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Vishay Siliconix SI4409DY-T1-E3 MOSFET P-CH 150V 1.3A 8SO
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Vishay Siliconix SI4409DY-T1-GE3 MOSFET P-CH 150V 1.3A 8SO
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	SI4409DY-T1-GE3	Digi-Reel			1	1 $0.97 10 $0.97 100 $0.97 1000 $0.97 10000 $0.97	Buy Now
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SI4409 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4409DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 1.3A 8-SOIC		Original	PDF
SI4409DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 1.3A 8-SOIC		Original	PDF

SI4409 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested	Original	Si4409DY Si4409DY-T1-E3 Si4409DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
si4409 Abstract: SI4409DY-T1-E3 Text: New Product Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 rDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.8 nC COMPLIANT	Original	Si4409DY Si4409DY-T1-E3 08-Apr-05 si4409	PDF
si4409 Abstract: Si4409DY Text: SPICE Device Model Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4409DY S-71389Rev. 16-Jul-07 si4409	PDF
Untitled Abstract: No abstract text available Text: Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested	Original	Si4409DY Si4409DY-T1-E3 Si4409DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
AN609 Abstract: No abstract text available Text: Si4409DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4409DY AN609 21-Jun-07	PDF
si4409 Abstract: Si4409DY-T1-GE3 Si4409DY Text: Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested	Original	Si4409DY Si4409DY-T1-E3 Si4409DY-T1-GE3 18-Jul-08 si4409	PDF
si4409 Abstract: No abstract text available Text: Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested	Original	Si4409DY Si4409DY-T1-E3 Si4409DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4409	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4409DY 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested	Original	Si4409DY Si4409DY-T1-E3 Si4409DY-T1-GE3 11-Mar-11	PDF
si4409 Abstract: Si4409DY SI4409DY-T1-E3 Text: New Product Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 rDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.8 nC COMPLIANT	Original	Si4409DY Si4409DY-T1-E3 18-Jul-08 si4409	PDF
BS250KL Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF