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    K4S511632 Price and Stock

    Samsung Semiconductor K4S511632M-TL1H000

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    Bristol Electronics K4S511632M-TL1H000 5
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    Samsung Semiconductor K4S511632M-TC75000

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    Samsung Semiconductor K4S511632D-UC75

    IC,SDRAM,4X8MX16,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components K4S511632D-UC75 206
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    K4S511632D-UC75 3
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    Samsung Semiconductor K4S511632BUC75

    512MB B-DIE SDRAM Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54
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    ComSIT USA K4S511632BUC75 64
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    Samsung Electronics Co. Ltd K4S511632MTC75

    8M X 16 BIT X 4 BANKS SYNCHRONOUS DRAM Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54
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    ComSIT USA K4S511632MTC75 7
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    K4S511632 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S511632B-CL75 Samsung Electronics 512Mb B-die SDRAM Specification Original PDF
    K4S511632B-TC75 Samsung Electronics 512Mb B-die SDRAM Specification Original PDF
    K4S511632B-TCL75 Samsung Electronics 512Mb B-die SDRAM Specification Original PDF
    K4S511632B-UC75 Samsung Electronics 512Mb B-die SDRAM Specification Original PDF
    K4S511632C Unknown DDP 512Mbit SDRAM Original PDF
    K4S511632C Samsung Electronics 8M x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S511632C-KC Samsung Electronics Original PDF
    K4S511632C-KC/L1H Samsung Electronics 8M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S511632C-KC/L1H Samsung Electronics DDP 512Mbit SDRAM Original PDF
    K4S511632C-KC/L1L Samsung Electronics 8M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S511632C-KC/L1L Samsung Electronics DDP 512Mbit SDRAM Original PDF
    K4S511632C-KC/L75 Samsung Electronics 8M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S511632C-KC/L75 Samsung Electronics DDP 512Mbit SDRAM Original PDF
    K4S511632C-KC/L7C Samsung Electronics 8M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S511632C-KC/L7C Samsung Electronics DDP 512Mbit SDRAM Original PDF
    K4S511632C-L1H Samsung Electronics Original PDF
    K4S511632C-L1L Samsung Electronics Original PDF
    K4S511632C-L75 Samsung Electronics Original PDF
    K4S511632C-L7C Samsung Electronics Original PDF
    K4S511632D Samsung Electronics DDP 512Mbit SDRAM 8M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF

    K4S511632 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K4S511632D

    Abstract: No abstract text available
    Text: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		K4S511632D 512Mbit 16bit K4S511632D PDF

    K4S511632C

    Abstract: samsung cmos dram 4m x 4
    Text: K4S511632C CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations


    Original     		K4S511632C 512Mbit 16bit A10/AP K4S511632C samsung cmos dram 4m x 4 PDF

    K4S511632

    Abstract: K4S511632M
    Text: K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S511632M CMOS SDRAM Revision History Revision 0.0 Mar. 2001


    Original     		K4S511632M 512Mbit 16bit K4S511632M A10/AP K4S511632 PDF

    K4S511632B-TC75

    Abstract: M464S6554BTS-C7A "at command" Samsung K4S511632
    Text: SERIAL PRESENCE DETECT M464S6554BTS-C7A Organization :64Mx64 Composition :32M x 16* 8ea Used component part # :K4S511632B-TC75 # of rows in module:2 Rows # of banks in component :4 banks Feature :1250mil height & double sided Refresh :8K/64ms Contents : Byte #


    Original     		M464S6554BTS-C7A 64Mx64 K4S511632B-TC75 1250mil 8K/64ms 128bytes 100MHz 100MHz K4S511632B-TC75 M464S6554BTS-C7A "at command" Samsung K4S511632 PDF

    K4S511632B-TC75

    Abstract: M464S3354BTS-C7A intel date code format
    Text: SERIAL PRESENCE DETECT M464S3354BTS-C7A Organization :32Mx64 Composition :32M x 16* 4ea Used component part # :K4S511632B-TC75 # of rows in module:1 Row # of banks in component :4 banks Feature :1250mil height & single sided Refresh :8K/64ms Contents : Byte #


    Original     		M464S3354BTS-C7A 32Mx64 K4S511632B-TC75 1250mil 8K/64ms 128bytes 100MHz 100MHz K4S511632B-TC75 M464S3354BTS-C7A intel date code format PDF

    K4S511632M

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM K4S511632M 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S511632M Preliminary CMOS SDRAM


    Original     		K4S511632M 512Mbit 16bit K4S511632M A10/AP PDF

    K4S510832D

    Abstract: K4S510432D k4s511632d K4S511632D-UC
    Text: K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		K4S510432D K4S510832D K4S511632D 512Mb A10/AP k4s511632d K4S511632D-UC PDF

    K4S511632C

    Abstract: No abstract text available
    Text: K4S511632C CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		K4S511632C 512Mbit 16bit K4S511632C PDF

    54-TSOP

    Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
    Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


