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    SI550 Price and Stock

    Vishay Siliconix SI5504BDC-T1-GE3

    MOSFET N/P-CH 30V 4A/3.7A 1206-8
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    DigiKey SI5504BDC-T1-GE3 Reel 33,000 3,000
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    SI5504BDC-T1-GE3 Cut Tape 2,073 1
    • 1 $0.97
    • 10 $0.791
    • 100 $0.6151
    • 1000 $0.4247
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    Vishay Siliconix SI5504BDC-T1-E3

    MOSFET N/P-CH 30V 4A/3.7A 1206-8
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    DigiKey SI5504BDC-T1-E3 Cut Tape 2,990 1
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    SI5504BDC-T1-E3 Digi-Reel 1
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    SI5504BDC-T1-E3 Reel 3,000
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    RS SI5504BDC-T1-E3 Bulk 3,000
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    Vishay Siliconix SI5504DC-T1-E3

    MOSFET N/P-CH 30V 2.9A 1206-8
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    DigiKey SI5504DC-T1-E3 Digi-Reel 1
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    SI5504DC-T1-E3 Reel
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    Vishay Siliconix SI5509DC-T1-E3

    MOSFET N/P-CH 20V 6.1A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5509DC-T1-E3 Digi-Reel 1
    • 1 $0.97
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    SI5509DC-T1-E3 Cut Tape
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    Quest Components SI5509DC-T1-E3 138
    • 1 $1.5
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    SI5509DC-T1-E3 138
    • 1 $1.5
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    Vishay Siliconix SI5504DC-T1-GE3

    MOSFET N/P-CH 30V 2.9A 1206-8
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    Find more SI550 price and stock on Findchips.com

    SI550 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI550 Silicon Laboratories VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR (VCXO) 10 MHZ TO 1.4 GHZ Original PDF
    SI-55002-F Bel Fuse SI-55002-F Scan PDF
    SI-55003-F Stewart Connector Systems Modular Connectors - Jacks With Magnetics, Connectors, Interconnects, CONN MAGJACK 1PORT 100 BASE-T Original PDF
    SI-55004-F Stewart Connector Systems Modular Connectors - Jacks With Magnetics, Connectors, Interconnects, CONN MAGJACK 1PORT 100 BASE-T Original PDF
    SI5504BDC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 4A 1206-8 Original PDF
    SI5504BDC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 4A 1206-8 Original PDF
    Si5504DC Vishay Intertechnology Complementary 30-V (D-S) MOSFET Original PDF
    SI5504DC Vishay Siliconix MOSFETs Original PDF
    Si5504DC SPICE Device Model Vishay Complementary 20-V (D-S) MOSFET Original PDF
    SI5504DC-T1 Vishay Intertechnology Complementary 30-V (D-S) MOSFET Original PDF
    SI5504DC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 2.9A 1206-8 Original PDF
    SI5504DC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 2.9A 1206-8 Original PDF
    SI5509DC Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET Original PDF
    SI5509DC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 6.1A 1206-8 Original PDF
    SI5509DC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 6.1A 1206-8 Original PDF

    SI550 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si5504BDC www.vishay.com Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = -10 V -3.7 0.235 at VGS = -4.5 V -2.8 1206-8 8 1.


    Original     		PDF Si5504BDC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    marking code ED

    Abstract: No abstract text available
    Text: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V


    Original     		PDF Si5509DC 2002/95/EC Si5509DC-T1-E3 Si5509DC-T1-GE3 11-Mar-11 marking code ED

    Si5509DC

    Abstract: s417
    Text: Si5509DC New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) 0.052 at VGS = 4.5 V ID (A) 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = –4.5 V –4.8a


    Original     		PDF Si5509DC 08-Apr-05 s417

    Si5504DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5504DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5504DC S-61928Rev. 09-Oct-06

    anritsu PSRR

    Abstract: AN255 Si550 kvco vco 622 Si55
    Text: AN255 R EPLACING 6 2 2 M H Z VCSO DEVICES W I T H T HE Si55 X V C X O 1. Introduction The Silicon Laboratories Si550 is a high-performance, voltage-controlled crystal oscillator VCXO device that is suitable for use in SONET/SDH phase-locked loop (PLL) applications. The Si550 is available in a 5x7 mm package


    Original     		PDF AN255 Si550 anritsu PSRR AN255 kvco vco 622 Si55

    AN609

    Abstract: Si5504BDC
    Text: Si5504BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5504BDC AN609 03-May-07

