166 LS7166-SOIC LS7166 cmos
Text: S7166 ^ncoc*er *° M icroprocessor _ Interface Chip_ . v. ~ Features: • Preloadable 24-bit Up/Down Counter ° Choice of two 20-pin packages: ° SOIC Surface M ount or DIP • XI or X2 or X4 Resolution Multiplier • Binary or BCD • Divide-by-N
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OCR Scan
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LS7166
24-bit
20-pin
4 bit binary multiplier
diagram for 4 bits binary multiplier circuit
Toggle flip flop
LS7166-SOIC
LS7166 cmos
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