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    Vishay Siliconix SI5933CDC-T1-E3

    MOSFET 2P-CH 20V 3.7A 1206-8
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    Vishay Siliconix SI5933CDC-T1-GE3

    MOSFET 2P-CH 20V 3.7A 1206-8
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    SI5933CDC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5933CDC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 3.7A 1206-8 Original PDF
    SI5933CDC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 3.7A 1206-8 Original PDF

    SI5933CDC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    25A18

    Abstract: SI5933CDC
    Text: New Product Si5933CDC Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.0 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 Qg (Typ.) 4.1 nC • TrenchFET Power MOSFET


    Original     		Si5933CDC Si5933CDC-T1-E3 18-Jul-08 25A18 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5933CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.0 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 Qg (Typ.) 4.1 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si5933CDC 2002/95/EC Si5933CDC-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si5933CDC-T1-GE3

    Abstract: marking CODE D2
    Text: Si5933CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.0 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 Qg (Typ.) 4.1 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si5933CDC 2002/95/EC Si5933CDC-T1-E3 Si5933CDC-T1-GElectual 18-Jul-08 Si5933CDC-T1-GE3 marking CODE D2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5933CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.0 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 Qg (Typ.) 4.1 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si5933CDC 2002/95/EC Si5933CDC-T1-E3 Si5933CDC-T1-GE3 11-Mar-11 PDF

    718s

    Abstract: SI5933CDC
    Text: SPICE Device Model Si5933CDC Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si5933CDC 18-Jul-08 718s PDF

    AN609

    Abstract: Cauer 13321
    Text: Si5933CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		Si5933CDC AN609, 23-Jul-08 AN609 Cauer 13321 PDF

    Specification Comparison

    Abstract: SI5933CD Si5933DC Si5933DC-T1 Si5933DC-T1-E3 SI5933CDC
    Text: Specification Comparison Vishay Siliconix Si5933CDC vs. Si5933DC Description: Package: Pin Out: Dual N-Channel 20-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5933CDC-T1-E3 replaces Si5933DC-T1-E3 Si5933CDC-T1-E3 replaces Si5933DC-T1


    Original     		Si5933CDC Si5933DC Si5933CDC-T1-E3 Si5933DC-T1-E3 Si5933DC-T1 06-Aug-08 Specification Comparison SI5933CD PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5933CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 VDS (V) - 20 0.180 at VGS = - 2.5 V - 3.0 0.222 at VGS = - 1.8 V - 3.0 Qg (Typ.) 4.1 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si5933CDC 2002/95/EC Si5933CDC-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF