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    SEMISOUTH JFET Search Results

    SEMISOUTH JFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LF157H Rochester Electronics LLC LF157 - JFET Input Operational Amplifier Visit Rochester Electronics LLC Buy
    ISL28210FBZ-T13 Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28210FBZ-T7A Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28210FBZ Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28110FBZ-T7A Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation

    SEMISOUTH JFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SJEP120R100A

    Abstract: JFET semisouth SEMISOUTH SGDR300P1 silicon carbide JFET SGD300P1 silicon carbide j-fet SJEP120R100 silicon carbide SemiSouth Laboratories
    Text: Silicon Carbide PRELIMINARY SJEP120R100A Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C


    Original     		SJEP120R100A O-247 SJEP120R100A JFET semisouth SEMISOUTH SGDR300P1 silicon carbide JFET SGD300P1 silicon carbide j-fet SJEP120R100 silicon carbide SemiSouth Laboratories PDF

    SJEP170R550

    Abstract: SEMISOUTH 3E05 silicon carbide JFET JFET semisouth silicon carbide j-fet SJEP170 SJEP170R550 datasheet high voltage smps SJEP
    Text: Silicon Carbide PRELIMINARY SJEP170R550 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior


    Original     		SJEP170R550 O-247 SJEP170R550 SEMISOUTH 3E05 silicon carbide JFET JFET semisouth silicon carbide j-fet SJEP170 SJEP170R550 datasheet high voltage smps SJEP PDF

    SJEP120R063

    Abstract: SEMISOUTH sjep120r063 SEMISOUTH JFET semisouth silicon carbide JFET silicon carbide j-fet silicon carbide SJEP SJEP120 sjep120r0
    Text: Silicon Carbide PRELIMINARY SJEP120R063 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior


    Original     		SJEP120R063 O-247 SJEP120R063 SEMISOUTH sjep120r063 SEMISOUTH JFET semisouth silicon carbide JFET silicon carbide j-fet silicon carbide SJEP SJEP120 sjep120r0 PDF

    SJEP120R100

    Abstract: SEMISOUTH silicon carbide JFET semisouth sjEp120R100 SGD600P1 SGDR600P1 silicon carbide JFET semisouth
    Text: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C


    Original     		SJEP120R100 O-247 SJEP120R100 SEMISOUTH silicon carbide JFET semisouth sjEp120R100 SGD600P1 SGDR600P1 silicon carbide JFET semisouth PDF

    SJDP120R085

    Abstract: SEMISOUTH sjdp120 SJDP silicon carbide JFET JFET semisouth JFET semisouth Semisouth, SJDP120R085 silicon carbide j-fet silicon carbide sjdp120r
    Text: Silicon Carbide PRELIMINARY SJDP120R085 Product Summary Normally-On Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C


    Original     		SJDP120R085 O-247 SJDP120R085 SEMISOUTH sjdp120 SJDP silicon carbide JFET JFET semisouth JFET semisouth Semisouth, SJDP120R085 silicon carbide j-fet silicon carbide sjdp120r PDF

    SJEP120R100

    Abstract: SEMISOUTH silicon carbide JFET SJEP120 JFET semisouth silicon carbide j-fet SJEP semisouth sjEp120R100 induction heating schematic semisouth JFET
    Text: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C


    Original     		SJEP120R100 O-247 SJEP120R100 SEMISOUTH silicon carbide JFET SJEP120 JFET semisouth silicon carbide j-fet SJEP semisouth sjEp120R100 induction heating schematic semisouth JFET PDF

    ASJD1200R045

    Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
    Text: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		ASJD1200R045 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth silicon carbide JFET silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258 PDF

    SiC JFET

    Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP
    Text: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		ASJD1200R045 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth 5A JFET SEMISOUTH SJDP PDF

    JFET semisouth

    Abstract: SJEP120R050 SGDR600P1 SEMISOUTH SJEP120 SJEP120R063 AN-SS1 ixdd509 SiC JFET JFET
    Text: Demo Board Preliminary SGDR600P1 Two-Stage Opto Coupled Gate Driver Demo Board The SGDR600P1 is an optoisolated, two-stage gate driver optimized for high speed, hard switching of SemiSouth's SJEP120R050 and SJEP120R063 normally-off SiC VJFETs. The SGDR600P1 gate driver provides a peak output current of +6/- 3A


    Original     		SGDR600P1 5V/-15V SGDR600P1 SJEP120R050 SJEP120R063 SJEP120R050 JFET semisouth SEMISOUTH SJEP120 AN-SS1 ixdd509 SiC JFET JFET PDF

