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    SI4825DDY Price and Stock

    Vishay Siliconix SI4825DDY-T1-GE3

    MOSFET P-CH 30V 14.9A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4825DDY-T1-GE3 Cut Tape 23,261 1
    • 1 $1.45
    • 10 $0.917
    • 100 $1.45
    • 1000 $0.43444
    • 10000 $0.43444
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    SI4825DDY-T1-GE3 Digi-Reel 23,261 1
    • 1 $1.45
    • 10 $0.917
    • 100 $1.45
    • 1000 $0.43444
    • 10000 $0.43444
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    SI4825DDY-T1-GE3 Reel 22,500 2,500
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    • 10000 $0.38838
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    RS SI4825DDY-T1-GE3 Bulk 2,500
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    New Advantage Corporation SI4825DDY-T1-GE3 2,500 1
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    Vishay Intertechnologies SI4825DDY-T1-GE3

    Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4825DDY-T1-GE3)
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    Avnet Americas SI4825DDY-T1-GE3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4825DDY-T1-GE3 12,205
    • 1 $0.9
    • 10 $0.736
    • 100 $0.538
    • 1000 $0.396
    • 10000 $0.337
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    Verical SI4825DDY-T1-GE3 2,500 2,500
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    SI4825DDY-T1-GE3 2,500 2,500
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    Arrow Electronics SI4825DDY-T1-GE3 2,500 17 Weeks 2,500
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    SI4825DDY-T1-GE3 2,500 17 Weeks 2,500
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    Newark SI4825DDY-T1-GE3 Cut Tape 11,643 5
    • 1 $0.972
    • 10 $0.795
    • 100 $0.645
    • 1000 $0.645
    • 10000 $0.645
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    SI4825DDY-T1-GE3 Reel 2,500
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    TTI SI4825DDY-T1-GE3 Reel 5,000 2,500
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    TME SI4825DDY-T1-GE3 1
    • 1 $1.061
    • 10 $0.714
    • 100 $0.495
    • 1000 $0.391
    • 10000 $0.391
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    Avnet Asia SI4825DDY-T1-GE3 2,500 19 Weeks 2,500
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    EBV Elektronik SI4825DDY-T1-GE3 18 Weeks 2,500
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    Others SI4825DDY

    AVAILABLE EU
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    ComSIT USA SI4825DDY 7,500
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    Others SI4825DDYT1E3

    AVAILABLE EU
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    ComSIT USA SI4825DDYT1E3 15,000
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    Vishay Intertechnologies SI4825DDYT1GE3

    P-CHANNEL 30-V (D-S) MOSFET Small Signal Field-Effect Transistor, 14.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI4825DDYT1GE3 2,500
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    Find more SI4825DDY price and stock on Findchips.com

    SI4825DDY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4825DDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 14.9A 8SOIC Original PDF

    SI4825DDY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4825DDY 18-Jul-08

    SI4825DDY-T1-GE3

    Abstract: No abstract text available
    Text: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4825DDY Si4825DDY-T1-GE3 18-Jul-08

    5458

    Abstract: M 3101 74209 AN609
    Text: Si4825DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4825DDY AN609, 15-Sep-08 5458 M 3101 74209 AN609

    SI4825DDY-T1-GE3

    Abstract: SI4825DDY Si4825DY Si4825DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4825DDY vs. Si4825DY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4825DDY-T1-E3 replaces Si4825DY-T1-E3 Si4825DDY-T1-GE3 replaces Si4825DY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4825DDY Si4825DY Si4825DDY-T1-E3 Si4825DY-T1-E3 Si4825DDY-T1-GE3 Si4825DY-T1-GE3 15-Jul-09

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4825DDY Si4825DDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4825DDY Si4825DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4825DDY Si4825DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4825DDY-T1-GE3

    Abstract: SI4825DDY-T1-GE3 MARKING 68926
    Text: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4825DDY Si4825DDY-T1-GE3 11-Mar-11 SI4825DDY-T1-GE3 MARKING 68926

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4825DDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4825DDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4825DDY Si4825DDY-T1-GE3 11-Mar-11

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477