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    SI6423DQ Price and Stock

    Vishay Siliconix SI6423DQ-T1-GE3

    MOSFET P-CH 12V 8.2A 8TSSOP
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    DigiKey SI6423DQ-T1-GE3 Cut Tape 6,778 1
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    SI6423DQ-T1-GE3 Digi-Reel 6,778 1
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    SI6423DQ-T1-GE3 Reel 6,000 3,000
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    New Advantage Corporation SI6423DQ-T1-GE3 18,000 1
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    Vishay Siliconix SI6423DQ-T1-BE3

    P-CHANNEL 12-V (D-S) MOSFET
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    DigiKey SI6423DQ-T1-BE3 Digi-Reel 2,936 1
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    SI6423DQ-T1-BE3 Cut Tape 2,936 1
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    SI6423DQ-T1-BE3 Reel 3,000
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    Vishay Siliconix SI6423DQ-T1-E3

    MOSFET P-CH 12V 8.2A 8TSSOP
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    DigiKey SI6423DQ-T1-E3 Cut Tape 1
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    SI6423DQ-T1-E3 Digi-Reel 1
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    SI6423DQ-T1-E3 Reel 3,000
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    Quest Components SI6423DQ-T1-E3 4
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    New Advantage Corporation SI6423DQ-T1-E3 24,000 1
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    Vishay Intertechnologies SI6423DQ-T1-GE3

    Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6423DQ-T1-GE3)
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    Avnet Americas SI6423DQ-T1-GE3 Reel 57,000 13 Weeks 3,000
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    Mouser Electronics SI6423DQ-T1-GE3 7,507
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    Verical SI6423DQ-T1-GE3 3,000 3,000
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    SI6423DQ-T1-GE3 3,000 3,000
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    SI6423DQ-T1-GE3 1,405 8
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    Arrow Electronics SI6423DQ-T1-GE3 3,000 13 Weeks 3,000
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    SI6423DQ-T1-GE3 Cut Strips 1,405 13 Weeks 1
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    Newark SI6423DQ-T1-GE3 Reel 3,000
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    TTI SI6423DQ-T1-GE3 Reel 21,000 3,000
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    SI6423DQ-T1-GE3 1,405
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    EBV Elektronik SI6423DQ-T1-GE3 14 Weeks 3,000
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    Vishay Intertechnologies SI6423DQ-T1-BE3

    Transistor Power MOSFET P-CH 12V 9.5A 8-Pin TSSOP - Tape and Reel (Alt: SI6423DQ-T1-BE3)
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    Avnet Americas SI6423DQ-T1-BE3 Reel 9 Weeks 3,000
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    Newark SI6423DQ-T1-BE3 Bulk 3,000
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    TTI SI6423DQ-T1-BE3 Reel 9,000 3,000
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    Find more SI6423DQ price and stock on Findchips.com

    SI6423DQ Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6423DQ Vishay Siliconix MOSFETs Original PDF
    Si6423DQ-E3 Vishay Transistor Mosfet P-CH 12V 8.2A 8TSSOP Original PDF
    Si6423DQ SPICE Device Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF
    Si6423DQ-T1 Vishay Transistor Mosfet P-CH 12V 8.2A 8TSSOP T/R Original PDF
    Si6423DQ-T1-E3 Vishay Transistor Mosfet P-CH 12V 8.2A 8TSSOP T/R Original PDF
    SI6423DQ-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 8.2A 8-TSSOP Original PDF
    SI6423DQ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 8.2A 8-TSSOP Original PDF

    SI6423DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6423DQ

    Abstract: Si6423DQ-T1
    Text: Si6423DQ New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0085 @ VGS = - 4.5 V - 9.5 0.0106 @ VGS = - 2.5 V - 8.5 0.014 @ VGS = - 1.8 V - 7.5 APPLICATIONS D Load Switch


    Original     		PDF Si6423DQ Si6423DQ-T1 08-Apr-05

    AN609

    Abstract: Si6423DQ
    Text: Si6423DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si6423DQ AN609 27-Jun-07

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si6423DQ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si6423DQ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si6423DQ

    Abstract: SI6423DQ-T1-GE3
    Text: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 - 12 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		PDF Si6423DQ Si6423DQ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		PDF Si6423DQ Si6423DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 - 12 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		PDF Si6423DQ Si6423DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si6423DQ

    Abstract: No abstract text available
    Text: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 - 12 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		PDF Si6423DQ Si6423DQ-T1-GE3 18-Jul-08

    Si6423DQ

    Abstract: Si6423DQ-T1
    Text: Si6423DQ New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0085 @ VGS = - 4.5 V - 9.5 0.0106 @ VGS = - 2.5 V - 8.5 0.014 @ VGS = - 1.8 V - 7.5 APPLICATIONS D Load Switch


    Original     		PDF Si6423DQ Si6423DQ-T1 S-31419--Rev. 07-Jul-03

    Untitled

    Abstract: No abstract text available
    Text: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 - 12 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		PDF Si6423DQ Si6423DQ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 - 12 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		PDF Si6423DQ Si6423DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si6423DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6423DQ 18-Jul-08

    Si6423DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6423DQ S-52526Rev. 12-Dec-05

    Si6423DQ

    Abstract: Si6423DQ-T1-GE3
    Text: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 - 12 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		PDF Si6423DQ Si6423DQ-T1-GE3 08-Apr-05

    72327

    Abstract: Si6423DQ 53nc50
    Text: SPICE Device Model Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6423DQ 11-Jun-03 72327 53nc50

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3