    Untitled

    Abstract: No abstract text available
    Text: New Power Semiconductor Module Combines MNPC Topology with SiC Switches Kuno Straub, Product Marketing Manager, Vincotech GmbH This article compares and contrasts two types of modules, one with silicon switches and the other with SiC silicon carbide switches. Vincotech flowMNPC 0 modules in 12mm


    Original     		30-kW 30-kW, SJEP120R100, PDF

    Untitled

    Abstract: No abstract text available
    Text: News Release FOR IMMEDIATE RELEASE Contacts: Media Contact: Karina Seifert Phone: +49 0 89 878067-115 karina.seifert@vincotech.com Product Contact: Michael Frisch Phone: +49 (0)89 878067-142 michael.frisch@vincotech.com FIRST STANDARD POWER MODULES WITH NORMALLY OFF SiC JFETs FOR HIGHPERFORMANCE SOLAR INVERTERS


    Original     		PDF

    SEMISOUTH

    Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
    Text: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		ASJD1200R085 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R085 O-247 ASJD1200R085 SEMISOUTH JFET semisouth SiC JFET semisouth JFET PDF

    JFET semisouth

    Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0
    Text: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		ASJE1200R063 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP120R063 O-247 ASJE1200R063 JFET semisouth SiC JFET SEMISOUTH sjep120r0 PDF

    JFET semisouth

    Abstract: SEMISOUTH SiC JFET
    Text: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		O-257 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 JFET semisouth SEMISOUTH SiC JFET PDF

    SEMISOUTH

    Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
    Text: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC


    Original     		-55oC 200oC 260oC* MIL-PRF-19500 O-257) O-257 SEMISOUTH 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045 PDF

    Untitled

    Abstract: No abstract text available
    Text: News Release FOR IMMEDIATE RELEASE Contacts: Product Communications: Michael Frisch Phone: +49 89 8780 67-147 michael.frisch@vincotech.com Media Contact: Karina Seifert Phone: +49 89 8780 67-115 karina.seifert@vincotech.com A COMPLETE RANGE OF POWER MODULES WITH VARIOUS SiC SWITCHES FOR HIGHPERFORMANCE, THREE-PHASE SOLAR INVERTERS


    Original     		PDF

    ASJE1200R100

    Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
    Text: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		O-258 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 O-257 SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120 silicon carbide JFET PDF

    ASJE1700R550

    Abstract: SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP170R550 SJEP
    Text: ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		ASJE1700R550 O-258 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 O-257 SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP PDF

    ASJE1200R063

    Abstract: SiC JFET JFET semisouth SJEP120 SJEP120R063 SEMISOUTH silicon carbide JFET sjep120r0
    Text: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		ASJE1200R063 O-258 260oC MIL-PRF-19500 MIL-STD-750 SJEP120R063 O-247 ASJE1200R063 O-257 SiC JFET JFET semisouth SJEP120 SEMISOUTH silicon carbide JFET sjep120r0 PDF

    SJEP170R550

    Abstract: semisouth JFET 3E05 SEMISOUTH JFET semisouth ASJE1700R550
    Text: ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		ASJE1700R550 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 semisouth JFET 3E05 SEMISOUTH JFET semisouth PDF

    SDC30S120

    Abstract: SEMISOUTH SGDR2500P2 SJEC120R100 SEMISOUTH SDC30S120 APTJC120AM13VCT1AG Semisouth SJEC120R100 JFET semisouth sic jfet diode t25 4 c3
    Text: APTJC120AM13VCT1AG VDSX = 1200V RDSon = 13 mΩ max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C Phase leg SiC Power Module Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features • • SiC JFETX, Normally off 8 * SJEC120R100 in parallel per switch


    Original     		APTJC120AM13VCT1AG SJEC120R100 SDC30S120 SGDR2500P2) APTJC120AM13VCT1AG SEMISOUTH SGDR2500P2 SEMISOUTH SDC30S120 Semisouth SJEC120R100 JFET semisouth sic jfet diode t25 4 c3 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTJC120AM13VCT1AG VDSX = 1200V RDSon = 13 m max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C Phase leg SiC Power Module Application •    Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features  


    Original     		APTJC120AM13VCT1AG SJEC120R100 SDC30S120 PDF

    SJEP120R125

    Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120
    Text: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2


    Original     		PDF

    Integrated cooling solutions hot up

    Abstract: No abstract text available
    Text: J U L Y 2 0 1 2 I S S U E N ° 6 I N D U S T R Y R E V I E W Integrated cooling solutions hot up Stacks of potential: Danfoss is using its ShowerPower cooling solution to build three dimensional power blocks which will offer especially high power density.


    Original     		RD100 Integrated cooling solutions hot up PDF