Contextual Info: 3DE P • 7^ 5 3 7 OQgqflqi S G S -T H O M S O N I Li(g?GMO(gS 4 ■ n _ r 3 <ì - i S s~ T ì ^ hoMSo n — SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS30MA050D1 • • • • • VDSS 500 V ^DS(on 0.20 ß 30 A ISOLATED POWERMOS MODULE

Contextual Info: r= 7 S C S -T H O M S O N M « I[L [I * ( M Û ( g S SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS30MA050D1 • • • • • ^DSS 500 V ^DS(on 0.20 0 *D 30 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE

SGS30MA050D1

Contextual Info: SGS-THOMSON ^ 7 # M g[M i[L[I(gra(Q)Rl(gS SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS R DS(on) SGS30MA050D1 500 V 0.20 • • • • • U 30 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL

ISOWATT220

Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30

sgs*P381

Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Contextual Info: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177

BUV48 SE

Abstract: SGSD00036 kkz 10
Contextual Info: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous

kkz 10

Abstract: BUV48
Contextual Info: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO­ WER MOS will, in many applications, gradually re­ place power bipolar devices due to the numerous

TSD4M450V

Abstract: TSD4M250V IRF740 smd Isotop SGS100MA010D1 SGSP363 TSD4M150V IRF621 IRF621FI IRF622
Contextual Info: Ä 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MMiWICTraOtSS POWER MOS V BR DSS r DS (on) max @ ip Type •d max Ptot (A) c iss max (W) 9fs min (mho) 150 65 400 500 400 40 13 13 20 20 20 1.3 3000 3000 11200 11200 14000 600 (V) (0) (A) 100 100 100 100

ISOWATT220

Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Contextual Info: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00

sgs*P381

Abstract: ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239
Contextual Info: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ^ BR DSS (V ) 50 100 450 500 R DS(on) (max) 3 Type •d (A ) (12) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 TO-220 R DS(on) V(BR)DSS (V) 50 50 50 50 50 50 50 50 50 50 50 50 50 50

TSD4M450V

Abstract: TSD4M250V TSD4M350V TSD4M451V TSD5MG40V SGS100MA010D1 TSD4M351V TSD4M150V SGS30MA050D1 ISOTOP
Contextual Info: Æ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL Ä 7# KitlO [S©IlLi©ra©öiflO Si POWER MODULES ISOTOP: Faston version ISOTOP Standard version TO 240 Internal schematic diagram -+*- 2 3 -O O - 60 POWER MOS IN TO 240 > Type Ip V(BR DSS r DS (on) max (V) (0)

irfp 950

Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Contextual Info: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6

ISOWATT-220

Abstract: mtp15n05 BU210A ISOWATT220
Contextual Info: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00

sgs*P381

Abstract: IRFp150 To3 package bu245a BR 1300
Contextual Info: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50

TSD4M450V

Abstract: SGSP479 SGSP239 tsd4m45 IRF840FI SGSP369 SGSP474 STHV82 TSD4M250V TSD4M351V
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS V BR DSS RDS(on) max (V) <n> 450 450 450 450 450 450 450 450 450 450 450 450 450 450 450 450 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle