SAMSUNG MEMORY 2006 Search Results

SAMSUNG MEMORY 2006 Result Highlights (5)

Part	Manufacturer	Description	Download
XPN12006NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF)
CS-DNPDM6MMX2-006	Amphenol Cables on Demand	Amphenol CS-DNPDM6MMX2-006 Premium 6-pin Mini-DIN 6 (MD6) Cable - Mini-DIN 6 Male to Mini-DIN 6 Male 6ft	Datasheet
MD2114A-5	Rochester Electronics LLC	SRAM
MC28F008-10/B	Rochester Electronics LLC	EEPROM,
HM3-6504B-9	Rochester Electronics LLC	Standard SRAM, 4KX1, 220ns, CMOS, PDIP18

SAMSUNG MEMORY 2006 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
gddr3 Abstract: SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA Text: Samsung HighPerformance 512Mb GDDR3 Graphics Memory Samsung’s GDDR3 is next-generation, JEDEC-standard graphics memory for the most advanced 3D applications. Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung graphics memory has played an important	Original	512Mb 200Mhz 128Mb 8Mx16 K4D261638F-TC5A DS-06-GDRAM-001 gddr3 SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA	PDF
samsung 167 fbga Abstract: Network Switches K7R640982M K7R323684C K7R160982B K7R161882B K7R161884B K7R163682B K7R163684B K7R320982C Text: Samsung QDR II SRAM High-Bandwidth Memory for Advanced Network Equipment Memory Technology Processes Four Times More Data Samsung offers a broad portfolio of Designers of next-generation telecommunications equipment require high-bandwidth memory for the	Original	K7R323682C K7R323684C K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M 165-pin DS-09-SRAM-001 samsung 167 fbga Network Switches K7R640982M K7R323684C K7R160982B K7R161882B K7R161884B K7R163682B K7R163684B K7R320982C	PDF
samsung 8Gb nand flash Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr Text: Samsung OneNAND Flash Fusion Memory Featuring High-Density NAND Flash with a NOR Interface Samsung OneNAND™ Flash What is OneNAND? OneNAND for Handsets Samsung’s OneNAND meets the memory-hungry needs of next-generation devices by providing a single-chip flash	Original	108MB/s 256Mb BR-06-NAND-001 samsung 8Gb nand flash oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr	PDF
samsung ddr3 Abstract: DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket Text: Samsung DDR3 SDRAM Next-Generation Memory Will Reach 1.6Gb/second Samsung DDR3 Unbuffered DIMMs will be available in densities from 256MB to 2GB and DDR3; component densities are 512Mb to 1Gb. Massive Bandwidth and Low Power Consumption Tomorrow’s main memory standard, Samsung	Original	256MB 512Mb Samsun378B2873CZ0-C 128Mx8) 256Mx64 M378B5673CZ0-C DS-06-DRAM-006 samsung ddr3 DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket	PDF
Untitled Abstract: No abstract text available Text: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.	Original	K7K1636T2C K7K1618T2C 512Kx36 K7S1636T4C K7S1618T4C 1Mx18 11x15	PDF
samsung 2gb ddr2 Abstract: DDR2 ddr2 datasheet M393T6553CZ3 DDR333 samsung ddr2 512mb Text: Samsung DDR2: When Performance Matters The Ultimate in Server Main Memory Samsung’s broad line of high-density memory modules delivers the ultimate in computing power, flexibility and performance for servers. High-Density Memory to Support Maximum Bandwidth and Fast	Original	512Mx72 M393T5168AZ0 DS-06-DRAM-004 samsung 2gb ddr2 DDR2 ddr2 datasheet M393T6553CZ3 DDR333 samsung ddr2 512mb	PDF
