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    SI1417EDH Price and Stock

    Vishay Siliconix SI1417EDH-T1-E3

    MOSFET P-CH 12V 2.7A SC70-6
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    DigiKey SI1417EDH-T1-E3 Digi-Reel 1
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    SI1417EDH-T1-E3 Cut Tape
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    Vishay Siliconix SI1417EDH-T1-GE3

    MOSFET P-CH 12V 2.7A SC70-6
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    DigiKey SI1417EDH-T1-GE3 Cut Tape
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    SI1417EDH-T1-GE3 Digi-Reel 1
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    SI1417EDH-T1-GE3 Reel
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    Vishay Intertechnologies SI1441EDH-T1-GE3

    MOSFETs -20V Vds 10V Vgs SC70-6
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    TTI SI1441EDH-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SI1417EDHT1GE3

    P-CHANNEL 12 V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.7A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI1417EDHT1GE3 3,000
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    SI1417EDH Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si1417EDH Vishay Intertechnology P-Channel 12-V (D-S) MOSFET Original PDF
    SI1417EDH Vishay Siliconix P-Channel 12-V (D-S) MOSFET Original PDF
    Si1417EDH SPICE Device Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF
    SI1417EDH-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 2.7A SC70-6 Original PDF
    SI1417EDH-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 2.7A SC-70-6 Original PDF

    SI1417EDH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si1417EDH

    Abstract: s0318
    Text: Si1417EDH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 APPLICATIONS


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    PDF Si1417EDH SC-70 OT-363 SC-70 S-03187--Rev. 05-Mar-01 s0318

    9540 mosfet

    Abstract: 73807 5451 AN609 Si1417EDH 96316
    Text: Si1417EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si1417EDH AN609 01-Mar-06 9540 mosfet 73807 5451 96316

    MARKING BB SOT363

    Abstract: Si1417EDH
    Text: Si1417EDH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 APPLICATIONS


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    PDF Si1417EDH SC-70 OT-363 SC-70 18-Jul-08 MARKING BB SOT363

    Si1417EDH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1417EDH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si1417EDH 03-May-02

    Si1417EDH

    Abstract: Si1417EDH-T1-E3 Si1417EDH-T1-GE3 sot363 ON Marking DS 0935 DIODE
    Text: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition


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    PDF Si1417EDH SC-70 2002/95/EC OT-363 SC-70 Si1417EDH-T1-E3 18-Jul-08 Si1417EDH-T1-GE3 sot363 ON Marking DS 0935 DIODE

    Untitled

    Abstract: No abstract text available
    Text: Si1417EDH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 APPLICATIONS


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    PDF Si1417EDH SC-70 OT-363 SC-70 08-Apr-05

    "leadframe material" DIP 20

    Abstract: MARKING BB SOT363 bb sc70-6
    Text: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition


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    PDF Si1417EDH SC-70 2002/95/EC OT-363 SC-70 Si1417EDH-T1-E3 Si1417EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC "leadframe material" DIP 20 MARKING BB SOT363 bb sc70-6

    bb sc70-6

    Abstract: MARKING BB sc70-6
    Text: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition


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    PDF Si1417EDH SC-70 2002/95/EC OT-363 SC-70 Si1417EDH-T1-E3 Si1417EDH-T1-GE3 11-Mar-11 bb sc70-6 MARKING BB sc70-6

    Si1417EDH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1417EDH Vishay Siliconix P-Channe12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si1417EDH P-Channe12-V S-50151Rev. 07-Feb-05

    Si1417EDH SPICE Device Model

    Abstract: Si1417EDH
    Text: SPICE Device Model Si1417EDH Vishay Siliconix P-Channe12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si1417EDH P-Channe12-V 18-Jul-08 Si1417EDH SPICE Device Model

    Untitled

    Abstract: No abstract text available
    Text: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si1417EDH SC-70 2002/95/EC OT-363 SC-70 Si1417EDH-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si1417EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition


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    PDF Si1417EDH SC-70 2002/95/EC OT-363 SC-70 Si1417EDH-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


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    PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


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    PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    C1608C0G1H151JT

    Abstract: 221-182 C1608C0G1H101JT pc controlled wireless notice board 019 dfn MAX8561 MAX8561EVKIT MAX8562 JMK107BJ225KA VISHAY TOP MARK IC
    Text: 19-2982; Rev 0; 9/03 MAX8561 Evaluation Kit Features ♦ 2.7V to 5.5V Input Voltage Range ♦ 0.6V to 2.5V Adjustable Output Voltage Range ♦ VOUT1 = 1.8V/1.5V at 500mA MAX8561 ♦ VOUT2 = 1.2V at 400mA or Bypass Mode (MAX8562) ♦ 2MHz PWM Switching Frequency (MAX8561)


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    PDF MAX8561 500mA MAX8561) 400mA MAX8562) MAX8561EVKIT C1608X5R0J475K JMK107BJ225KA C1608C0G1H151JT 221-182 C1608C0G1H101JT pc controlled wireless notice board 019 dfn MAX8561EVKIT MAX8562 VISHAY TOP MARK IC