Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR T O S H IB A TECHNICAL SG600GXH26 DATA LOW SNUBBER TYPE SG600GXH26 Unit in mm INVERTER APPLICATIO N Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current

4a2d

Abstract: MSG60L41 359RGA MSG60U41 108a2 59RF M208 B1 2-109B4A TA8250 59RC
Contextual Info: — H M i j x j M SG60 277 — • ï ÿ z L - ;p 4 I i S « o ttu s i» « o » » É f lt M SG 60G 41- M SG 6 0 L4 1 2000V M SG 60U41 2500V M SG 60N 41- : -0 s3 ± g2 •M SBI r \ •A. /« l^o 1 TX\ fri711 VJ -BS li U - i “ § IS d m 2Q0±Cj.2 \3-(M5X10)

Contextual Info: SG60R4 Schottky TTL • Over 180 LS Devices • ALS • FAST TOTAL TTL COMMITMENT «TOTAL • TTL Compatible Macrocell Arrays • RAMs • PROMs General Information TTL in Perspective proved speed — p o w e r product co m p ared to LS as a result o f ad vanced M O S A IC oxide isolated processing.

snubber diode

Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11

Contextual Info: T O S H IB A G A T E TU R N -O FF T H Y R IST O R SG 6 0 0 G X H 2 6 L O W S N U B B E R TY PE SG600GXH26 SG600GXH26 INVERTER APPLICATION Unit in mm • Repetitive Peak Off-State Voltage Vd RM = 4500V • R.M.S On-State Current lT(RMS) = 300A • Peak Turn-Off Current

SG800R21

Abstract: GTO thyristor 100A, 400V GTO thyristor 5A, 400V
Contextual Info: SG600 J,R 21 SG800(J,R)21 GATE TURN-OFF THYRISTOR SILICON DIFFUSED TYPE C HOP P E R , INVERTER APPLICATION FEATURES: . R e p e t i t i v e Peak O f f - S t a t e V o l t a g e :V d r m = 6 0 0 , 130OV . R e p e t i t i v e Peak R e v e r s e V o l t a g e

Contextual Info: TOSHIBA TENTATIVE INVERTER APPLICATION SG6000JX27 TOSHIBA GATE TURN-OFF THYRISTOR SG6000JX27 Repetitive Peak Off-State Voltage V d RM = 6000V R.M.S On-State Current i T RMS = 2700A Peak Turn-Off Current i T G Q M = 6000A Critical Rate of Rise of On-State Current : d i/d t = 500A / jus

SG6000JX28

Abstract: toshiba gto
Contextual Info: TO SH IBA TENTATIVE INVERTER APPLICATION SG6000JX28 TOSHIBA GATE TURN-OFF THYRISTOR SG6000JX28 Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage

Contextual Info: TO SHIBA SG6000JX27 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE <;r;finnniY? Unit in mm INVERTER APPLICATION • Repetitive Peak Off-State Voltage : VDRM = 6 0 0 0 V a r> • • • • Peak Turn-Off Current Critical Rate of Rise of On-State Current : di /d t = 500A//js

6000v power diode

Abstract: T1250V M6000A toshiba LTM 08 SG6000JX27
Contextual Info: TOSHIBA TENTATIVE INVERTER APPLICATION • • • • • • SG6000JX27 TOSHIBA GATE TURN-OFF THYRISTOR SG6000JX27 Unit in mm Repetitive Peak Off-State Voltage : V d r m ;= 6000V R.M.S On-State Current : It RMS = 2700A Peak Turn-Off Current : I tG Q M = 6000A

SG600GXH26

Abstract: ls025 SG-60 CS-05
Contextual Info: T O S H IB A SG600GXH26 TOSHIBA GATE TURN-OFF THYRISTOR LO W SNUBBER TYPE SG600GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage

100EXG11

Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Contextual Info: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26

SG600GXH26

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG600GXH26 DATA LOW SNUBBER TYPE SG600GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current

Contextual Info: TOSHIBA LOW SN UB B ERTYPE SG600GXH26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: V DRM = 4 5 0 0 V • R.M.S. O n-State Current: h RMS = • Peak Turn-Off Current: 't g q m = 6 0 0 A • Critical Rate of Rise of O n-State Current:

Contextual Info: RS ITEM NO 210-197 APEM ITEM NO SG60BA9A LED/Multiled LED Optimum voltage V 60V Intensity 330mcd Mounting Size 10x25mm Rectifier Bridge Reverse Voltage 80V (max ) Mounting Finish Ba9s AC current - Protection - DC current 6mA ( max ) Mount Holder Ba9s Voltage Tolerance(%)

MSG100L41

Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41

THM408

Abstract: THM324000
Contextual Info: Dynamic RAM Module Capacity Type No. Organiza­ tion 8 M B it TH81070CS/CL-50/AS/AL-60/70/80 1M x8 B M B it THM91070AS/AL-60/70/80 1M x 9 1 6 M B it THM 161000CSG-50/ASG-6CV7CV80 1 M x 16 1 8 M B it TH M 181000ASG-60/7CV80 1 M x 18 THM84000CS/CSG/CL-5Q/AS/ASG/AL-6Q/70/80

msg60l41

Abstract: MSG60Q41 SCR 30A 500V MSG60G MSG60U41A
Contextual Info: SCR MODULE SILICON DIFFUSED TYPE SG60 G,L,Q,U 41 POWER CO NTROL A P P L I C A T I O N S . Unit FEATURES: . Re p e t i t i v e Peak O f f - S t a t e V o l t a g e V d RM =400 ~ 1 6 0 0 V Re p e t i t i v e Peak Reve r s e V o l t a g e Vrrm . A v e r a g e O n - S t a t e Current (Per SCR)

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7402010CS/SG is an 1M x 40 bits D y n am ic RA M M O D U LE w h ich is assembled 20 pieces of 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7402010CS/SG is

TA-NWT-000983

Abstract: Mil-Std-883D SG608 CDX2155 CDX2622 SDX1155 UL-94-VO mil-std 883d method 1010 MILSTD-883D
Contextual Info: Interim Qualification Report 2000 Hours Endurance Reliability Data CDX2155, CDX2622 Summary The CDX2155 and CDX2622 transceivers have been successfully qualified in accordance with the requirements of Bellcore document TA-NWT-000983, under the supervision of HewlettPackard FCO Quality and

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

PT6520

Abstract: PT6520-q CM15 SEG60 SG60
Contextual Info: Tel: 886-2-66296288 Fax: 886-2-29174598 URL: http://www.princeton.com.tw LCD Driver IC PT6520 DESCRIPTION PT6520 is a dot matrix LCD driver IC. The bit addressable display data which is sent from a microcomputer is stored in a build-in display data RAM and generates the LCD signal.

Contextual Info: @ LG Semicon. Co. LTD Features Description The GMM7322200BNS/SG is an 2M x 32 bits Dynamic RAM MODULE which is assembled 4 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board w ith decoupling capacitors. The GMM7322200BNS/SG is

Contextual Info: I» LG Semicon. Co. LTD Description Features The GMM7401000DS/SG is an 1M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 10 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on single side the p rin te d c irc u it board w ith d e co u p lin g