    SI5509DC

    Abstract: Si5509DC-T1-GE3 si5509dc-t1-e3 si5509
    Text: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V


    Original     		PDF Si5509DC 2002/95/EC 18-Jul-08 Si5509DC-T1-GE3 si5509dc-t1-e3 si5509

    Untitled

    Abstract: No abstract text available
    Text: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)


    Original     		PDF Si5504BDC 2002/95/EC 18-Jul-08

    MOSFET QG

    Abstract: Si5504DC
    Text: SPICE Device Model Si5504DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Applicable over the −55 to 125°C Temperature Range


    Original     		PDF Si5504DC 07-Oct-99 MOSFET QG

    8829 mosfet

    Abstract: AN609 Si5509DC 17706 54256
    Text: Si5509DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5509DC AN609 26-Jul-07 8829 mosfet 17706 54256

    Untitled

    Abstract: No abstract text available
    Text: Si5504DC New Product Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = –10 V "2.8 0.290 @ VGS = –4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET


    Original     		PDF Si5504DC S-62428--Rev. 04-Oct-99

    74166

    Abstract: Si5509DC 74166 applications 10VID
    Text: SPICE Device Model Si5509DC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5509DC 18-Jul-08 74166 74166 applications 10VID

    AN609

    Abstract: Si5504DC
    Text: Si5504DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5504DC AN609 21-Jun-07

    Untitled

    Abstract: No abstract text available
    Text: Si5504DC Vishay Siliconix Complementary 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V ± 3.9 0.143 at VGS = 4.5 V ± 3.0 0.165 at VGS = - 10 V ± 2.8 0.290 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5504DC 2002/95/EC Si5504DC-T1-E3 Si5504DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5504DC-T1-E3

    Abstract: Si5504DC
    Text: Si5504DC Vishay Siliconix Complementary 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V ± 3.9 0.143 at VGS = 4.5 V ± 3.0 0.165 at VGS = - 10 V ± 2.8 0.290 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5504DC 2002/95/EC Si5504DC-T1-E3 Si5504DC-T1-GE3 18-Jul-08

    Si5509DC

    Abstract: No abstract text available
    Text: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V


    Original     		PDF Si5509DC 2002/95/EC 11-Mar-11

    Si5504DC

    Abstract: Si5504DC-T1
    Text: Si5504DC Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1


    Original     		PDF Si5504DC Si5504DC-T1 S-21251--Rev. 05-Aug-02

    Si5504DC

    Abstract: Si5504DC-T1
    Text: Si5504DC Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1


    Original     		PDF Si5504DC Si5504DC-T1 18-Jul-08

    Si5504BDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5504BDC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)


    Original     		PDF Si5504BDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5504BDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5504BDC S-71047Rev. 21-May-07

    Si5504BDC

    Abstract: Si5504BDC-T1-E3 si5504 transistor mosfet n-ch drain current Si5504DC Si5504DC-T1 N- and P-Channel 30-V D-S MOSFET
    Text: Specification Comparison Vishay Siliconix Si5504BDC vs. Si5504DC Description: Package: Pin Out: N- and P-Channel 30-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements Si5504BDC-T1-E3 Replaces Si5504DC-T1-E3 Si5504BDC-T1-E3 Replaces Si5504DC-T1


    Original     		PDF Si5504BDC Si5504DC Si5504BDC-T1-E3 Si5504DC-T1-E3 Si5504DC-T1 30-Aug-07 si5504 transistor mosfet n-ch drain current N- and P-Channel 30-V D-S MOSFET

    62428

    Abstract: Si5504DC "marking code D2"
    Text: Si5504DC New Product Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = –10 V "2.8 0.290 @ VGS = –4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET


    Original     		PDF Si5504DC S-62428--Rev. 04-Oct-99 62428 "marking code D2"

    GSI550

    Abstract: IGT7E50CS
    Text: Preview Products G SI550, IGT7E50CS File N um b er 2328 Current Sensing IGT Transistors Insulated Gate Bipolar Transistors 50 A, 500 V rDs on = 0.052 fi TERMINAL DIAGRAM Features: • ■ ■ ■ ■ Lo w Vce(sat) - 1 . 5 V typ. @ 50 A U ltra -fa st tu rn -o n - 200 n s ty p ic a l


    OCR Scan     		PDF GSI550, IGT7E50CS GSI550 IGT7E50CS 60Msec 92GS-44017