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Vishay Siliconix SI2369DS-T1-GE3 MOSFET P-CH 30V 7.6A TO236
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2369DS-T1-GE3	Reel	51,500		3,000	1 - 10 - 100 - 1000 - 10000 $0.15297	Buy Now
Vishay Siliconix SI2369BDS-T1-GE3 MOSFET P-CH 30V 5.6A/7.5A SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2369BDS-T1-GE3	Cut Tape	17,262		1	1 $0.65 10 $0.399 100 $0.65 1000 $0.17356 10000 $0.17356	Buy Now
	SI2369BDS-T1-GE3	Digi-Reel	17,262		1	1 $0.65 10 $0.399 100 $0.65 1000 $0.17356 10000 $0.17356	Buy Now
	SI2369BDS-T1-GE3	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.10875	Buy Now
New Advantage Corporation	SI2369BDS-T1-GE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.1406	Buy Now
Vishay Siliconix SI2365EDS-T1-GE3 MOSFET P-CH 20V 5.9A TO236
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2365EDS-T1-GE3	Reel	17,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.09049	Buy Now
RS	SI2365EDS-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.179	Get Quote
Chip 1 Exchange	SI2365EDS-T1-GE3		15,600			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI2369DS-T1-BE3 P-CHANNEL 30-V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2369DS-T1-BE3	Digi-Reel	10,453		1	1 $0.66 10 $0.411 100 $0.66 1000 $0.17909 10000 $0.17909	Buy Now
	SI2369DS-T1-BE3	Cut Tape	10,453		1	1 $0.66 10 $0.411 100 $0.66 1000 $0.17909 10000 $0.17909	Buy Now
	SI2369DS-T1-BE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15297	Buy Now
Vishay Siliconix SI2366DS-T1-GE3 MOSFET N-CH 30V 5.8A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2366DS-T1-GE3	Digi-Reel	9,497		1	1 $0.71 10 $0.442 100 $0.71 1000 $0.19392 10000 $0.19392	Buy Now
	SI2366DS-T1-GE3	Cut Tape	9,497		1	1 $0.71 10 $0.442 100 $0.71 1000 $0.19392 10000 $0.19392	Buy Now
	SI2366DS-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.16601	Buy Now
RS	SI2366DS-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.378	Get Quote

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SI236 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
SI2365EDS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.9A TO-236	Original	PDF
SI2366DS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 5.8A SOT-23	Original	PDF
SI2367DS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.8A SOT-23	Original	PDF
SI2369BDS-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 5.6A/7.5A SOT23	Original	PDF
SI2369DS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 7.6A TO-236	Original	PDF
SI236N	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
SI236N	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF

SI236 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
si2366 Abstract: No abstract text available Text: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si2366DS AN609, J2523 4374u 1469m 9180m 0805u 5327u 7530m 0215u si2366	PDF
Untitled Abstract: No abstract text available Text: SI236N Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)15Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)200õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	SI236N	PDF
Untitled Abstract: No abstract text available Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21	Original	Si2367DS O-236 OT-23) 2002/95/EC Si2367DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SI2366DS Abstract: No abstract text available Text: SPICE Device Model Si2366DS Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si2366DS 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si2367DS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	Si2367DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si2365eds Abstract: SI2365EDS-T1-GE3 Text: Si2365EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0320 at VGS = - 4.5 V - 5.9 0.0410 at VGS = - 2.5 V - 5.2 0.0675 at VGS = - 1.8 V - 4.3 a Qg (Typ.) 13.8 nC TO-236 (SOT-23) G APPLICATIONS	Original	Si2365EDS O-236 OT-23) Si2365EDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Marking code H6 Abstract: No abstract text available Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 11-Mar-11 Marking code H6	PDF
Si2367DS Abstract: No abstract text available Text: SPICE Device Model Si2367DS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	Si2367DS 18-Jul-08	PDF
Marking code H6 Abstract: si2366 si23 Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Marking code H6 si2366 si23	PDF
SI2367DS Abstract: No abstract text available Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21	Original	Si2367DS 2002/95/EC O-236 OT-23) Si2367DS-T1-GE3 11-Mar-11	PDF
Si2367DS Abstract: H7 MARKING Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21	Original	Si2367DS O-236 OT-23) 2002/95/EC Si2367DS-T1-GE3 18-Jul-08 H7 MARKING	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si2369DS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C	Original	Si2369DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF

si2367 Abstract: h7 sot23 diode SI2367DS SI236 Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21	Original	Si2367DS 2002/95/EC O-236 OT-23) Si2367DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2367 h7 sot23 diode SI236	PDF
5506 Abstract: AN609 Si2367DS Text: Si2367DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si2367DS AN609, 21-Jul-09 5506 AN609	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si2366DS www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	Si2366DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si2365EDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	Si2365EDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)d VDS (V) RDS(on) (Ω) 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21	Original	Si2367DS O-236 OT-23) 2002/95/EC Si2367DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
SI2369DS Abstract: No abstract text available Text: Si2369DS Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)a	Original	Si2369DS O-236 OT-23) Si2369DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of	Original	SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402	PDF
TIL78 Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C	OCR Scan	NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A	PDF
2SK19GR Abstract: X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001 Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V 2SK19GR X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001	PDF

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SI236 Price and Stock

Vishay Siliconix SI2369DS-T1-GE3

Vishay Siliconix SI2369BDS-T1-GE3

Vishay Siliconix SI2365EDS-T1-GE3

Vishay Siliconix SI2369DS-T1-BE3

Vishay Siliconix SI2366DS-T1-GE3

SI236 Datasheets (7)

SI236 Datasheets Context Search

si2366

Untitled

Untitled

Untitled

SI2366DS

Untitled

si2365eds

Marking code H6

Si2367DS

Marking code H6

SI2367DS

Si2367DS

Untitled

Untitled

si2367

5506

Untitled

Untitled

Untitled

SI2369DS

Arduino Mega2560

Untitled

TIL78

2SK19GR