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    SG3000GX Search Results

    SG3000GX Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SG3000GXH23 Toshiba Scan PDF
    SG3000GXH23G Toshiba GATE TURN-OFF THYRISTOR Scan PDF
    SG3000GXH23G Toshiba Scan PDF
    SG3000GXH24 Toshiba INVERTER APPLICATION Scan PDF
    SG3000GXH24 Toshiba GATE TURN-OFF THYRISTOR Scan PDF
    SG3000GXH25 Toshiba Scan PDF
    SG3000GXH29 Toshiba INVERTER APPLICATION Scan PDF

    SG3000GX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SG600EX21

    Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18
    Text: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01


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    PDF DS5549 DS5549-1 1501-25A01 DG406BP25 2001-25A01 DG646BH25 2003-45A01 DG648BH45 2501-25A01 SG600EX21 SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18

    CS thyristor

    Abstract: Thyristor CS 165 SHR400 cs50n SG1500GXH25 SL3000GX22 2500v SHR400R22 reverse conducting thyristor 4500v
    Text: Gate Turn-O ff Thyristors Anode Short Type Reverse Conducting Type Symmetrical Type -> Peak Off State Voltage 2500V 4500V Type No. SG800EX25* SG1400EX25" SGB00GXH25 SGR3000EX26 SG1500GXH25 SG3000GXH25 SGR3000GXH26 It q q m 800 1400 1500 3000 C2 C2 * underdevelopment


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    PDF SGB00GXH25 SG1500GXH25 SG3000GXH25 SGR3000EX26 SGR3000GXH26 SG800EX25* SG1400EX25" SHR400R22 SL1500GX22 SL2500JX21 CS thyristor Thyristor CS 165 SHR400 cs50n SL3000GX22 2500v SHR400R22 reverse conducting thyristor 4500v

    SG3000GXH29

    Abstract: SG3000GXH 13-108D1A
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent


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    PDF SG3000GXH29 SG3000GXH29) SG3000GXH29 SG3000GXH 13-108D1A

    SG3000GXH29

    Abstract: No abstract text available
    Text: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us


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    PDF SG3000GXH23G 000V// --25A, SG3000GXH29. SG3000GXH29

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm = 4500V Note 1 Repetitive Peak Reverse Voltage : V r r m = 4000V R.M.S On-State Current : IT(RMS) = 800A


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    PDF SG3000GXH25 S120MAX. 300mA

    sg3000gx

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current


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    PDF SG3000GXH25 10ms16000 --2500A --3000V 300mA --300A sg3000gx

    SG3000GXH24

    Abstract: Gate Turn-off Thyristor sg3000gxh24
    Text: TO SH IBA SG3000GXH24 T O S H IB A GATE T U R N -O F F THY RISTOR SG3000GXH24 INVERTER APPLICA TION Repetitive Peak Off-State Voltage : V d r m = 4500 V R.M.S On-State Current : It RMS = 1200 A Peak Turn-Off Current : It GQM = 3000 A Critical Rate of Rise of On-State Current : di / dt = 400 A / jus


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    PDF SG3000GXH24 SG3000GXH24 Gate Turn-off Thyristor sg3000gxh24

    4500v

    Abstract: SG3000GXH23G SG3000GXH29
    Text: TOSHIBA TENTATIVE SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage VdRM = 4500V R.M.S On-State Current IT RMS = 1200A Peak Turn-Off Current ItGQM —3000A Critical Rate of Rise of On-State Current : di/dt = 400A/ jus


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    PDF SG3000GXH23G 00A//Â 000V//Â 10ms-Width sg3000gxh29. 4500v SG3000GXH23G SG3000GXH29

    toshiba gto

    Abstract: SG3000GXH23 SG3000GXH29
    Text: TO SH IBA SG3000GXH23 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG3000GXH23 Repetitive Peak Off-State Voltage V d RM = 4500 V R.M.S On-State Current ÏT RMS = 1200 A Peak Turn-Off Current :TGQM = 3000 A Critical Rate of Rise of On-State Current : d i/ dt = 400 A//us


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    PDF SG3000GXH23 toshiba gto SG3000GXH23 SG3000GXH29

    SG3000GXH24

    Abstract: Gate Turn-off Thyristor sg3000gxh24
    Text: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG3000GXH24 DATA S G 3 0 0 0 G XH 2 4 J Unit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : V d rm ;= 4500V R.M.S On-State Current : It (RMS = 1200A Peak Turn-Off Current


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    PDF SG3000GXH24 SG3000GXH24 Gate Turn-off Thyristor sg3000gxh24