DDR Modules Abstract: samsung ddr DDR 333 M312L5128MT0 4GB RAM 256MX4 TSOP 66 Package Text: 4GB DDR DIMMs Samsung 4GB DDR registered DIMMs are available at speeds of 266 and 333 Mbps. The Memory Solution for Optimized Server Performance Today’s servers require extensive memory for fast data access and overall performance. As the world’s memory leader, Samsung offers the	Original	512Mx72 512Mx4) M312L5128MT0 DS-06-DRAM-001 DDR Modules samsung ddr DDR 333 4GB RAM 256MX4 TSOP 66 Package	PDF
samsung rfs Abstract: SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FTL samsung xsr SAMSUNG NAND FLASH TRANSLATION LAYER BML STL NAND XSR oneNand flash onenand xsr Flash Translation Layer Text: Introduction to Samsung’s Linux Flash File System - RFS Application Note November-2006, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks RFS is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.	Original	November-2006, samsung rfs SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FTL samsung xsr SAMSUNG NAND FLASH TRANSLATION LAYER BML STL NAND XSR oneNand flash onenand xsr Flash Translation Layer	PDF
DDR2 Datasheet 256MB Abstract: DDR2 samsung 2gb ddr2 samsung ddr2 240pin 1gb ddr2 datasheet DDR2 DIMM 240 pin names 32MX64 ddr2 800 M378T2953cz3 M378T3354CZ3 Text: Samsung DDR2: When Performance Matters Highest-Bandwidth Memory for Desktops Samsung offers the industry’s broadest selection of DDR2 DIMMs, available in densities from 256MB to 4GB. Today’s Fastest DRAM Delivers Greater Speed, Uses Less Power DDR2 is the highest-bandwidth memory available	Original	256MB 128Mx8) 256Mx64 M378T5663AZ3Lead-free DS-06-DRAM-003 DDR2 Datasheet 256MB DDR2 samsung 2gb ddr2 samsung ddr2 240pin 1gb ddr2 datasheet DDR2 DIMM 240 pin names 32MX64 ddr2 800 M378T2953cz3 M378T3354CZ3	PDF
samsung tfs4 Abstract: BML STL SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung xsr SAMSUNG NAND FLASH TRANSLATION LAYER tfs4_format FAT12 FAT16 FAT32 TFS4 Text: TFS4 INITIALIZATION PROCESS Application Note November-2006, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks TFS4 is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.	Original	November-2006, samsung tfs4 BML STL SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung xsr SAMSUNG NAND FLASH TRANSLATION LAYER tfs4_format FAT12 FAT16 FAT32 TFS4	PDF
samsung tfs4 Abstract: No abstract text available Text: TFS4 FAST SEEK Technical Paper November-2007, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks TFS4 is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.	Original	November-2007, samsung tfs4	PDF
0001h Abstract: 0000H 1111H Text: Write method & Mode Change June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The Leader in Memory Technology UtRAM Write	Original	5555h) 5555h 0001h 0000H 1111H	PDF
samsung tfs4 Abstract: 39TB TFS4 Samsung "Flash " Text: TFS4 CONFIGURING CLUSTER SIZE Application Note November-2006, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks TFS4 is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.	Original	November-2006, 128KB 256KB samsung tfs4 39TB TFS4 Samsung "Flash "	PDF
samsung xsr Abstract: FAT12 samsung tfs4 onenand xsr transistor directory FAT16 FAT32 FAT-16 TFS4 Flash Memory SAMSUNG OneNAND Text: TFS4 FAST LOOKUP METHOD Application Note November-2006, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks TFS4 is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.	Original	November-2006, KFG1G16, samsung xsr FAT12 samsung tfs4 onenand xsr transistor directory FAT16 FAT32 FAT-16 TFS4 Flash Memory SAMSUNG OneNAND	PDF

