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    SGSD00036 Search Results

    SGSD00036 Datasheets (1)

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    SGSD00036
    		STMicroelectronics Multiepitaxial MESA Hollow Emitter NPN Transistors Scan PDF

    SGSD00036 Datasheets Context Search

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    SGSD00036

    Abstract: SGSD00037 SGSD00038 SGSD00039 SGSD00040 SGSD00041 Lb 598 d transistor* SGSD00038
    Contextual Info: S G S-THOHSON G7E D I 7121237 GGlflTMB 1 73C 18771 D Z ? - t * SGSD00036/38 SGSD00037/39 SGSD00040/41 MULTIEPITAXIAL MESA HOLLOW EMITTER NPN A D V A N C E D AT A H IGH V O LT A G E FAST SW ITCHING POWER T R A N SIST O R S The SGSD00036 and SGSD00038, the SGSD00037 and SGSD00039, the SGSD00040 and


    OCR Scan     		7121S37 SGSD00036/38 SGSD00037/39 SGSD00040/41, SGSD00036 SGSD00038, SGSD00037 SGSD00039, SGSD00040 SGSD00041, SGSD00038 SGSD00039 SGSD00041 Lb 598 d transistor* SGSD00038 PDF

    BUV48 SE

    Abstract: SGSD00036 kkz 10
    Contextual Info: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous


    OCR Scan     		SGS30MA050D1 250fi SGS30M SGS40TA045D: SGS400T045D O-24Q BUV48 SE SGSD00036 kkz 10 PDF

    kkz 10

    Abstract: BUV48
    Contextual Info: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO­ WER MOS will, in many applications, gradually re­ place power bipolar devices due to the numerous


    OCR Scan     		SGS30MA050D1 SGS40TA045D: S400T045D kkz 10 BUV48 PDF