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    SI4166DY Price and Stock

    Vishay Siliconix SI4166DY-T1-GE3

    MOSFET N-CH 30V 30.5A 8SO
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    DigiKey SI4166DY-T1-GE3 Digi-Reel 7,780 1
    • 1 $2
    • 10 $1.276
    • 100 $2
    • 1000 $0.62746
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    SI4166DY-T1-GE3 Cut Tape 7,780 1
    • 1 $2
    • 10 $1.276
    • 100 $2
    • 1000 $0.62746
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    SI4166DY-T1-GE3 Reel 5,000 2,500
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    • 10000 $0.56572
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    Vishay Intertechnologies SI4166DY-T1-GE3

    Trans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4166DY-T1-GE3)
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    Avnet Americas SI4166DY-T1-GE3 Reel 16 Weeks 2,500
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    Mouser Electronics SI4166DY-T1-GE3 3,212
    • 1 $1.02
    • 10 $0.935
    • 100 $0.722
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    Verical SI4166DY-T1-GE3 2,500 2,500
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    SI4166DY-T1-GE3 1,720 13
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    Arrow Electronics SI4166DY-T1-GE3 2,500 63 Weeks 2,500
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    SI4166DY-T1-GE3 Cut Strips 1,720 16 Weeks 1
    • 1 $0.5549
    • 10 $0.5419
    • 100 $0.5012
    • 1000 $0.4754
    • 10000 $0.4754
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    Newark SI4166DY-T1-GE3 Bulk 168 1
    • 1 $1.13
    • 10 $1.13
    • 100 $0.744
    • 1000 $0.457
    • 10000 $0.399
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    Bristol Electronics SI4166DY-T1-GE3 2,418
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    Avnet Asia SI4166DY-T1-GE3 18 Weeks 2,500
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    EBV Elektronik SI4166DY-T1-GE3 17 Weeks 2,500
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    Others SI4166DY

    AVAILABLE EU
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    ComSIT USA SI4166DY 1,875
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    SI4166DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4166DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30.5A 8-SOIC Original PDF

    SI4166DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4166DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0039 at VGS = 10 V 30.5 0.0055 at VGS = 4.5 V 25.6 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    Si4166DY Si4166DY-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4166DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si4166DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si4166DY-T1-GE3

    Abstract: si4166
    Text: New Product Si4166DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0039 at VGS = 10 V 30.5 0.0055 at VGS = 4.5 V 25.6 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    Si4166DY Si4166DY-T1-GE3 11-Mar-11 si4166 PDF

    4515 n

    Abstract: 334 mosfet AN609
    Text: Si4166DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    Si4166DY AN609, 02-Oct-08 4515 n 334 mosfet AN609 PDF

    Si4166DY

    Abstract: No abstract text available
    Text: New Product Si4166DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0039 at VGS = 10 V 30.5 0.0055 at VGS = 4.5 V 25.6 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    Si4166DY Si4166DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4166DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0039 at VGS = 10 V 30.5 0.0055 at VGS = 4.5 V 25.6 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    Si4166DY Si4166DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    S-8237

    Abstract: Si4166DY 82379
    Text: SPICE Device Model Si4166DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    Si4166DY 18-Jul-08 S-8237 82379 PDF

    SI4166DY-T1-GE3

    Abstract: No abstract text available
    Text: New Product Si4166DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0039 at VGS = 10 V 30.5 0.0055 at VGS = 4.5 V 25.6 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    Si4166DY Si4166DY-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4166DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0039 at VGS = 10 V 30.5 0.0055 at VGS = 4.5 V 25.6 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    Si4166DY Si4166DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Untitled

    Abstract: No abstract text available
    Text: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy


    Original
    1N4148WS-V 500mA BAT54A-V 200mA; OT-23 BAT54W-V OD123 BAV99-V OD-323 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original
    Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF