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    SI4465 Price and Stock

    Vishay Siliconix SI4465ADY-T1-GE3

    MOSFET P-CH 8V 8SOIC
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    DigiKey SI4465ADY-T1-GE3 Cut Tape 2,116 1
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    SI4465ADY-T1-GE3 Digi-Reel 2,116 1
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    SI4465ADY-T1-GE3 Reel 2,500
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    New Advantage Corporation SI4465ADY-T1-GE3 5,000 1
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    Vishay Siliconix SI4465ADY-T1-E3

    MOSFET P-CH 8V 8SOIC
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    DigiKey SI4465ADY-T1-E3 Cut Tape 1,526 1
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    SI4465ADY-T1-E3 Digi-Reel 1,526 1
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    SI4465ADY-T1-E3 Reel 2,500
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    Vishay Intertechnologies SI4465ADY-T1-GE3

    Trans MOSFET P-CH 8V 20A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4465ADY-T1-GE3)
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    Avnet Americas SI4465ADY-T1-GE3 Reel 2,500
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    Verical SI4465ADY-T1-GE3 25,000 2,500
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    SI4465ADY-T1-GE3 4,192 82
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    SI4465ADY-T1-GE3 2,123 8
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    Arrow Electronics SI4465ADY-T1-GE3 25,000 13 Weeks 2,500
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    SI4465ADY-T1-GE3 Cut Strips 2,123 13 Weeks 1
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    Newark SI4465ADY-T1-GE3 Reel 2,500
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    SI4465ADY-T1-GE3 Cut Tape 2,500
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    Bristol Electronics SI4465ADY-T1-GE3 2,500
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    Quest Components SI4465ADY-T1-GE3 2,000
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    SI4465ADY-T1-GE3 1,432
    • 1 $3.396
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    TTI SI4465ADY-T1-GE3 Reel 2,500
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    Chip1Stop SI4465ADY-T1-GE3 Cut Tape 4,192
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    EBV Elektronik SI4465ADY-T1-GE3 14 Weeks 2,500
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    Vishay Intertechnologies SI4465ADY-T1-E3

    Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R
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    Arrow Electronics SI4465ADY-T1-E3 Cut Strips 7 9 Weeks 1
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    Newark SI4465ADY-T1-E3 Cut Tape 24 1
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    SI4465ADY-T1-E3 Reel 2,500
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    Bristol Electronics SI4465ADY-T1-E3 900
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    TTI SI4465ADY-T1-E3 Reel 5,000 2,500
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    Chip Stock SI4465ADY-T1-E3 1,211
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    Vishay Siliconix SI4465DY-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4465DY-T1 1,713
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    Find more SI4465 price and stock on Findchips.com

    SI4465 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4465ADY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 8SOIC Original PDF
    SI4465ADY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 8SOIC Original PDF
    Si4465DY Unknown Metal oxide P-channel FET, Enhancement Type Original PDF
    Si4465DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4465DY Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    Si4465DY SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4465DY-T1 Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF

    SI4465 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74681

    Abstract: 7815 7815 DATASHEET M 1357 AN609 Si4465ADY
    Text: Si4465ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4465ADY AN609 08-May-07 74681 7815 7815 DATASHEET M 1357

    Si4465ADY

    Abstract: 73856
    Text: Si4465ADY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ) 55 nC FEATURES • TrenchFET Power MOSFET


    Original     		PDF Si4465ADY Si4465ADY-T1-E3 08-Apr-05 73856

    Untitled

    Abstract: No abstract text available
    Text: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4465ADY Si4465ADY-T1-E3 Si4465ADY-T1-GE3 11-Mar-11

    Si4465DY

    Abstract: Si4465DY SPICE Device Model
    Text: SPICE Device Model Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4465DY 07-May-01 Si4465DY SPICE Device Model

    Untitled

    Abstract: No abstract text available
    Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V –14 0.011 @ VGS = –2.5 V –12 0.016 @ VGS = –1.8 V –10 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4465DY-T1


    Original     		PDF Si4465DY Si4465DY-T1 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4465ADY Si4465ADY-T1-E3 Si4465ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4465ADY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ) 55 nC FEATURES • TrenchFET Power MOSFET


    Original     		PDF Si4465ADY Si4465ADY-T1-E3 18-Jul-08

    Si4465ADY

    Abstract: No abstract text available
    Text: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4465ADY Si4465ADY-T1-E3 Si4465ADY-T1-GE3 11-Mar-11

    SI4465AD

    Abstract: No abstract text available
    Text: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4465ADY Si4465ADY-T1-E3 Si4465ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4465AD

