SGP30N60
Abstract: SGP30N60 3 BUP603D
Text: SGP30N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP30N60 600V 30A TO-220 AB Q67040-A . . . . Maximum Ratings
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SGP30N60
O-220
Q67040-A
BUP603D
Apr-08-1998
SGP30N60
SGP30N60 3
BUP603D
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SGP30N60
Abstract: BUP603D Q67040-S4237 SGB30N60 SGW30N60 SGP30N60 3 SC35015
Text: Preliminary data SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:
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SGP30N60,
SGB30N60,
SGW30N60
SGP30N60
O-220AB
Q67041-A4713-A2
SGB30N60
O-263AB
Q67041-A4713-A3
SGP30N60
BUP603D
Q67040-S4237
SGB30N60
SGW30N60
SGP30N60 3
SC35015
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G15N60
Abstract: No abstract text available
Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP30N60
SGW30N60
PG-TO-220-3-1
O-220AB)
PG-TO-247-3-1
O-247AC)
SGW30N60
G15N60
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30A20V
Abstract: Q67040-S4237 SGB30N60 SGP30N60 SGW30N60
Text: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP30N60
SGB30N60,
SGW30N60
O-220AB
Q67041-A4713-A2
SGB30N60
O-263AB
Q67041-A4713-A4
O-247AC
30A20V
Q67040-S4237
SGB30N60
SGP30N60
SGW30N60
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SGP30N60
Abstract: SIGC25T60SNC
Text: SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP30N60 G Applications: • drives Chip Type VCE ICn
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SIGC25T60SNC
SGP30N60
Q67041-A4667A001
Q67041-A4667A002
7262-S,
SGP30N60
SIGC25T60SNC
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G30N60
Abstract: G30N60 IGBT g30n60 infineon SGW30N60 PG-TO-220-3-1 IGBT 400V 100KHZ 30A igbt 600V 30A
Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP30N60
SGW30N60
PG-TO-220-3-1
PG-TO-247-3
SGW30N60
G30N60
G30N60 IGBT
g30n60 infineon
PG-TO-220-3-1
IGBT 400V 100KHZ 30A
igbt 600V 30A
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g30n60
Abstract: equivalent to g30n60 G30N60 IGBT g30n60 infineon 0/equivalent to g30n60 PG-TO-247-3-21
Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP30N60
SGW30N60
PG-TO-220-3-1
PG-TO-247-3-21
SGW30N60
g30n60
equivalent to g30n60
G30N60 IGBT
g30n60 infineon
0/equivalent to g30n60
PG-TO-247-3-21
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G15N60
Abstract: G15N60 IGBT PG-TO-247-3-21
Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP30N60
SGW30N60
PG-TO-220-3-1
PG-TO-247-3-21
SGW30N60
G15N60
G15N60 IGBT
PG-TO-247-3-21
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Q67040-A4463
Abstract: Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60 SGW30N60
Text: SGP30N60 SGB30N60, SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP30N60
SGB30N60,
SGW30N60
O-220AB
Q67040-A4463
SGB30N60
O-263AB
Q67041-A4713
O-247AC
Q67040-A4463
Q67040-S4237
Q67041-A4713
SGB30N60
SGP30N60
SGW30N60
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g30n60
Abstract: PG-TO-220-3-1 G30N60 IGBT PG-TO220-3-1 equivalent to g30n60 PG-TO-247-3-21 SGP30N60 SGW30N60 100W-50W g30n60 data sheet
Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP30N60
SGW30N60
PG-TO-220-3-1
PG-TO-247-3-21
G30N60
PG-TO-220-3-1ain
g30n60
PG-TO-220-3-1
G30N60 IGBT
PG-TO220-3-1
equivalent to g30n60
PG-TO-247-3-21
SGP30N60
SGW30N60
100W-50W
g30n60 data sheet
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7262-S
Abstract: SGP30N60 SIGC25T60SNC
Text: SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP30N60 G Applications: • drives Chip Type VCE ICn
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SIGC25T60SNC
SGP30N60
Q67041-A4667A001
Q67041-A4667A002
7262-S,
7262-S
SGP30N60
SIGC25T60SNC
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Untitled
Abstract: No abstract text available
Text: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP30N60
SGB30N60,
SGW30N60
O-220AB
Q67041-A4713-A2
SGB30N60
O-263AB
Q67041-A4713-A4
O-247AC
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Untitled
Abstract: No abstract text available
Text: SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP30N60 G Applications: • drives Chip Type VCE ICn
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SIGC25T60SNC
SGP30N60
Q67041-A4667A001
Q67041-A4667A002
7262-S,
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7262-S
Abstract: s7262s
Text: Preliminary SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE This chip is used for: • SGP30N60 G Applications: • drives
