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    M366S3323DTS

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M366S3323DTS M366S3323DTS SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S3323DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M366S3323DTS M366S3323DTS 32Mx64 16Mx8, 400mil 168-pin

    M366S1723DTS

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M366S1723DTS M366S1723DTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1723DTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M366S1723DTS M366S1723DTS 16Mx64 16Mx8, 400mil 168-pin

    m463s0924bt0-l1l

    Abstract: K4S281632B-TC1H M463S0924BT0-L1H SAMSUNG TL1L K4S281632B-TC
    Text: PC100 µDIMM M463S0924BT0 M463S0924BT0 SDRAM µ DIMM 8Mx64 SDRAM µDIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S0924BT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100 M463S0924BT0 M463S0924BT0 8Mx64 8Mx16, 400mil 144-pin m463s0924bt0-l1l K4S281632B-TC1H M463S0924BT0-L1H SAMSUNG TL1L K4S281632B-TC

    Untitled

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M366S0924DTS M366S0924DTS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M366S0924DTS M366S0924DTS 8Mx64 8Mx16, 400mil 168-pin

    M464S0924DTS

    Abstract: No abstract text available
    Text: M464S0924DTS PC133/PC100 SODIMM M464S0924DTS SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0924DTS is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    Original     		PDF M464S0924DTS PC133/PC100 M464S0924DTS 8Mx64 8Mx16, 100MHz M464S0924DTS-L1L/C1L

    m464s1724dts-l7a samsung

    Abstract: M464S1724DTS
    Text: M464S1724DTS PC133/PC100 SODIMM M464S1724DTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1724DTS is a 16M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    Original     		PDF M464S1724DTS PC133/PC100 M464S1724DTS 16Mx64 8Mx16 100MHz M464S1724DTS-L1L/C1L m464s1724dts-l7a samsung

    M366S1723DTU

    Abstract: No abstract text available
    Text: PC133/PC100 Low Profile Unbuffered DIMM M366S1723DTU M366S1723DTU SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1723DTU is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M366S1723DTU M366S1723DTU 16Mx64 16Mx8, 400mil 168-pin

    M374S1723DTS

    Abstract: k4s28083
    Text: PC133/PC100 Unbuffered DIMM M374S1723DTS M374S1723DTS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1723DTS is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M374S1723DTS M374S1723DTS 16Mx72 16Mx8, 400mil 168-pin k4s28083

    M366S3323DTU

    Abstract: No abstract text available
    Text: PC133/PC100 Low Profile Unbuffered DIMM M366S3323DTU M366S3323DTU SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S3323DTU is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M366S3323DTU M366S3323DTU 32Mx64 16Mx8, 400mil 168-pin

    M374S1723DTU

    Abstract: No abstract text available
    Text: PC133/PC100 Low Profile Unbuffered DIMM M374S1723DTU M374S1723DTU SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1723DTU is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M374S1723DTU M374S1723DTU 16Mx72 16Mx8, 400mil 168-pin

    SAMSUNG TL1L

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM K4S510432M 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510432M Preliminary CMOS SDRAM


    Original     		PDF K4S510432M 512Mbit K4S510432M A10/AP SAMSUNG TL1L

    Untitled

    Abstract: No abstract text available
    Text: PC133/PC100 SODIMM M464S3323DN1 M464S3323DN1 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M464S3323DN1 is a 32M bit x 64 Synchronous Part No.


    Original     		PDF PC133/PC100 M464S3323DN1 M464S3323DN1 32Mx64 16Mx8, M464S3323DN1-C/L7C 133MHz 144-pin

    K4S511632M

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM K4S511632M 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S511632M Preliminary CMOS SDRAM


    Original     		PDF K4S511632M 512Mbit 16bit K4S511632M A10/AP

    K4S510832M

    Abstract: RA12
    Text: Preliminary CMOS SDRAM K4S510832M 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510832M Preliminary CMOS SDRAM


    Original     		PDF K4S510832M 512Mbit K4S510832M A10/AP RA12

    K4S641632F-TC75

    Abstract: SAMSUNG TL1L 1M Synchronous DRAM samsung
    Text: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		PDF K4S641632F 64Mbit 16Bit 100MHz K4S641632F-TC75 SAMSUNG TL1L 1M Synchronous DRAM samsung

    K4S510832M

    Abstract: RA12
    Text: K4S510832M CMOS SDRAM 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S510832M CMOS SDRAM Revision History Revision 0.0 Mar. 2001


    Original     		PDF K4S510832M 512Mbit K4S510832M A10/AP RA12

    K4S511632

    Abstract: K4S511632M
    Text: K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S511632M CMOS SDRAM Revision History Revision 0.0 Mar. 2001


    Original     		PDF K4S511632M 512Mbit 16bit K4S511632M A10/AP K4S511632

    M374S3323DTU

    Abstract: No abstract text available
    Text: PC133/PC100 Low Profile Unbuffered DIMM M374S3323DTU M374S3323DTU SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S3323DTU is a 32M bit x 72 Synchronous


    Original     		PDF PC133/PC100 M374S3323DTU M374S3323DTU 32Mx72 16Mx8, 400mil 168-pin

    K4S641632F-TC75

    Abstract: No abstract text available
    Text: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		PDF K4S641632F 64Mbit 16Bit 100MHz A10/AP K4S641632F-TC75

    CA12

    Abstract: K4S510432M RA12
    Text: K4S510432M CMOS SDRAM 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S510432M CMOS SDRAM Revision History Revision 0.0 Mar. 2001


    Original     		PDF K4S510432M 512Mbit K4S510active A10/AP CA12 K4S510432M RA12

    K4S561632C-TC75

    Abstract: K4S561632C-TC1L
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Mar. 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001


    Original     		PDF K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC75 K4S561632C-TC1L

    K4S641632E-TC75

    Abstract: No abstract text available
    Text: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632E 64Mbit 16Bit K4S641632E A10/AP K4S641632E-TC75

    K4S281632C-TL1L

    Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 May 2000 Rev 0.1 May 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924CT0-L1L, C1L • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632C-TL1L, C1L


    Original     		PDF 144pin) 128Mb M466S0924CT0-L1L, 8Mx64 8Mx16 K4S281632C-TL1L, 000mil 4K/64ms 128bytes 256bytes K4S281632C-TL1L M466S1723CT2-L1L M466S1723CT3-L1L

    samsung date code

    Abstract: 16MX64 sdram samsung
    Text: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (256Mb B-die base) Rev. 0.1 Apr. 2000 Rev 0.1 Apr. 2000 SERIAL PRESENCE DETECT PC100 SODIMM M464S1654BT1-L1H/L1L, C1H/C1L • Organization : 8MX64 • Composition : 16MX16 *4 • Used component part # : K4S561632B-TL1H/TL1L,TC1H/TC1L


    Original     		PDF PC100 144pin) 256Mb M464S1654BT1-L1H/L1L, 8MX64 16MX16 K4S561632B-TL1H/TL1L 4K/64ms samsung date code 16MX64 sdram samsung