    74100

    Abstract: 74100 datasheet AN609 Si4465DY
    Text: Si4465DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4465DY AN609 01-Sep-05 74100 74100 datasheet

    74278

    Abstract: Si4465DY Si4465ADY Si4465DY-T1 SI4465ADY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4465ADY vs. Si4465DY Description: Package: Pin Out: P-Channel, 1.8 V G-S MOSFET SO-8 Identical Part Number Replacements Si4465ADY-T1-E3 Replaces Si4465DY-T1-E3 Si4465ADY-T1-E3 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4465ADY Si4465DY Si4465ADY-T1-E3 Si4465DY-T1-E3 Si4465DY-T1 31-Oct-06 74278

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4465ADY www.vishay.com Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4465ADY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4465DY

    Abstract: Si4465DY-T1
    Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.009 @ VGS = - 4.5 V - 14 0.011 @ VGS = - 2.5 V - 12 0.016 @ VGS = - 1.8 V - 10 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4465DY


    Original     		PDF Si4465DY Si4465DY-T1 S-31989--Rev. 13-Oct-03

    Untitled

    Abstract: No abstract text available
    Text: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4465ADY Si4465ADY-T1-E3 Si4465ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4465DY

    Abstract: Si4465DY-T1
    Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V –14 0.011 @ VGS = –2.5 V –12 0.016 @ VGS = –1.8 V –10 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4465DY-T1


    Original     		PDF Si4465DY Si4465DY-T1 18-Jul-08

    74239

    Abstract: Si4451DY Si4451DY-T1 Si4451DY-T1-E3 Si4465DY Si4465DY-T1
    Text: Specification Comparison Vishay Siliconix Si4451DY vs. Si4465DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4465DY-T1-E3 Si4451DY-T1 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4451DY Si4465DY Si4451DY-T1-E3 Si4465DY-T1-E3 Si4451DY-T1 Si4465DY-T1 31-Oct-06 74239

    Si4465DY

    Abstract: No abstract text available
    Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V "14 0.011 @ VGS = –2.5 V "12 0.016 @ VGS = –1.8 V "10 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original     		PDF Si4465DY S-59620--Rev. 12-Oct-98

    Si4465ADY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4465ADY 18-Jul-08

    74212

    Abstract: Si4465ADY
    Text: SPICE Device Model Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4465ADY S-61686Rev. 01-Jan-07 74212

    CMZ59448

    Abstract: LTBSZ ltbnd diode G21 2A 100v LTC6101HV LTC2433-1 LTC6101 DC 5V to DC 100V CIRCUIT DIAGRAM 6101fa
    Text: LTC6101/LTC6101HV High Voltage, High-Side Current Sense Amplifier in SOT-23 U FEATURES DESCRIPTIO • The LTC 6101/LTC6101HV are versatile, high voltage, high side current sense amplifiers. Design flexibility is provided by the excellent device characteristics; 300µV Max offset


    Original     		PDF LTC6101/LTC6101HV OT-23 6101/LTC6101HV LTC6101 LTC6101HV LTC6101HV) LTC6101) LT1991 LTC2050/LTC2051/ LTC2052 CMZ59448 LTBSZ ltbnd diode G21 2A 100v LTC2433-1 DC 5V to DC 100V CIRCUIT DIAGRAM 6101fa

    DIODE 22B4

    Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
    Text: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams


    Original     		PDF BA92-01774A BA41-# 400MHZ 512MBYTE 66MHZ MAP31 68ohm 3000mA 012ohm DIODE 22B4 BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4

    LEXAN 121r - 21051

    Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
    Text: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F


    Original     		PDF BA31-00024A BA39-00474A BA39-00493A S/80GB WLAN-802 L50000 L35mm L228mm LEXAN 121r - 21051 lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A

    T0252AA

    Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y


    OCR Scan     		PDF SI4465DY SI4965DY IRF7204 IRF7304 SI4963DY SI9430DY SI9435DY SI9933ADY SI9953DY IRF7205 T0252AA T0263 BSS83 IRFR5305 T0-220AB

    Untitled

    Abstract: No abstract text available
    Text: SÌ4465PY Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product v 0# m -8 r d s (ON) fQJ 0.009 9 Vqs = -4 -5 V ±1 4 0.011 9 Vqs = —2.5 V ±12 0.016 9 VGS = -1 .8 V ±1 0 9 ° \* A til SO-8 "It rm P-Channel MOSFET A B S O L U T E M A X I M U M R A T IN G S | T a


    OCR Scan     		PDF 4465PY S-59620-- 12-Oct-98 988-800X3