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    SHARP DIP4 Search Results

    SHARP DIP4 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TLP241B Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 100 V/2.0 A, 5000 Vrms, DIP4 Visit Toshiba Electronic Devices & Storage Corporation
    TLP223J Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 600 V/0.09 A, 5000 Vrms, DIP4 Visit Toshiba Electronic Devices & Storage Corporation
    TLP223GA Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 400 V/0.12 A, 5000 Vrms, DIP4 Visit Toshiba Electronic Devices & Storage Corporation
    PS2571-1-V-A Renesas Electronics Corporation HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE, DIP4, /Tray Visit Renesas Electronics Corporation

    SHARP DIP4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    microprocessor coffee vending machine

    Abstract: DVD optical pick-up assembly coffee vending machine circuit OPTO switch SHARP sharp cmos IR sensor cmos SENSOR "global shutter" HD sme IGBT optical pickup unit sharp CD DVD 4413 smd triac gate control circuits
    Text: SF/OPTO/1108 Contacts Where to find out more about Sharp’s OPTO-electronic technology? Just contact us and our specialist consultants will be glad to help in any way. Liaison Offices Sharp Microelectronics Europe* SME Paris Office 1 Rue Raoul Follereau Bussy Saint Georges


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    SF/OPTO/1108 microprocessor coffee vending machine DVD optical pick-up assembly coffee vending machine circuit OPTO switch SHARP sharp cmos IR sensor cmos SENSOR "global shutter" HD sme IGBT optical pickup unit sharp CD DVD 4413 smd triac gate control circuits PDF

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 B 8 V 8M Mask ROM Model No.: LHMB8Vxx Spec No.: EL099187 Issue Date: November 6, 1997 D SHARP LH53B8V00D •Handle this docuaent carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited


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    EL099187 LH53B8V00D DIP42-P-600 AA855 CV651 PDF

    Untitled

    Abstract: No abstract text available
    Text: SHARP CORP biE ]> LH534P00 • aiao?« ooGiaao ost « s r p j CM O S 4M 512K x 8 / 256K x 16 Mask-Programmable ROM PIN CONNECTIONS FEATURES • • 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) 40-PIN DIP TOP VIEW


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    LH534P00 40-PIN 40-pin, 600-mil 525-mil 44-pin, 48-pin, LH534P00 PDF

    4kx8 static ram ttl

    Abstract: QQ042 lh5921
    Text: SHARP ELEK/ MELEC »IV 2bE D • 61607=18 000423b b « S R P J PRELIMINARY LH5921/LH5922/LH5924 CMOS 32K 4KX8 Dual Port RAM LH5921/LH5922/LH5924 CMOS 32K (4KX8) Dual Port RAM ■ ■ Description The LH5921, LH5922/U and LH5924/U are dual port static RAMs organized as 4KX8 bits that have


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    000423b LH5921/LH5922/LH5924 LH5921, LH5922/U LH5924/U LH5921 LH5922 LH5922U 52-pin 4kx8 static ram ttl QQ042 PDF

    cey marking code

    Abstract: 816P
    Text: SHARP L H 5 3 1 6 P 0 ODD C O N T E N T S 1. General Description P2 2. Features P2 3. Block Diagraa P3 4. Pin Connections P4 5. Pin Description P4 6. Absolute ïaiinna Ratings PS 7. Opwatine Sanges P5 S. B.C. Electrical Characteristics P5 9. À.C. Electrical Characteristics


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    LH6316POODD LH53TNxx CLH5315PQ0DD) 16-bit 001713fl LH5S16 54TYP. 24TTP. DIP42-Ã 616D7T6 cey marking code 816P PDF

    jwu17

    Abstract: No abstract text available
    Text: I P. 24 88. 08. 29. * 17 î17 SHLARP SPEC Ko. E L Q 8 6 1 Q 2 I S S g I: Jwu 17 1396 To - , S P E C I F I CAT I ONS Product Type 16M MAS K ROM LH537NXX Kode I Wo. (L H 5 3 1 6 P Q 0 DP ) ^ Hi is spécifications contains 12 pagfrg including; the cover and appendix.


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    LH537NXX DIP42-M0Ö jwu17 PDF

    Lemo

    Abstract: No abstract text available
    Text: I P. 24 88. 08. 29. * 17 î17 SHLARP SPEC Ko. E L Q 8 6 1 Q 2 I S S g I: Jwu 17 1396 To - , S P E C I F I CAT I ONS Product Type 16M MAS K ROM LH537NXX Kode I Wo. (L H 5 3 1 6 P Q 0 DP ) ^ Hi is spécifications contains 12 pagfrg including; the cover and appendix.