    SG3000GXH29

    Abstract: LT10
    Text: TOSHIBA SG3000GXH29 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH29 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d RM —4500V R.M.S On-State Current : It RMS = 1200A Peak Turn-Off Current : It GQM —3000A Critical Rate of Rise of On-State Current : di/dt= 400A / jus


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    PDF SG3000GXH29 SG3000GXH29 LT10

    SG3000GXH25

    Abstract: Gate Turn-off Thyristor
    Text: TO SH IBA TENTATIVE INVERTER APPLICATION SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR S G 3 0 0 0 G X H 25 Unit in mm Repetitive Peak Off-State Voltage : VDRM - 4500 V Note 1 Repetitive Peak Reverse Voltage • VRRM = 4000 V R.M.S On-State Current • lT (RMS) = 800 A


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    PDF SG3000GXH25 900Y//us SG3000GXH25 Gate Turn-off Thyristor

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent


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    PDF SG3000GXH29 SG3000GXH29) SG3000GXH29

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SG3000GXH23 TENTATIVE TOSHIBA GATE TURN-OFF THYRISTOR < ;r ;3 n n n r ; Y H 73 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V R.M.S On-State Current ÌT RMS = 1200A Peak Turn-Off Current ITGQM —3000A Critical Rate of Rise of On-State Current : d i/d t = 400A /(lus


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    PDF SG3000GXH23 --3000A 1250C --24V, 3000Ai 450QV, SG3000GXH29.

    SG3000GXH24

    Abstract: GP-850 QA3000
    Text: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG3000GXH24 DATA SG3000GXH24 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current : It GQM = 3000A


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    PDF SG3000GXH24 SG3000GXH24) SG3000GXH24 GP-850 QA3000

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SG3000GXH23 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG3000GXH23 Unit in mm Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A i T G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us


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    PDF SG3000GXH23 000V// --25A, ITGQ-3000A, SG3000GXH29.

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG3000GXH24 DATA SG3000GXH24 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current : It GQM = 3000A


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    PDF SG3000GXH24 SG3000GXH24) SG3000GXH24

    SG3000GXH29

    Abstract: No abstract text available
    Text: SEMICONDUCTOR T O SH IB A TECHNICAL TOSHIBA GATE TURN-OFF THYRISTOR. SG3000GXH29 DATA S G 3 0 0 0 G XH 2 9 J Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm ;= 4500V R.M.S On-State Current : It (RMS = 1200A Peak Turn-Off Current


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    PDF SG3000GXH29 SG3000GXH29

    sm4500

    Abstract: Gate Turn-off Thyristor sg3000gxh24 SG3000GXH24
    Text: SG3000GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH24 SG3000GXH24 Unit in mm INVERTER APPLICATION RepetiUve Peak Off-State Voltage : 4500V R.M.S On-State Current : I t (R M S ) = 1200A Peak Turn-Off Current : I t GQM = 3000A Critical Rate of Rise of On-State Current : d i/d t= 4 0 0 A ///s


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    PDF SG3000GXH24 SG3000GXH24) sm4500 Gate Turn-off Thyristor sg3000gxh24 SG3000GXH24

    TOSHIBA FL INVERTER

    Abstract: SG3000GXH23 n42a
    Text: TO SHIBA TENTATIVE SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR SG3QQ0GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V R.M.S On-State Current 1T RMS = 1200A Peak Turn-Off Current ITGQM —3000A Critical Rate of Rise of On-State Current : d i/d t = 400A /(lus


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    PDF SG3000GXH23G SG3QQ0GXH23G --3000A --24V, 3000Ai Tj--125 30Q0V, SG3000GXH29. TOSHIBA FL INVERTER SG3000GXH23 n42a

    snubber diode

    Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
    Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11


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    PDF SG600GXH26 SG800W24 SG1000GXH26 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2000GXH26 SG2200GXH24 SG2500EX24 snubber diode SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G

    500EXH21

    Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
    Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that


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    PDF SG1200EX24 SG1500EX24 SG2000EX24 SG2200GXH24 SG3000EX24 SG3000GXH24 SG3000JX24 SG2000GXH26 SG800GXH24 SG1000GXH26 500EXH21 100gxhh21 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX

    100EXG11

    Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
    Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26


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    PDF SG2500EX24 SG3000EX24 SG4000EX26 SG2000R24 SG2000U24 SG2000W24 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 100EXG11 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v

    gate turn off thyristors

    Abstract: 500EXH21 800gxhh21 800exh21
    Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that


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    PDF 1SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2200GXH24 SG3000EX24 SGR3000EX26 SG4000EX26 SGR3000GXH26 SG4000GXH26 gate turn off thyristors 500EXH21 800gxhh21 800exh21