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Vishay Siliconix SI4806DY N-CHANNEL 30:1 RATIO DUAL-GATE 30-V (D-S) MOSFET Power Field-Effect Transistor, 7.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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SI4806DY Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si4806DY		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
Si4806DY		Vishay Intertechnology	N-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET		Original	PDF
SI4806DY-T1		Vishay Intertechnology	N-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET		Original	PDF

SI4806DY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si4806DY Abstract: A77C Text: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Gate 1 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V "7.7 0.03 @ VGS = 4.5 V "6.4 0.25 @ VGS = 10 V "2.0 0.40 @ VGS = 4.5 V "1.5 30 Gate 2 D SO-8 G2 1 8 NC G1 2 7 D	Original	Si4806DY S-00652--Rev. 27-Mar-00 A77C	PDF
Untitled Abstract: No abstract text available Text: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Gate 1 30 Gate 2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.7 0.03 @ VGS = 4.5 V 6.4 0.25 @ VGS = 10 V 2.0 0.40 @ VGS = 4.5 V 1.5 D TrenchFETr Power MOSFET	Original	Si4806DY Si4806DY-T1 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Gate 1 RDS(ON) (W) ID (A) 0.022 @ VGS = 10 V "7.7 0.03 @ VGS = 4.5 V "6.4 0.25 @ VGS = 10 V "2.0 0.40 @ VGS = 4.5 V "1.5 30 Gate 2 D SO-8 G2 1 8 NC G1 2 7 D	Original	Si4806DY S-00652â 27-Mar-00	PDF
Untitled Abstract: No abstract text available Text: Si4806DY Siliconix N-Ch 30:1 Ration Dual-Gate 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Gate 1 RDS(ON) (W) ID (A) 0.022 @ VGS = 10 V "7.7 0.03 @ VGS = 4.5 V "6.4 0.25 @ VGS = 10 V "2.0 0.40 @ VGS = 4.5 V "1.5 30 Gate 2 D SO-8 NC G2 1 8 G1 2 7 D S 3 6 D S 4	Original	Si4806DY S-49530--Rev. 19-Nov-97	PDF
Dual-Gate Mosfet Abstract: dual gate mosfet Si4806DY Si4806DY-T1 Text: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Gate 1 30 Gate 2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.7 0.03 @ VGS = 4.5 V 6.4 0.25 @ VGS = 10 V 2.0 0.40 @ VGS = 4.5 V 1.5 D TrenchFETr Power MOSFET	Original	Si4806DY Si4806DY-T1 S-31726--Rev. 18-Aug-03 Dual-Gate Mosfet dual gate mosfet	PDF
Untitled Abstract: No abstract text available Text: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Gate 1 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.7 0.03 @ VGS = 4.5 V 6.4 0.25 @ VGS = 10 V 2.0 0.40 @ VGS = 4.5 V 1.5 D TrenchFETr Power MOSFET D 100% Rg Tested	Original	Si4806DY Si4806DY-T1 S-31726--Rev. 18-Aug-03	PDF
Si4806DY Abstract: No abstract text available Text: Si4806DY Dual Gate, N-Channel Enhancement-Mode MOSFET Product Summary VDS V Gate 1 30 Gate 2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V "7.7 0.03 @ VGS = 4.5 V "6.4 0.25 @ VGS = 10 V "2.0 0.40 @ VGS = 4.5 V "1.5 D SOĆ8 G2 1 8 NC G1 2 7 D S 3 6 D S 4 5 D G1 G2	Original	Si4806DY S-51473--Rev. 10-Feb-97	PDF
Si4806DY Abstract: Si4806DY-T1 Text: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Gate 1 30 Gate 2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.7 0.03 @ VGS = 4.5 V 6.4 0.25 @ VGS = 10 V 2.0 0.40 @ VGS = 4.5 V 1.5 D TrenchFETr Power MOSFET	Original	Si4806DY Si4806DY-T1 18-Jul-08	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
TEMIC K153P Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2	Original	WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910	PDF
sud50n025-06p Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud50n025-09p SI2301ADS SI4732CY si9110 Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m	Original	VSA-SG0019-0310 sud50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud50n025-09p SI2301ADS SI4732CY si9110	PDF