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    LH537NXX LH5S16P00DD DIP42-M0Ö Lemo PDF

    42-PIN

    Abstract: No abstract text available
    Text: CMOS 2 4 M 3 M x 8 MROM FEATURES PIN CONNECTIONS • 3,145,728 x 8 bit organization 42-PIN DIP TOP VIEW • Access time: 150 ns (MAX.) • Supply current: -O p e ra tin g : 65 mA (MAX.) -S ta n d b y : 100[iA(M AX.) • TTL compatible I/O • Three-state output


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    42-PIN 42-pin, 600-mil 42DIP H532400 DIP42-P-600) LH532400D PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH532000B-S FEATURES • Low-power supply: 2.6 to 5.5 V CMOS 2M 256K x 8/128K x 16 3 V-Prive Mask-Program m able ROM • Packages: 40-pin, 600-mil DIP 40-pin, 525-mil SOP 44-pin, 1 0 x 1 0 mm2 QFP 44-pin, 14 x 14 mm2 QFP 48-pin, 1 2 x 1 8 mm2 TSOP (Type I)


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    LH532000B-S 8/128K 40-pin, 600-mil 525-mil 44-pin, 48-pin, LH532000B-S PDF

    code C3J

    Abstract: marking code C3J marking c3j marking code 8hs
    Text: LH53B8600D 8M Mask ROM Model No.: LHMB86xx Spec No.: EL099183 Issue Date: November 6, 1997 LH53B8600D •Handle this docuaent carefully for it contains Material protected by international copyright la». Any reproduction, full or in part, of this material is prohibited


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    LH53B8600D LHMB86xx) EL099183 34TYR 25-tO DIP42-P-600 CV651 code C3J marking code C3J marking c3j marking code 8hs PDF

    sharp lh531

    Abstract: sharp mask rom 40-pin sharp mask rom
    Text: PRELIMINARY L H 5 3 H 1 CMOS 1M 64K x 16 Mask-Programmable ROM FEATURES DESCRIPTION • 65,5 3 6 x 16 bit organization • Access time: 55 ns (M AX.) The LH53H1000 is a high speed mask-programma­ ble ROM organized as 65,536 x 16 bits (1,048,576 bits). It is fabricated using silicon-gate CMOS process tech­


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    LH53H1000 40-pin, 600-m 525-m 40-PIN LH53H1000 LH531--11000 sharp lh531 sharp mask rom 40-pin sharp mask rom PDF

    dl321

    Abstract: No abstract text available
    Text: LH534600 FEATURES • CMOS 4M 512K x 8 / 256K x 16 Mask-Programmable ROM DESCRIPTION 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (MAX.) • Low-power consumption:


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    LH534600 40-pin, 600-mil 525-mil 44-pin, 48-pin, LH534600 40-PIN dl321 PDF

    40-pin EPROM pinout

    Abstract: No abstract text available
    Text: LH53H1000 PRELIMINARY CMOS 1M 64K x 16 Mask Programmable ROM FEATURES • 65,536 x 16 bit organization • Access time: 55 ns (MAX.) • Power consumption: Operating: 660 mW (MAX.) Standby: 440 mW (MAX.) DESCRIPTION The LH53H1000 is a high speed mask programma­


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    LH53H1000 LH53H1000 40-pin, 600-mil 525-mil 40-PIN LH53J-11000 40-pin EPROM pinout PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5316500C FEATURES CMOS 16M 2M x 8/1M x 16 Mask-Programmable ROM PIN CONNECTIONS • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 nW (MAX.)


