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    SI4465DY Price and Stock

    Vishay Siliconix SI4465DY-T1

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    Bristol Electronics SI4465DY-T1 1,713
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    Vishay Intertechnologies SI4465DY-T1

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    Bristol Electronics SI4465DY-T1 354
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    Synergy Semiconductor Corp SI4465DY

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    Bristol Electronics SI4465DY 56
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    VISHAY SILIC SI4465DY

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    Bristol Electronics SI4465DY 33
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    Vishay Intertechnologies SI4465DY

    TRANSISTOR,MOSFET,P-CHANNEL,8V V(BR)DSS,14A I(D),SO
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    Quest Components SI4465DY 130
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    Find more SI4465DY price and stock on Findchips.com

    SI4465DY Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4465DY Unknown Metal oxide P-channel FET, Enhancement Type Original PDF
    Si4465DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4465DY Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    Si4465DY SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4465DY-T1 Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF

    SI4465DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si4465DY

    Abstract: Si4465DY SPICE Device Model
    Text: SPICE Device Model Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4465DY 07-May-01 Si4465DY SPICE Device Model PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V –14 0.011 @ VGS = –2.5 V –12 0.016 @ VGS = –1.8 V –10 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4465DY-T1


    Original     		Si4465DY Si4465DY-T1 08-Apr-05 PDF

    74100

    Abstract: 74100 datasheet AN609 Si4465DY
    Text: Si4465DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4465DY AN609 01-Sep-05 74100 74100 datasheet PDF

    74278

    Abstract: Si4465DY Si4465ADY Si4465DY-T1 SI4465ADY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4465ADY vs. Si4465DY Description: Package: Pin Out: P-Channel, 1.8 V G-S MOSFET SO-8 Identical Part Number Replacements Si4465ADY-T1-E3 Replaces Si4465DY-T1-E3 Si4465ADY-T1-E3 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si4465ADY Si4465DY Si4465ADY-T1-E3 Si4465DY-T1-E3 Si4465DY-T1 31-Oct-06 74278 PDF

    Si4465DY

    Abstract: Si4465DY-T1
    Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.009 @ VGS = - 4.5 V - 14 0.011 @ VGS = - 2.5 V - 12 0.016 @ VGS = - 1.8 V - 10 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4465DY


    Original     		Si4465DY Si4465DY-T1 S-31989--Rev. 13-Oct-03 PDF

    Si4465DY

    Abstract: Si4465DY-T1
    Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V –14 0.011 @ VGS = –2.5 V –12 0.016 @ VGS = –1.8 V –10 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4465DY-T1


    Original     		Si4465DY Si4465DY-T1 18-Jul-08 PDF

    74239

    Abstract: Si4451DY Si4451DY-T1 Si4451DY-T1-E3 Si4465DY Si4465DY-T1
    Text: Specification Comparison Vishay Siliconix Si4451DY vs. Si4465DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4465DY-T1-E3 Si4451DY-T1 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si4451DY Si4465DY Si4451DY-T1-E3 Si4465DY-T1-E3 Si4451DY-T1 Si4465DY-T1 31-Oct-06 74239 PDF

    Si4465DY

    Abstract: No abstract text available
    Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V "14 0.011 @ VGS = –2.5 V "12 0.016 @ VGS = –1.8 V "10 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original     		Si4465DY S-59620--Rev. 12-Oct-98 PDF

    DIODE 22B4

    Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
    Text: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams


    Original     		BA92-01774A BA41-# 400MHZ 512MBYTE 66MHZ MAP31 68ohm 3000mA 012ohm DIODE 22B4 BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4 PDF

    LEXAN 121r - 21051

    Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
    Text: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F


    Original     		BA31-00024A BA39-00474A BA39-00493A S/80GB WLAN-802 L50000 L35mm L228mm LEXAN 121r - 21051 lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A PDF

    AR5212

    Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
    Text: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)


    Original     		ISL6225VCC AR5212 ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516 PDF

    smd code wKX

    Abstract: samsung nc110 samsung nc108 AR5112 TP2322 ELM7S08WS TP2320 smd zG sot 23 TP2323 GND194
    Text: [ Z zhtz|unGwyvwypl{hy€ Y X {opzGkvj|tlu{Gjvu{hpuzGjvumpklu{phs wyvwypl{hy€Gpumvyth{pvuG{oh{Gpz zhtz|unGlslj{yvupjzGjvNzGwyvwly{€U kvGuv{GkpzjsvzlG{vGvyGk|wspjh{lGmvyGv{olyz ljlw{GhzGh|{ovyplkGi€Gzhtz|unU k k jpjospk j i jw|GGGGGGaG ihuphzVkv{ohu j—GzŒ›GaG tjoTtGvkltR


    Original     		wziG2893-3017F ELM7S08WS 100nF MMBD41 PGB001 smd code wKX samsung nc110 samsung nc108 AR5112 TP2322 ELM7S08WS TP2320 smd zG sot 23 TP2323 GND194 PDF

    ST T4 D560

    Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom


    Original     		YONAH667 Sheet18. Sheet19. Sheet20 Sheet24. Sheet25 Sheet29. Sheet30 Sheet32. Sheet33. ST T4 D560 ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4 PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 PDF

    CDBM c28

    Abstract: U93 QUANTA QUANTA U93 AIC-7899W BC-1072 BC1008 R6549 GEVENT12 24X4 C1152
    Text: 4 B CLK Gem A C D E 100MHz-CPU/GCLE/ITP 33MHz-PCI Ref 48MHz-USB/SIO 4 Y2 14.318MHz X-BUS FLASH Foster/ Prestonia CPU Foster/ Prestonia CPU USB BMC CPU BUS SP SIO 414 PP BW: 200MB/s 200MHz 100MHz x 2 LPC BUS MEMORY I/F CSB5 Y5 RAGE XL Y3 3 FLPY 400MHz(100MHz x 4)