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SIGC25T60SNC
SGP30N60
SIGC25T60SNC
Q67041-A4667sawn
Q67041-A4667unsawn
7262-S,
7262-S
s7262s
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Q67040-S4237
Abstract: sgw30n60
Text: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP30N60
SGB30N60,
SGW30N60
SGB30N60
SGW30N60
O-220AB
O-263AB
O-247AC
Q67040-A4463
Q67040-S4237
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PDF
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Q67040-A4463
Abstract: Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60 SGW30N60
Text: SGP30N60, SGB30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP30N60,
SGB30N60
SGW30N60
P-TO-220-3-1
O-220AB)
P-TO-263-3-2
P-TO-247-3-1
O-263AB)
O-247AC)
O-220AB
Q67040-A4463
Q67040-S4237
Q67041-A4713
SGB30N60
SGP30N60
SGW30N60
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SKW30N60
Abstract: 02449 SGP30N60
Text: Preliminary IGBT same as SGP30N60 SKW30N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:
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SGP30N60
SKW30N60
O-247AC
Q67040-S4244
Aug-99
SKW30N60
02449
SGP30N60
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SIPC69N60C3
Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822
Text: File name Products Silicon Carbide Diodes thinQ 300V / 600V SDP06S60 SDP04S60 SDB10S30 SiC_Pspice.zip Smart High Side Switches High-Current PROFET BTS555 BTS550P BTS650P PROFET_Pspice.exe Smart Low Side Switches TEMPFET / Speed TEMPFET HITFET BTS114A BSP78
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SDP06S60
SDP04S60
SDB10S30
BTS555
BTS550P
BTS650P
BTS114A
BSP78
BTS115A
BTS134D
SIPC69N60C3
SPW20N60S5 equivalent
sipc01n80c2
P-Channel Depletion Mosfets
SKP15N60
BUZ78 equivalent
SPNA2N80C2
BUP314
SIPC26N80C3
TDA16822
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IGBT SKW30N60HS
Abstract: igbt 400V 20A dc welding machine circuit diagram igbt welding DATA SHEET OF IGBT IGBT 600v 20a Measurement of stray inductance for IGBT igbt 1200V 20A igbt welding machine IGBT parallel
Text: High Speed IGBT 600V in NPT Technology for Welding Applications S. Cordes, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : NPT Technologie : The key component for power Electronic applications – the power switch - is still a
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10kHz
O-247
TC100
SGP02N60HS
SGP04N60HS
SGP06N60HS
SGP20N60HS
SGW20N60HS
SGP30N60HS
SGW30N60HS
IGBT SKW30N60HS
igbt 400V 20A
dc welding machine circuit diagram
igbt welding
DATA SHEET OF IGBT
IGBT 600v 20a
Measurement of stray inductance for IGBT
igbt 1200V 20A
igbt welding machine
IGBT parallel
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PDF
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2kW flyback PFC
Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Text: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg
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D-90439
D-70499
D-81679
B-1060
N60S5
O-220
OT-223
2kW flyback PFC
transistor SMD DK -RN
SMPS flyback 2kW
UPS SIEMENS
UMAX 450W SMPS
smps 450W
2kw mosfet
PFC 5kw
P-CHANNEL 25A TO-247 POWER MOSFET
siemens soft starter
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PDF
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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SGP30N60
Abstract: No abstract text available
Text: SIEMENS SGP30N60 P relim inary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE h Package Ordering Code SGP30N60 600V 30A T 0 2 2 0 AB Q67040-A . . . . Maximum Ratings Parameter
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OCR Scan
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SGP30N60
SGP30N60
Q67040-A
100//H,
Apr-08-1998
BUP603D
GPT05155
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary data SIEMENS SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:
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OCR Scan
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SGP30N60,
SGB30N60,
SGW30N60
O-220AB
O-263AB
SGP30N60
Q67041-A4713-A2
SGB30N60
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PDF
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IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
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OCR Scan
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bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
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