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    SI3410DV Search Results

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    SI3410DV Price and Stock

    Vishay Siliconix SI3410DV-T1-GE3

    MOSFET N-CH 30V 8A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3410DV-T1-GE3 Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.26512
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    SI3410DV-T1-GE3 Cut Tape 7,770 1
    • 1 $0.8
    • 10 $0.689
    • 100 $0.4772
    • 1000 $0.33936
    • 10000 $0.33936
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    SI3410DV-T1-GE3 Digi-Reel 1
    • 1 $0.8
    • 10 $0.689
    • 100 $0.4772
    • 1000 $0.33936
    • 10000 $0.33936
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    RS SI3410DV-T1-GE3 Bulk 20
    • 1 -
    • 10 -
    • 100 $0.518
    • 1000 $0.466
    • 10000 $0.441
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    Vishay Siliconix SI3410DV-T1-E3

    MOSFET N-CH 30V 8A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3410DV-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.12605
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    Bristol Electronics SI3410DV-T1-E3 553 8
    • 1 -
    • 10 $0.7125
    • 100 $0.4631
    • 1000 $0.228
    • 10000 $0.228
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    Quest Components SI3410DV-T1-E3 442
    • 1 $0.95
    • 10 $0.95
    • 100 $0.475
    • 1000 $0.285
    • 10000 $0.285
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    Vishay Intertechnologies SI3410DV-T1-GE3

    Trans MOSFET N-CH 30V 7.5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3410DV-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI3410DV-T1-GE3 Reel 9,000 20 Weeks 3,000
    • 1 -
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    • 10000 $0.2625
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    Mouser Electronics SI3410DV-T1-GE3 14,397
    • 1 $0.8
    • 10 $0.689
    • 100 $0.478
    • 1000 $0.34
    • 10000 $0.263
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    Newark SI3410DV-T1-GE3 Reel 3,000
    • 1 $0.37
    • 10 $0.37
    • 100 $0.37
    • 1000 $0.37
    • 10000 $0.334
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    SI3410DV-T1-GE3 Cut Tape 5
    • 1 $0.79
    • 10 $0.699
    • 100 $0.477
    • 1000 $0.477
    • 10000 $0.477
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    Quest Components SI3410DV-T1-GE3 400
    • 1 $0.95
    • 10 $0.95
    • 100 $0.475
    • 1000 $0.285
    • 10000 $0.285
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    SI3410DV-T1-GE3 400
    • 1 $0.95
    • 10 $0.95
    • 100 $0.475
    • 1000 $0.285
    • 10000 $0.285
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    TTI SI3410DV-T1-GE3 Reel 9,000 3,000
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    • 10 -
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    • 1000 -
    • 10000 $0.248
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    Avnet Asia SI3410DV-T1-GE3 21 Weeks 3,000
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    EBV Elektronik SI3410DV-T1-GE3 21 Weeks 3,000
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    Vishay Intertechnologies SI3410DV-T1-GE3.

    Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:4.1W; No. Of Pins:6Pins Rohs Compliant: No |Vishay SI3410DV-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI3410DV-T1-GE3. Reel 3,000
    • 1 $0.37
    • 10 $0.37
    • 100 $0.37
    • 1000 $0.37
    • 10000 $0.334
    		Buy Now

    Vishay BLH SI3410DV-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI3410DV-T1-GE3 500 8
    • 1 -
    • 10 $0.7125
    • 100 $0.4631
    • 1000 $0.228
    • 10000 $0.228
    		Buy Now
    Find more SI3410DV price and stock on Findchips.com

    SI3410DV Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI3410DV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6-TSOP Original PDF
    SI3410DV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6-TSOP Original PDF

    SI3410DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Vishay DaTE CODE tsop-6

    Abstract: si3410
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE tsop-6 si3410

    Untitled

    Abstract: No abstract text available
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    A 69254

    Abstract: S7-20
    Text: New Product Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY 30 FEATURES rDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 VDS (V) Qg (Typ) • TrenchFET Power MOSFET 9.2 nC APPLICATIONS RoHS COMPLIANT • Notebook Load Switch


    Original     		PDF Si3410DV Si3410DV-T1-E3 08-Apr-05 A 69254 S7-20

    338 u

    Abstract: AN609
    Text: Si3410DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3410DV AN609 13-Aug-07 338 u

    A 69254

    Abstract: No abstract text available
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 18-Jul-08 A 69254

    S-72077

    Abstract: Si3410DV T12C6F
    Text: SPICE Device Model Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3410DV 18-Jul-08 S-72077 T12C6F

    A 69254

    Abstract: No abstract text available
    Text: New Product Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY 30 FEATURES rDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 VDS (V) Qg (Typ) • TrenchFET Power MOSFET 9.2 nC APPLICATIONS RoHS COMPLIANT • Notebook Load Switch


    Original     		PDF Si3410DV Si3410DV-T1-E3 18-Jul-08 A 69254

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3410DV www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si3410DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836