    Original     		256MB, 512MB, 168pin 512Mb 62/72-bit 54-TSOP K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    samsung capacitance Manufacturing location

    Abstract: No abstract text available
    Text: PC100/PC133 µSODIMM M463S3254CK1 32Mx64 SDRAM µSODIMM Revision 0.2 Sept. 2001 Rev. 0.2 Sept. 2001 M463S3254CK1 PC100/PC133 µSODIMM Revision History Revision 0.0 July 2001 • First published. Revision 0.1 (Aug. 2001) • SPD correction Revision 0.2 (Sept. 2001)


    Original     		PC100/PC133 M463S3254CK1 32Mx64 100MHz M463Sm samsung capacitance Manufacturing location PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    K4S641632k uc60

    Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
    Text: General Information SDRAM SDRAM Product Guide November 2007 Memory Division November 2007 General Information SDRAM A. SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 S X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM


    Original     		4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 80TYP 25TYP K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N PDF

    Untitled

    Abstract: No abstract text available
    Text: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


    Original     		256MB, 512MB 144pin 64-bit PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    K4S511632B-UC75

    Abstract: K4S511632B-UL75 K4S511632B K4S510432B-UC
    Text: CMOS SDRAM SDRAM 512Mb B-die x4, x8, x16 512Mb B-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.1 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Revision. 1.1 August 2004


    Original     		512Mb 16Bit A10/AP K4S511632B-UC75 K4S511632B-UL75 K4S511632B K4S510432B-UC PDF

    K4S511632D

    Abstract: SH7203 SH7263 0C00 EDS1216AGTA resistor SH2A K4S511632
    Text: APPLICATION NOTE SH7263/SH7203 Groups Example of BSC SDRAM Interface Connection 16-Bit Data Bus Introduction This application note describes the synchronous DRAM (SDRAM) interface of the bus state controller (BSC) and provides a practical example of connection with a data-bus width of 16 bits.


    Original     		SH7263/SH7203 16-Bit SH7263/SH7203 REJ06B0760-0100/Rev K4S511632D SH7203 SH7263 0C00 EDS1216AGTA resistor SH2A K4S511632 PDF

    M464S6554MTS

    Abstract: M464S6554MTS-C1H M464S6554MTS-C1L M464S6554MTS-C75 32MX16 K4S511632M
    Text: Preliminary PC133/PC100 SODIMM M464S6554MTS M464S6554MTS SDRAM SODIMM 64Mx64 SDRAM SODIMM based on 32Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S6554MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PC133/PC100 M464S6554MTS M464S6554MTS 64Mx64 32Mx16, 400mil 144-pin M464S6554MTS-C1H M464S6554MTS-C1L M464S6554MTS-C75 32MX16 K4S511632M PDF

    hynix hy57v281620

    Abstract: HY57V561620 HY39S512800 LPC2888 K4S280832 LPC2800 dwa 108 a MARKING CODE 436c MT48LC4M32A2 hp 433C
    Text: UM10208 LPC2880/LPC2888 User manual Rev. 02 — 1 June 2007 User manual Document information Info Content Keywords LPC2880, LPC2888, LPC288x, ARM, ARM7, embedded, 32-bit, microcontroller, USB 2.0, USB HS Abstract LPC288x User manual UM10208 NXP Semiconductors


    Original     		UM10208 LPC2880/LPC2888 LPC2880, LPC2888, LPC288x, 32-bit, LPC288x UM10208 hynix hy57v281620 HY57V561620 HY39S512800 LPC2888 K4S280832 LPC2800 dwa 108 a MARKING CODE 436c MT48LC4M32A2 hp 433C PDF

    PC133 133Mhz cl3

    Abstract: intel date code format
    Text: PC100/PC133 µSODIMM M463S3254DK1 M463S3254DK1 SDRAM µ SODIMM 32Mx64 SDRAM µSODIMM based on 32Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S3254DK1 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PC100/PC133 M463S3254DK1 M463S3254DK1 32Mx64 32Mx16, 400mil 144-pin PC133 133Mhz cl3 intel date code format PDF

    K4S511632B

    Abstract: M464S3354BTS-C
    Text: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004


    Original     		256MB, 512MB 144pin 64-bit K4S511632B M464S3354BTS-C PDF

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G PDF

    K4S511632D-UC

    Abstract: K4S510832D K4s511632D k4s511632duc K4S511632D-UL K4S5 K4S511632D-UCL K4S510832 k4s511632d-u K4S510832DUC
    Text: SDRAM 512Mb D-die x4, x8, x16 CMOS SDRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		512Mb A10/AP K4S511632D-UC K4S510832D K4s511632D k4s511632duc K4S511632D-UL K4S5 K4S511632D-UCL K4S510832 k4s511632d-u K4S510832DUC PDF

    K4S511632B

    Abstract: K4S510432B-TC
    Text: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM


    Original     		512Mb 16Bit A10/AP K4S511632B K4S510432B-TC PDF