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    SI4967DY Search Results

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    SI4967DY Price and Stock

    Vishay Siliconix SI4967DY-T1-E3

    MOSFET 2P-CH 12V 8SOIC
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    DigiKey SI4967DY-T1-E3 Reel
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    Vishay Siliconix SI4967DY-T1-GE3

    MOSFET 2P-CH 12V 8SOIC
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    DigiKey SI4967DY-T1-GE3 Reel
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    Vishay Siliconix SI4967DY-T1

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    Bristol Electronics SI4967DY-T1 2,214
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    Quest Components SI4967DY-T1 1,771
    • 1 $2.92
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    SI4967DY-T1 1,651
    • 1 $1.825
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    Vishay Siliconix SI4967DY

    POWER FIELD-EFFECT TRANSISTOR, 7.5A I(D), 12V, 0.023OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components SI4967DY 60
    • 1 $1.875
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    Vishay Intertechnologies SI4967DYT1E3

    DUAL P-CHANNEL 1.8-V (G-S) MOSFET Power Field-Effect Transistor, 7.5A I(D), 12V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI4967DYT1E3 160
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    SI4967DY Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4967DY Unknown Metal oxide P-channel FET, Enhancement Type Original PDF
    Si4967DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4967DY Vishay Intertechnology Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4967DY-DS Vishay Telefunken DS-Spice Model for Si4967DY Original PDF
    Si4967DY SPICE Device Model Vishay Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4967DY-T1 Vishay Intertechnology Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4967DY-T1 Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4967DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 8SOIC Original PDF
    SI4967DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 8SOIC Original PDF

    SI4967DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4967DY 2002/95/EC Si4967DY-T1-E3 Si4967DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si4967DY

    Abstract: 5A6V
    Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.023 @ VGS = –4.5 V "7.5 0.030 @ VGS = –2.5 V "6.7 0.045 @ VGS = –1.8 V "5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View


    Original     		Si4967DY S-59633--Rev. 12-Oct-98 5A6V PDF

    Si4967DY

    Abstract: Si4967DY-T1-E3
    Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4967DY 2002/95/EC Si4967DY-T1-E3 Si4967DY-T1-GE3 18-Jul-08 PDF

    Si4967DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4967DY 18-Jul-08 PDF

    Si4967DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4967DY S-61927Rev. 09-Oct-06 PDF

    SI4967DY

    Abstract: No abstract text available
    Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.023 @ VGS = –4.5 V "7.5 0.030 @ VGS = –2.5 V "6.7 0.045 @ VGS = –1.8 V "5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View


    Original     		Si4967DY S-59633--Rev. 12-Oct-98 PDF

    Si4967DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4967DY 25-Feb-99 PDF

    SI4967DY

    Abstract: No abstract text available
    Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2


    Original     		Si4967DY Si4967DY-T1 08-Apr-05 PDF

    SI4967DY

    Abstract: No abstract text available
    Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2


    Original     		Si4967DY Si4967DY-T1 18-Jul-08 PDF

    3771

    Abstract: 8948 AN609 Si4967DY
    Text: Si4967DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4967DY AN609 12-Jan-06 3771 8948 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4967DY 2002/95/EC Si4967DY-T1-E3 Si4967DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si4967DY

    Abstract: Si4967DY-T1
    Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2


    Original     		Si4967DY Si4967DY-T1 S-31989--Rev. 13-Oct-03 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4967DY V1SHAY Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si o SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL L IM IT Drain-Source Voltage


    OCR Scan     		Si4967DY PDF

    Untitled

    Abstract: No abstract text available
    Text: SÌ4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product V p s (V» -12 RDSfOM} ( ° ) I d (A) 0.023 @ VGs = -4.5 V ±7.5 0.030 @ VGS = -2 .5 V ±6 .7 0.045 @ Vqs = -1 -8 V ±5.4 -JuA 9° ' A V* Si S2 p p SO-8 Gì “n ! 3- n ! n Di n O2 Dt


    OCR Scan     		4967DY S-59633-- 12-Oct-98 Si4967DY PDF