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    SI4880DY Search Results

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    SI4880DY Price and Stock

    Vishay Siliconix SI4880DY-T1-E3

    MOSFET N-CH 30V 13A 8-SOIC
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    DigiKey SI4880DY-T1-E3 Reel
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    Quest Components SI4880DY-T1-E3 1,688
    • 1 $2
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    • 1000 $0.92
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    Vishay Siliconix SI4880DY-T1-GE3

    MOSFET N-CH 30V 13A 8-SOIC
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    DigiKey SI4880DY-T1-GE3 Reel
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    Vishay Siliconix SI4880DYT1

    Electronic Component
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    ComSIT USA SI4880DYT1 2,233
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    Vishay Siliconix SI4880DY

    N-CHANNEL REDUCED QG, FAST SWITCHING MOSFET Power Field-Effect Transistor, 13A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI4880DY 500
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    Vishay Huntington SI4880DY-T1-E3

    MOSFET N-CH 30V 13A 8-SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI4880DY-T1-E3 34,100
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    • 100 $0.848
    • 1000 $0.566
    • 10000 $0.566
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    Find more SI4880DY price and stock on Findchips.com

    SI4880DY Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4880DY Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    Si4880DY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4880DY-T1 Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4880DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC Original PDF
    SI4880DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC Original PDF

    SI4880DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si4880DY

    Abstract: Si4880DY-T1 Si4880DY-T1-E3
    Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • TrenchFET Power MOSFETS • High-Efficiency • PWM Optimized Pb-free


    Original     		Si4880DY Si4880DY-T1 Si4880DY-T1-E3 S-60382 13-Mar-06 PDF

    S-60382

    Abstract: 60382
    Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • TrenchFET Power MOSFETS • High-Efficiency • PWM Optimized Pb-free


    Original     		Si4880DY Si4880DY-T1 Si4880DY-T1-E3 18-Jul-08 S-60382 60382 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4880DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V "13 0.014 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si4880DY 08-Apr-05 PDF

    Si4880DY

    Abstract: Si4880DY SPICE Device Model
    Text: SPICE Device Model Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4880DY S-60245Rev. 20-Feb-06 Si4880DY SPICE Device Model PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS


    Original     		Si4880DY 2002/95/EC Si4880DY-T1-E3 Si4880DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    60382

    Abstract: No abstract text available
    Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • TrenchFET Power MOSFETS • High-Efficiency • PWM Optimized Pb-free


    Original     		Si4880DY Si4880DY-T1 Si4880DY-T1-E3 08-Apr-05 60382 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS


    Original     		Si4880DY 2002/95/EC Si4880DY-T1-E3 Si4880DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si4880DY

    Abstract: No abstract text available
    Text: Si4880DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V "13 0.014 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si4880DY S-60711--Rev. 01-Feb-99 PDF

    Si4880DY

    Abstract: Si4880DY-T1-E3
    Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS


    Original     		Si4880DY 2002/95/EC Si4880DY-T1-E3 Si4880DY-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V "13 0.014 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si4880DY S-60711--Rev. 01-Feb-99 PDF

    Si4880DY

    Abstract: Si4880DY-T1-E3 18-May
    Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS


    Original     		Si4880DY 2002/95/EC Si4880DY-T1-E3 Si4880DY-T1-GE3 11-Mar-11 18-May PDF

    SI4880DY

    Abstract: No abstract text available
    Text: SPICE Device Model SI4880DY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Sub-circuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		SI4880DY SI4880DY PDF

    74647

    Abstract: 23967 3052 mosfet A 7710 AN609 Si4880DY
    Text: Si4880DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4880DY AN609 01-Jun-07 74647 23967 3052 mosfet A 7710 PDF

    Si4880DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4880DY 18-Jul-08 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    170M

    Abstract: IRF7811A Si4364DY Si4416DY Si4420DY Si4842DY Si4880DY in-line switch
    Text: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany Ultra-High Cell Density TrenchFET Devices: Obtaining the Critical Balance of Switching Performance Versus On-Resistance and Its Associated Impact on Device Selection Guy Moxey: Vishay Siliconix, Bracknell, UK


    Original     		PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 PDF

    semiconductor cross reference

    Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference PDF

    F02JK2E

    Abstract: 88E8001 Socket AM2 18pf 8mhz ics954213 NV44MV ITE8705F capacitor C0402 88E8001 pin nvidia gpu nv43
    Text: 5 4 3 2 1 CPU DOTHAN 533MHZ D D PAGE 3,4 FSB 533MHz LVDS Nvidia NV44M-V / NV43M PAGE 25 CRT PAGE 26 MCH-M Alviso PCI-E DDR2 DDR2 SO-DIMM PAGE 22,23,24 TV OUT PAGE 6,7,8,9,10 PAGE 12,13,14,15,16 ,55,56,57,58 PAGE 26 DMI interface PCMCIA PAGE 36 C PCI 33MHz


    Original     		533MHZ 533MHz NV44M-V NV43M 33MHz R5C841 33MHz LPC47N217 88E8001 CODECuF/10V F02JK2E 88E8001 Socket AM2 18pf 8mhz ics954213 NV44MV ITE8705F capacitor C0402 88E8001 pin nvidia gpu nv43 PDF

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30 PDF

    24c08wp

    Abstract: 24C08 WP B58 258 24c02 LTN141X8-L00 24rf08 c11ph BC578 HT14X14-101 24C08W samsung LED TV schema
    Text: A 4 3 B C Thermal&Fan Controler GMT PAGE:22 G768B CPU CORE REGULATOR MAXIM MAX1717 PAGE:5 SYSTEM DC/DC REGULATOR MAXIM MAX1631 PAGE:28 BATTERY CHARGER Controler MAXIM PAGE:29 MAX1772 BATTERY CHARGER FirmWare Ambit MC68HC908SR12 CPU Intel Mobile PIII/CELERON


    Original     		ICS9248-157 ICS9112BM-17 MAX1717 MAX1772 G768B PC100MHz MAX1631 MC68HC908SR12 100MHz M1632-C 24c08wp 24C08 WP B58 258 24c02 LTN141X8-L00 24rf08 c11ph BC578 HT14X14-101 24C08W samsung LED TV schema PDF