SI4433DY-T1
Abstract: Si4433DY
Text: Si4433DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.9 0.160 @ VGS = −2.5 V −3.2 0.240 @ VGS = −1.8 V −2.6 D TrenchFETr Power MOSFET D Fast Switching D 100% Rg Tested
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Si4433DY
Si4433DY---E3
Si4433DYT1
Si4433DY-T1--E3
18-Jul-08
SI4433DY-T1
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Si4433DY
Abstract: Si4433DY-T1 Si44
Text: Si4433DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.110 @ VGS = - 4.5 V - 3.9 0.160 @ VGS = - 2.5 V - 3.2 0.240 @ VGS = - 1.8 V - 2.6 D TrenchFETr Power MOSFET D Fast Switching D 100% Rg Tested
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Si4433DY
Si4433DY-T1
S-31726--Rev.
18-Aug-03
Si44
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Untitled
Abstract: No abstract text available
Text: Si4433DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.9 0.160 @ VGS = −2.5 V −3.2 0.240 @ VGS = −1.8 V −2.6 D TrenchFETr Power MOSFET D Fast Switching D 100% Rg Tested
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Si4433DY
Si4433DY---E3
Si4433DYT1
Si4433DY-T1--E3
S-40932--Rev.
17-May-04
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Untitled
Abstract: No abstract text available
Text: Si4433DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.9 0.160 @ VGS = −2.5 V −3.2 0.240 @ VGS = −1.8 V −2.6 D TrenchFETr Power MOSFET D Fast Switching D 100% Rg Tested
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Original
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PDF
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Si4433DY
Si4433DY---E3
Si4433DYT1
Si4433DY-T1--E3
08-Apr-05
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