    Original     		100MHz-CPU/GCLE/ITP 33MHz-PCI 48MHz-USB/SIO 318MHz 768MHz 200MB/s 200MHz 100MHz 400MHz CDBM c28 U93 QUANTA QUANTA U93 AIC-7899W BC-1072 BC1008 R6549 GEVENT12 24X4 C1152 PDF

    SUS304-CSP

    Abstract: lcd 94vo SLD9630TT BCM5788MKFB samsung ba92 LTN154x3 BA99 LTN154X3-L03 PC-GF10 SUS304CSP
    Text: This Document can not be used without Samsung’s authorization. 4 Explorded View and Mechanical Parts List 4-1 X-50 15.4” LCD SENS X-50 (15.4” LCD Explorded View) 4-1 4 This Document can not be used without Samsung’s authorization. 4-2 X-50 15.4” LCD


    Original     		NP-X50C001/SHK BA75-01514B BA81-01005B BA70-00584A PLATE-MAGNE50-EHQ BA99-08083A NP-X50-EHQ BA99-08084A BA99-08086A SUS304-CSP lcd 94vo SLD9630TT BCM5788MKFB samsung ba92 LTN154x3 BA99 LTN154X3-L03 PC-GF10 SUS304CSP PDF

    LM317 SOT223

    Abstract: SIC350S BA92-03528A BA81 BA41-00416A BA41-004 49fl004 119MIL smd L272 BA920
    Text: This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List 5-1 Exploded View 5-1-1 system Exploded ALL SENS P29G 5-1 This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List


    Original     		BA75-01617A BA59-01328C BA59-01328G BA75-01616A BA92-02757A BA92-03528A BA67-00277A BA92-03125A BA43-00134A BA75-01635A LM317 SOT223 SIC350S BA81 BA41-00416A BA41-004 49fl004 119MIL smd L272 BA920 PDF

    MMZ1608S121AT

    Abstract: nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D RIMINI CPU : INTEL YONAH-ULV


    Original     		945GMS BA41-00680A BA41-00683A Pag614 TP18615 TP18616 TP18617 TP18618 TP18619 TP18620 MMZ1608S121AT nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2 PDF

    ar7161

    Abstract: schematic diagram inverter 2000w 216P9NZCGA12H AR7141 ar716 samsung dvd Schematic circuit diagram schematic diagram trace 2425 inverter 2000w r305 finger print module K4D26328 ASTM D710
    Text: SENS P20 Owner : Kevin, Lee Signature : HS, Kim Robin, Cho APPROVAL TAURUS II MAIN BOARD BA41-00346A PBA:BA92-xxxxxx, SMT:BA92-xxxxxx MP 0130-1.1 Jan.30.2003 CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : P-IV Northwood


    Original     		S3935 32MB/AUDIO BA92-01951A BA92-01951B NP20-CHN, NP20-EHQ, NP20-SHK 32MB/4WAY BA92-01971A BA92-01972A ar7161 schematic diagram inverter 2000w 216P9NZCGA12H AR7141 ar716 samsung dvd Schematic circuit diagram schematic diagram trace 2425 inverter 2000w r305 finger print module K4D26328 ASTM D710 PDF

    M28N-2

    Abstract: CDBM c28 U93 QUANTA QUANTA U93 BC1008 N25 3KV SEC U891 b30 c300 - 1 RN5101 C1254
    Text: 4 B CLK Gem A C D E 100MHz-CPU/GCLE/ITP 33MHz-PCI Ref 48MHz-USB/SIO 4 Y2 14.318MHz X-BUS FLASH Prestonia CPU Prestonia CPU USB BMC CPU BUS SP SIO 414 PP BW: 200MB/s 200MHz 100MHz x 2 LPC BUS MEMORY I/F CSB5 Y5 RAGE XL Y3 3 FLPY 400MHz(100MHz x 4) 533MHz(133MHz x 4)


    Original     		100MHz-CPU/GCLE/ITP 33MHz-PCI 48MHz-USB/SIO 318MHz 768MHz 200MB/s 200MHz 100MHz 400MHz M28N-2 CDBM c28 U93 QUANTA QUANTA U93 BC1008 N25 3KV SEC U891 b30 c300 - 1 RN5101 C1254 PDF

    LM317 SOT223

    Abstract: w33 SMD sot 23 PC-GF10 49fl004 BA75-01620A SIC350S TM61PUH8G214 MP0402H BA59-01375A BA75-01732A
    Text: This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List 5-1 Exploded View 5-1-1 system Exploded ALL SENS P27G 5-1 This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List


    Original     		NP-P27/F00/SER BA75-01617A BA59-01328C BA59-01328G BA75-01616A BA92-02757A BA92-03528C BA67-00278A BA43-00134A LM317 SOT223 w33 SMD sot 23 PC-GF10 49fl004 BA75-01620A SIC350S TM61PUH8G214 MP0402H BA59-01375A BA75-01732A PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    Untitled

    Abstract: No abstract text available
    Text: SÌ4465PY Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product v 0# m -8 r d s (ON) fQJ 0.009 9 Vqs = -4 -5 V ±1 4 0.011 9 Vqs = —2.5 V ±12 0.016 9 VGS = -1 .8 V ±1 0 9 ° \* A til SO-8 "It rm P-Channel MOSFET A B S O L U T E M A X I M U M R A T IN G S | T a


    OCR Scan     		4465PY S-59620-- 12-Oct-98 988-800X3 PDF

    IRF7205

    Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY


    OCR Scan     		BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240 PDF