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Vishay Siliconix SI3909DV-T1-E3 MOSFET 2P-CH 20V 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3909DV-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.3076	Buy Now
Vishay Siliconix SI3909DV-T1-GE3 MOSFET 2P-CH 20V 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3909DV-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.3076	Buy Now

SI3909DV Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si3909DV		Unknown	Metal oxide P-channel FET, Enhancement Type		Original	PDF
Si3909DV		Vishay Intertechnology	Dual P-Channel 20-V (D-S) MOSFET		Original	PDF
SI3909DV		Vishay Siliconix	MOSFETs		Original	PDF
Si3909DV SPICE Device Model		Vishay	Dual P-Channel 20-V (D-S) MOSFET		Original	PDF
SI3909DV-T1		Vishay Intertechnology	Dual P-Channel 20-V (D-S) MOSFET		Original	PDF
SI3909DV-T1-E3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 6TSOP		Original	PDF
SI3909DV-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 6TSOP		Original	PDF

SI3909DV Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si3909DV Abstract: No abstract text available Text: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si3909DV 2002/95/EC Si3909DV-T1-E3 Si3909DV-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si3909DV 2002/95/EC Si3909DV-T1-E3 Si3909DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si3909DV Abstract: No abstract text available Text: Si3909DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.200 @ VGS = –4.5 V "1.8 –20 20 0.235 @ VGS = –3.6 V "1.6 0.340 @ VGS = –2.5 V "1.3 S1 S2 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4	Original	Si3909DV S-61830--Rev. 23-Aug-99	PDF
Si3909DV Abstract: No abstract text available Text: SPICE Device Model Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3909DV 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si3909DV 2002/95/EC Si3909DV-T1-E3 Si3909DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si3909DV Abstract: No abstract text available Text: Si3909DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.200 @ VGS = –4.5 V "1.8 –20 20 0.235 @ VGS = –3.6 V "1.6 0.340 @ VGS = –2.5 V "1.3 S1 S2 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4	Original	Si3909DV 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si3909DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.200 @ VGS = –4.5 V "1.8 –20 20 0.235 @ VGS = –3.6 V "1.6 0.340 @ VGS = –2.5 V "1.3 S1 S2 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4	Original	Si3909DV 08-Apr-05	PDF
Si3909DV Abstract: No abstract text available Text: SPICE Device Model Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3909DV S-50836 16-May-05	PDF
Si3909DV Abstract: No abstract text available Text: SPICE Device Model Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3909DV 09-Apr-03	PDF
MOSFET 4407 Abstract: 4407 4407 mosfet 9434 74812 4507 mosfet 0624 CIRCUIT 4407 AN609 Si3909DV Text: Si3909DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si3909DV AN609 19-Jul-07 MOSFET 4407 4407 4407 mosfet 9434 74812 4507 mosfet 0624 CIRCUIT 4407	PDF
61830 Abstract: No abstract text available Text: Si3909DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.200 @ VGS = –4.5 V "1.8 0.235 @ VGS = –3.6 V "1.6 0.340 @ VGS = –2.5 V "1.3 S1 S2 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4	Original	Si3909DV S-61830--Rev. 23-Aug-99 61830	PDF
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05	PDF
Siliconix Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123	Original	2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent	PDF
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8	PDF