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    LH5316500C 42-pin, 600-mil 44-pin, 48-pin, 42-PIN LH5316500C PDF

    iz14d

    Abstract: No abstract text available
    Text: C M O S 2 4 M 1 .5 M x 1 6 M R O M FEATURES PIN CONNECTIONS • 1,572,864 x 16 bit organization IO P VIEW 42-PIN DIP - S ta n d b y : 1 0 0 |iA (M A X .) • TTL com patible I/O • Three-state output • Single +5 V Power supply • Static operation • When the address input at both A i 9 and


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    42-PIN 42-pin, 600-mil LH5324C00 42DIP DIP042-P-0600) LH5324C00 DIP42-P-600) iz14d PDF

    sharp mask rom 44-pin

    Abstract: I321D
    Text: LH538500A FEATURES • DESCRIPTION 1,0 48,5 76 x 8 bit organization Byte mode 524 ,288 x 16 bit organization (Word mode) • CMOS 8M (1M x 8 / 512K x 16) Mask-Programmable ROM B YTE input pin selects bit configuration The LH538500A is a mask-programmable ROM


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    LH538500A LH538500A 42-pin, 600-mil DIP42-P-600) 44-pin, QFP44-P-1414) 64-pin, sharp mask rom 44-pin I321D PDF

    sharp mask rom 44-pin

    Abstract: 6 pin Dt3
    Text: LH538500A / FEATURES • 1,048,576 x 8 bit organization (Byte mode 524,288 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration CMOS 8M (1M x 8 / 512K x 16) Mask Programmable ROM DESCRIPTION The LH538500A is a mask programmable ROM


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    LH538500A 42-pin, 600-mil 44-pin, 64-pin, 48-pin, LH538500A sharp mask rom 44-pin 6 pin Dt3 PDF

    sharp mask rom 44-pin

    Abstract: sharp mask rom AE-C17
    Text: LH534000B FEATURES • Memory organization selection: 524,288 x 8 bit byte mode 262,144 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 |aW (MAX.)


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    LH534000B 8/256K 40-pin, 600-mil 525-mil 48-pin, 44-pin, LH534000B sharp mask rom 44-pin sharp mask rom AE-C17 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH534000B-S FEATURES • Low-power supply: 2.6 to 5.5 V • 524,288 x 8 bit organization Byte mode 262,144 x 16 bit organization (Word mode) CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Program m able ROM PIN CONNECTIONS TOP VIEW 40-PIN DIP 40-PIN SOP


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    LH534000B-S 40-pin, 600-mil 525-mil 44-pin, 48-pin, 8/256K 40-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS 24 M 3M 8 MROM PIN CONNECTIONS FEATURES • 3,145,728 x x 8 bit organization 4 2 -P IN D IP T O P • Access time: 150 ns (MAX.) • Supply current: - Operating: 65 mA (MAX.) -S ta n d b y : 10 0 |iA (M A X .) • TTL compatible I/O • Three-state output


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    42-pin, 600-mil LH5324000 42DIP DIP042-P-0600) LH532400 DIP42-P-600) LH532400D PDF

    Untitled

    Abstract: No abstract text available
    Text: LH538500A FEATURES • 1,048,576 x 8 bit organization Byte mode 524,288 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 150 ns (MAX.) CM O S 8M (1M x 8 / 512K x 16) Mask-Programmable ROM DESCRIPTION The LH538500A is a mask-programmable ROM


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    LH538500A 42-pin, 600-mil 44-pin, 64-pin, 48-pin, LH538500A PDF

    A-1435

    Abstract: 538P00-1 8 bit dip switch 538P00-6 iB33AA
    Text: LH538P00 • PIN CONNECTIONS 1,048,576 x 8 bit organization Byte mode 5 2 4 ,2 8 8 x 16 bit organization (Word mode) • • Access time: 120 ns (M AX.) Pow er consumption: Operating: 3 3 0 mW (M AX.) Standby: 550 (M AX.) 42-PIN DIP f a ,8C a Static operation


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    LH538P00 42-pin, 600-m 44-pin, 48-pin, 42-PIN LH538P00 600-mii A-1435 538P00-1 8 bit dip switch 538P00-6 iB33AA PDF

    LH534500A

    Abstract: LH534500
    Text: LH534500A PIN CONNECTIONS FEATURES • • • • CMOS 4M 512K x 8 / 256K x 16 Mask-Programmable ROM Memory organization selection: 524,288 x 8 bit (byte mode) 262,144 x 16 bit (word mode) TOP VIEW 40-PIN DIP 40-PIN SOP 1• i 40 □ A , a 7C 2 39 □ A9


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    LH534500A 40-pin, 600-mil 525-mil 48-pin, 44-pin, 40-PIN LH534500A LH534500 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH5316501 C M O S 16M 2M x 8 / 1M x 16 M a s k -P ro g ra m m a b le ROM FEATURES • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Packages:


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    LH5316501 42-pin, 600-mil 44-pin, LH5316501 16M-bit PDF