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    Skyworks Solutions Inc SI3471A-A01-IMR

    SINGLE ETHERNET PORT 90W 802.3BT
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    DigiKey SI3471A-A01-IMR Cut Tape 3,634 1
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    SI3471A-A01-IMR Digi-Reel 3,634 1
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    Arrow Electronics SI3471A-A01-IMR 2,500 12 Weeks 2,500
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    SI3471A-A01-IMR Cut Strips 1,287 12 Weeks 1
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    Richardson RFPD SI3471A-A01-IMR 1
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    Skyworks Solutions Inc SI3471A-A01-IM

    SINGLE ETHERNET PORT 90W 802.3BT
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    DigiKey SI3471A-A01-IM Tray 178 1
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    Skyworks Solutions Inc SI3471-KIT

    EVAL BOARD FOR SI3471
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    DigiKey SI3471-KIT Bulk 26 1
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    Mouser Electronics SI3471-KIT 3
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    Verical SI3471-KIT 3 1
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    Skyworks Solutions Inc SI3471A-A02-IM

    802.3BT SINGLE ETHERNET PORT PSE
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    DigiKey SI3471A-A02-IM Tray 364
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    Verical SI3471A-A02-IM 358 2
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    Arrow Electronics SI3471A-A02-IM 359 12 Weeks 1
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    Skyworks Solutions Inc SI3471A-A02-IMR

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    DigiKey SI3471A-A02-IMR Reel 2,500
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    SI3471 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3471DV Vishay Siliconix MOSFETs Original PDF
    Si3471DV SPICE Device Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF

    SI3471 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A2732

    Abstract: S8175
    Text: SPICE Device Model Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3471CDV 18-Jul-08 A2732 S8175

    1094 m

    Abstract: AN609
    Text: Si3471CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si3471CDV AN609 25-Mar-08 1094 m

    Si3471DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3471DV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3471DV 03-Mar-03

    Untitled

    Abstract: No abstract text available
    Text: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3471CDV 2002/95/EC Si3471CDV-T1-E3 Si3471CDV-T1-GE3 11-Mar-11

    Si3471CDV-T1-E3

    Abstract: No abstract text available
    Text: New Product Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 VDS (V) - 12 0.048 at VGS = - 1.8 V • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)


    Original
    PDF Si3471CDV Si3471CDV-T1-E3 08-Apr-05

    Si3471DV

    Abstract: Si3471DV-T1 Si3471DV-T1-E3
    Text: Si3471DV Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 6.8 0.040 at VGS = - 2.5 V - 6.0 0.053 at VGS = - 1.8 V - 5.2 • TrenchFET Power MOSFET: 1.8-V Rated Pb-free


    Original
    PDF Si3471DV Si3471DV-T1 Si3471DV-T1-E3 S-60422-Rev. 20-Mar-06

    Untitled

    Abstract: No abstract text available
    Text: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3471CDV 2002/95/EC Si3471CDV-T1-E3 Si3471CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3471DV Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 6.8 0.040 at VGS = - 2.5 V - 6.0 0.053 at VGS = - 1.8 V - 5.2 • TrenchFET Power MOSFET: 1.8-V Rated Pb-free


    Original
    PDF Si3471DV Si3471DV-T1 Si3471DV-T1-E3 08-Apr-05

    Si3471DV

    Abstract: Si3471DV-T1-E3 si3471
    Text: Si3471DV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 6.8 0.040 at VGS = - 2.5 V - 6.0 0.053 at VGS = - 1.8 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original
    PDF Si3471DV 2002/95/EC Si3471DV-T1-E3 Si3471DV-T1-GE3 18-Jul-08 si3471

    Si3471CDV-T1-E3

    Abstract: No abstract text available
    Text: New Product Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 VDS (V) - 12 0.048 at VGS = - 1.8 V • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)


    Original
    PDF Si3471CDV Si3471CDV-T1-E3 18-Jul-08

    Si3471DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3471DV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3471DV 18-Jul-08

    Si3471CDV-T1-E3

    Abstract: Si3471DV Si3471DV-T1 Si3471DV-T1-E3 mosfet 23 Tsop-6
    Text: Specification Comparison Vishay Siliconix Si3471CDV vs. Si3471DV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3471CDV-T1-E3 replaces Si3471DV-T1-E3 Si3471CDV-T1-E3 replaces Si3471DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original
    PDF Si3471CDV Si3471DV Si3471CDV-T1-E3 Si3471DV-T1-E3 Si3471DV-T1 05-May-08 mosfet 23 Tsop-6

    Si3471CDV-T1-E3

    Abstract: SI3471CDV 285mm
    Text: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3471CDV 2002/95/EC Si3471CDV-T1-E3 Si3471CDV-T1-GE3 18-Jul-08 285mm

    33-8666

    Abstract: mosfet 4456 AN609 Si3471DV
    Text: Si3471DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si3471DV AN609 13-Mar-07 33-8666 mosfet 4456

    Si3471DV

    Abstract: No abstract text available
    Text: Si3471DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET: 1.8-V Rated rDS(on) (W) ID (A) 0.031 @ VGS = - 4.5 V - 6.8 0.040 @ VGS = - 2.5 V - 6.0 0.053 @ VGS = - 1.8 V - 5.2 APPLICATIONS


    Original
    PDF Si3471DV S-03183--Rev. 17-Feb-03

    Untitled

    Abstract: No abstract text available
    Text: Si3471DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET: 1.8-V Rated rDS(on) (W) ID (A) 0.031 @ VGS = - 4.5 V - 6.8 0.040 @ VGS = - 2.5 V - 6.0 0.053 @ VGS = - 1.8 V - 5.2 APPLICATIONS


    Original
    PDF Si3471DV 08-Apr-05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original
    PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original
    PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original
    PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250