CMD55 Abstract: ACMD42 ACMD51 cmd6 sd card ACMD13 mmc EXT_CSD ACMD23 MMC 4.2 EXT_CSD CMD13 Text: Application Note Comparison btw. MMC & SD June 16, 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The Leader in Memory Technology	Original	CMD35 CMD36 ACMD22 ACMD23 ACMD42 CMD55) CMD55 ACMD42 ACMD51 cmd6 sd card ACMD13 mmc EXT_CSD ACMD23 MMC 4.2 EXT_CSD CMD13	PDF
SAMSUNG DDR4 Abstract: samsung toggle mode NAND samsung ddr3 RAM DDR2 samsung 30nm green ddr3 HS21XM ddr2 ram slots for laptop Samsung 8Gb MLC Nand flash DIMM DDR4 socket DDR3 DIMM spec samsung Text: Optimizing Virtualization using Advanced Memory and Storage Technology Speakers: Sylvie Kadivar, PhD, Director, DRAM Strategic Marketing, Samsung Steve Weinger, Director, Flash Marketing, Samsung 1/? No.2 for 8 years in Semiconductor Industry *Source : Gartner March 2010	Original	320GB SAMSUNG DDR4 samsung toggle mode NAND samsung ddr3 RAM DDR2 samsung 30nm green ddr3 HS21XM ddr2 ram slots for laptop Samsung 8Gb MLC Nand flash DIMM DDR4 socket DDR3 DIMM spec samsung	PDF
SAMSUNG MEMORY 2006 Abstract: K1B2816B2A 128MB ADIE Text: UtRAM 128Mb M-die 100nm & A-die(90nm) Comparison Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The Leader in Memory Technology	Original	128Mb 100nm) K1B2816B2A K1B2816B6M 104Mhz 66Mhz 128Mb SAMSUNG MEMORY 2006 K1B2816B2A ADIE	PDF
samsung xsr Abstract: NAND XSR onenand xsr XSR Porting Guide oneNand flash samsung nand flash onenand block header samsung flash bad block mapping STL Porting Guide Text: XSR1.5 WEAR LEVELING Application Note May-2007, Version 1.0 Copyright Notice Copyright 2007, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks XSR is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.	Original	May-2007, samsung xsr NAND XSR onenand xsr XSR Porting Guide oneNand flash samsung nand flash onenand block header samsung flash bad block mapping STL Porting Guide	PDF
samsung xsr Abstract: bad block NAND XSR bad block management samsung XSR Porting Guide bad block samsung samsung flash bad block mapping Text: XSR 1.5 BAD BLOCK MANAGEMENT Application Note May-2007, Version 1.0 Copyright Notice Copyright 2007, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks XSR is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.	Original	May-2007, samsung xsr bad block NAND XSR bad block management samsung XSR Porting Guide bad block samsung samsung flash bad block mapping	PDF
samsung 2GB X16 Nand flash Abstract: SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH Text: Multi-Chip Package Technology from Samsung The ultimate memory solution for mobile devices MCPs: New Memory Solution for Today’s Handhelds As the popularity of handheld electronic devices continues to expand, the Best Source for MCPs memory solution of choice for designers of these products has become	Original	BR-06-MEM-001 samsung 2GB X16 Nand flash SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH	PDF
DDR2-667 Abstract: DDR2-800 Unpopulated75 ba001 Text: Application Application Note Note DDR2 Application Note ODT On Die Termination Control March 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.	Original	150ohm DDR2-400/533, 75ohm DDR2-667/800, 50ohm 75ohm DDR2-667 DDR2-800 Unpopulated75 ba001	PDF
UtRAM Abstract: K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H Text: Write method & Mode Change This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA - K1B6416B6C, K1B3216BDD June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD	Original	K1B5616B2M, K1B5616BAM, K1B5616BBM K1B2816B2A, K1B2816BAA, K1B2816BBA K1B6416B6C, K1B3216BDD 5555h) 5555h UtRAM K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H	PDF
22721 Abstract: BE 22721 M378T6553BZ dimm pcb layout M378T3354Bz DDR2 sodimm pcb layout DDR2 pcb layout M470T6554CZ3 M470T2953 M391T5663AZ3 Text: Application Application Note Note DDR2 Application Note Implementation “Dummy Pad” on the module PCB March 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application	Original	Memor00 M470T6554BZ M470T6554CZ0 M470T6554CZ3 M470T2864AZ3 M470T3354BZ M470T3354CZ0 M470T3354CZ3 22721 BE 22721 M378T6553BZ dimm pcb layout M378T3354Bz DDR2 sodimm pcb layout DDR2 pcb layout M470T6554CZ3 M470T2953 M391T5663AZ3	PDF
K1B5616BBM Abstract: K1B2816B2A K1B5616B2M K1B5616BAM Text: Mode, Status & current during Power Up This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD	Original	K1B5616B2M, K1B5616BAM, K1B5616BBM K1B2816B2A, K1B2816BAA, K1B2816BBA 200us K1B5616BBM K1B2816B2A K1B5616B2M K1B5616BAM	PDF

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SAMSUNG MEMORY 2006 Search Results

SAMSUNG MEMORY 2006 Result Highlights (5)

SAMSUNG MEMORY 2006 Datasheets Context Search

gddr3

samsung 167 fbga

samsung 8Gb nand flash

samsung ddr3

Untitled

samsung 2gb ddr2

DDR Modules

samsung rfs

DDR2 Datasheet 256MB

samsung tfs4

samsung tfs4

0001h

samsung tfs4

samsung xsr

CMD55

SAMSUNG DDR4

SAMSUNG MEMORY 2006

samsung xsr

samsung xsr

samsung 2GB X16 Nand flash

DDR2-667

UtRAM

22721

K1B5616BBM