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Vishay Siliconix SI4880DY-T1-E3 MOSFET N-CH 30V 13A 8-SOIC
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DigiKey	SI4880DY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	SI4880DY-T1-E3		1,688			1 $2 10 $2 100 $2 1000 $0.92 10000 $0.84	Buy Now
Vishay Siliconix SI4880DY-T1-GE3 MOSFET N-CH 30V 13A 8-SOIC
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DigiKey	SI4880DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI4880DYT1 Electronic Component
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ComSIT USA	SI4880DYT1		2,233			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI4880DY N-CHANNEL REDUCED QG, FAST SWITCHING MOSFET Power Field-Effect Transistor, 13A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4880DY		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Huntington SI4880DY-T1-E3 MOSFET N-CH 30V 13A 8-SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SI4880DY-T1-E3		34,100			1 - 10 - 100 $0.848 1000 $0.566 10000 $0.566	Buy Now

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SI4880 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4880DY	Vishay Intertechnology	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
SI4880DY	Vishay Siliconix	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
Si4880DY SPICE Device Model	Vishay	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
SI4880DY-T1	Vishay Intertechnology	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
SI4880DY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC	Original	PDF
SI4880DY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC	Original	PDF

SI4880 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si4880DY Abstract: Si4880DY-T1 Si4880DY-T1-E3 Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • TrenchFET Power MOSFETS • High-Efficiency • PWM Optimized Pb-free	Original	Si4880DY Si4880DY-T1 Si4880DY-T1-E3 S-60382 13-Mar-06	PDF
S-60382 Abstract: 60382 Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • TrenchFET Power MOSFETS • High-Efficiency • PWM Optimized Pb-free	Original	Si4880DY Si4880DY-T1 Si4880DY-T1-E3 18-Jul-08 S-60382 60382	PDF
Untitled Abstract: No abstract text available Text: Si4880DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V "13 0.014 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4880DY 08-Apr-05	PDF
Si4880DY Abstract: Si4880DY SPICE Device Model Text: SPICE Device Model Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4880DY S-60245Rev. 20-Feb-06 Si4880DY SPICE Device Model	PDF
Untitled Abstract: No abstract text available Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS	Original	Si4880DY 2002/95/EC Si4880DY-T1-E3 Si4880DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
60382 Abstract: No abstract text available Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • TrenchFET Power MOSFETS • High-Efficiency • PWM Optimized Pb-free	Original	Si4880DY Si4880DY-T1 Si4880DY-T1-E3 08-Apr-05 60382	PDF
Untitled Abstract: No abstract text available Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS	Original	Si4880DY 2002/95/EC Si4880DY-T1-E3 Si4880DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si4880DY Abstract: No abstract text available Text: Si4880DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V "13 0.014 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4880DY S-60711--Rev. 01-Feb-99	PDF
Si4880DY Abstract: Si4880DY-T1-E3 Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS	Original	Si4880DY 2002/95/EC Si4880DY-T1-E3 Si4880DY-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V "13 0.014 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4880DY S-60711--Rev. 01-Feb-99	PDF
Si4880DY Abstract: Si4880DY-T1-E3 18-May Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS	Original	Si4880DY 2002/95/EC Si4880DY-T1-E3 Si4880DY-T1-GE3 11-Mar-11 18-May	PDF
SI4880DY Abstract: No abstract text available Text: SPICE Device Model SI4880DY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Sub-circuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range	Original	SI4880DY SI4880DY	PDF
74647 Abstract: 23967 3052 mosfet A 7710 AN609 Si4880DY Text: Si4880DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4880DY AN609 01-Jun-07 74647 23967 3052 mosfet A 7710	PDF
Si4880DY Abstract: No abstract text available Text: SPICE Device Model Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4880DY 18-Jul-08	PDF

fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
170M Abstract: IRF7811A Si4364DY Si4416DY Si4420DY Si4842DY Si4880DY in-line switch Text: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany Ultra-High Cell Density TrenchFET Devices: Obtaining the Critical Balance of Switching Performance Versus On-Resistance and Its Associated Impact on Device Selection Guy Moxey: Vishay Siliconix, Bracknell, UK	Original		PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2	PDF
71933 Abstract: Mohan si4886 Si4420 siliconix Mohan power electronics converters applications a MOSFET SO-8 Si4420 siliconix datasheet SI4442 AN605 Si4420 Text: AN605 Vishay Siliconix Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit Jess Brown, Guy Moxey INTRODUCTION There are several factors which affect the gate of the MOSFET, and it is necessary to understand the fundamental	Original	AN605 08-Sep-03 71933 Mohan si4886 Si4420 siliconix Mohan power electronics converters applications a MOSFET SO-8 Si4420 siliconix datasheet SI4442 AN605 Si4420	PDF
STM9435 Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC	Original	STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05	PDF
semiconductor cross reference Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC	Original	STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference	PDF
F02JK2E Abstract: 88E8001 Socket AM2 18pf 8mhz ics954213 NV44MV ITE8705F capacitor C0402 88E8001 pin nvidia gpu nv43 Text: 5 4 3 2 1 CPU DOTHAN 533MHZ D D PAGE 3,4 FSB 533MHz LVDS Nvidia NV44M-V / NV43M PAGE 25 CRT PAGE 26 MCH-M Alviso PCI-E DDR2 DDR2 SO-DIMM PAGE 22,23,24 TV OUT PAGE 6,7,8,9,10 PAGE 12,13,14,15,16 ,55,56,57,58 PAGE 26 DMI interface PCMCIA PAGE 36 C PCI 33MHz	Original	533MHZ 533MHz NV44M-V NV43M 33MHz R5C841 33MHz LPC47N217 88E8001 CODECuF/10V F02JK2E 88E8001 Socket AM2 18pf 8mhz ics954213 NV44MV ITE8705F capacitor C0402 88E8001 pin nvidia gpu nv43	PDF
INVERTER BOARD Asus A6 Abstract: ati rage 128 amc ver 2.0 Asus PC MOTHERBOARD CIRCUIT schematic asus notebook 3220 schematic lcd inverter ASUS asus a4 INVERTER BOARD REV 2.0 R5C475 Asus PC MOTHERBOARD CIRCUIT MANUAL INVERTER BOARD Asus F3 asus notebook schematic diagram free Text: 1 2 3 Notebook Computer Service Manual 4 5 6 3220/3420/3620 7 8 i Preface NOTICE The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any	Original	HRS/RJ11 INVERTER BOARD Asus A6 ati rage 128 amc ver 2.0 Asus PC MOTHERBOARD CIRCUIT schematic asus notebook 3220 schematic lcd inverter ASUS asus a4 INVERTER BOARD REV 2.0 R5C475 Asus PC MOTHERBOARD CIRCUIT MANUAL INVERTER BOARD Asus F3 asus notebook schematic diagram free	PDF

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SI4880 Price and Stock

Vishay Siliconix SI4880DY-T1-E3

Vishay Siliconix SI4880DY-T1-GE3

Vishay Siliconix SI4880DYT1

Vishay Siliconix SI4880DY

Vishay Huntington SI4880DY-T1-E3

SI4880 Datasheets (6)

SI4880 Datasheets Context Search

Si4880DY

S-60382

Untitled

Si4880DY

Untitled

60382

Untitled

Si4880DY

Si4880DY

Untitled

Si4880DY

SI4880DY

74647

Si4880DY

fqp60n06

170M

FSQ510 Equivalent

71933

STM9435

IRF1830G

VN10KLS

semiconductor cross reference

F02JK2E

INVERTER BOARD Asus A6