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    Rochester Electronics LLC SI6466DQ

    N-CHANNEL POWER MOSFET
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    Fairchild Semiconductor Corporation SI6466DQ

    7.8A, 20V, 0.015ohm, N-Channel Power MOSFET '
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    Rochester Electronics SI6466DQ 3,040 1
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    SI6466DQ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si6466DQ Fairchild Semiconductor 20V N-Channel PowerTrench MOSFET Original PDF
    SI6466DQ Fairchild Semiconductor 20V N-Channel PowerTrench MOSFET Original PDF
    SI6466DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI6466DQ-T1 Vishay Intertechnology N-Channel 2.5-V (G-S) MOSFET Original PDF

    SI6466DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6466DQ

    Abstract: No abstract text available
    Text: Si6466DQ N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V "7.8 0.021 @ VGS = 2.5 V "6.3 D TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6466DQ D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET


    Original     		PDF Si6466DQ S-54704--Rev. 13-Oct-97

    Untitled

    Abstract: No abstract text available
    Text: Si6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 7.8 0.021 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D 6 S 5 D * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6466DQ Si6466DQ-T1 S-31725--Rev. 18-Aug-03

    S-54704

    Abstract: No abstract text available
    Text: Si6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V "7.8 0.021 @ VGS = 2.5 V "6.3 D TSSOP-8 D 1 S 2 8 D 7 S S G 3 6 S 4 5 D D Si6466DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View


    Original     		PDF Si6466DQ S-54704--Rev. 13-Oct-97 S-54704

    APPLICATION NOTE AN-6466

    Abstract: No abstract text available
    Text: Si6466DQ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF Si6466DQ APPLICATION NOTE AN-6466

    Si6466DQ

    Abstract: Si6466
    Text: SPICE Device Model Si6466DQ N-Channel 2.5-V G-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si6466DQ Si6466

    Si6466DQ

    Abstract: Si6466DQ-T1
    Text: Si6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 7.8 0.021 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D 6 S 5 D * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6466DQ Si6466DQ-T1 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.014 @ VGS = 4.5 V "7.8 0.021 @ VGS = 2.5 V "6.3 D TSSOP-8 D 1 S 2 8 D 7 S S G 3 6 S 4 5 D D Si6466DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View


    Original     		PDF Si6466DQ S-54704--Rev. 13-Oct-97

    Untitled

    Abstract: No abstract text available
    Text: Si6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 7.8 0.021 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D 6 S 5 D * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6466DQ Si6466DQ-T1 08-Apr-05

    A2033

    Abstract: No abstract text available
    Text: Si6466DQ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF Si6466DQ A2033

    74232

    Abstract: Si6466ADQ Si6466ADQ-T1 Si6466DQ Si6466DQ-T1
    Text: Specification Comparison Vishay Siliconix Si6466ADQ vs. Si6466DQ Description: Package: Pin Out: N-Channel, 2.5 V G-S MOSFET TSSOP-8 Identical Part Number Replacements Si6466ADQ-T1-E3 Replaces Si6466DQ-T1-E3 Si6466ADQ-T1 Replaces Si6466DQ-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si6466ADQ Si6466DQ Si6466ADQ-T1-E3 Si6466DQ-T1-E3 Si6466ADQ-T1 Si6466DQ-T1 74232

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    LT1517-5

    Abstract: LTC1700 919AS-IR8N
    Text: Final Electrical Specifications LTC1700 No RSENSE Synchronous Step-Up DC/DC Controller U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1700 is a current mode synchronous step-up DC/DC controller that drives external N-channel and P-channel power MOSFETs using a constant frequency


    Original     		PDF LTC1700 550kHz 400kHz 750kHz 10-Lead Si9803 V/600mA V/75mA 600kHz V/200mA LT1517-5 919AS-IR8N

    2C10

    Abstract: LTC1700EMS DC349A SI3443DV SI6466DQ SI9803DY SI9804DY DC349
    Text: A B C GND E2 100pF C8 5 220pF C7 R3 2.2K E5 C6 0.1uF RUN JP2 E6 SW TG VOUT BG PGND SYNC/MODE RUN/SS VFB ITH SGND SYNC/MODE 5 4 3 2 1 U1 LTC1700EMS Vin 6 7 8 9 10 4 4 L1 1.5uH VIN 2.5V/3.3V E1 Q2 SI9804DY 4 C1 22uF C2 68uF OPTION 3 Q3 SI9804DY 4 5 6 7 8 1


    Original     		PDF 100pF 220pF LTC1700EMS SI9804DY SI6466DQ SI3443DV SI9803DY 330uF 2C10 LTC1700EMS DC349A SI3443DV SI6466DQ SI9803DY DC349

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    Si3446DV

    Abstract: MOSFET TSSOP-8 dual n-channel Si3456DV Si3457DV Si4420DY Si4466DY Si6410DQ Si6415DQ Si6466DQ
    Text: The New 32 Million-Cell Per Square Inch LITTLE FOOT TrenchFETs T A New Generation of TrenchFETs l l l l l S Two complete families announced Break all records for low on-resistance in small packages Half the specific RDS compared with previous power MOSFETs


    Original     		PDF Si3443DV Si6463DQ Si4463DY Si3446DV MOSFET TSSOP-8 dual n-channel Si3456DV Si3457DV Si4420DY Si4466DY Si6410DQ Si6415DQ Si6466DQ

    10uf 63v capacitor

    Abstract: LTC1700 LQN6C1R5M04 6TPB330M Siliconix mosfet guide LT1700 DC349A LTC1700EMS JMK316BJ106ML JMK325BJ226MM
    Text: DC349A INTRODUCTION DESCRIPTION Demonstration Circuit DC349A demonstrates a synchronous step-up DC/DC converter using the LTC1700 controller. The LTC1700 is a current mode No RSENSE synchronous step-up controller with up to 95% efficiency. Applications include 2.5V to 3.3V or 5V converters, 2.5V to 5V converters, singlecell Li-Ion to 5V applications or two cell AA to 3.3V or 5V applications.


    Original     		PDF DC349A LTC1700 550kHz 400kHz 750kHz. Si6466DQ Si3443DV 10uf 63v capacitor LQN6C1R5M04 6TPB330M Siliconix mosfet guide LT1700 LTC1700EMS JMK316BJ106ML JMK325BJ226MM

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    smd diode code PJ 1466

    Abstract: IC 741 OPAMP DATASHEET a in4 733 SMD SOT23 transistor MARK 1e Diode smd code PJ 1466 datasheet opamp 741 pj 2309 smd diode irlm2502 semiconductors cross index ACS750
    Text: ispPAC Power Manager II Family Handbook HB1007 Version 01.3, November 2009 ispPAC Power Manager II Family Handbook Table of Contents November 2009 Handbook HB1007 Section I. ispPAC Power Manager II Family Data Sheets ispPAC-POWR1220AT8 . 1-1


    Original     		PDF HB1007 HB1007 ispPAC-POWR1220AT8 ispPAC-POWR1014/A ispPAC-POWR607. ispPAC-POWR607 ispPAC-POWR1014/A smd diode code PJ 1466 IC 741 OPAMP DATASHEET a in4 733 SMD SOT23 transistor MARK 1e Diode smd code PJ 1466 datasheet opamp 741 pj 2309 smd diode irlm2502 semiconductors cross index ACS750

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original     		PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110

    smd Pj 2479

    Abstract: pj 2309 diode pj 2309 smd diode smd zener diode color code ISPPACPOWER1208 cny17 03 FDS6679 "pin-compatible" Cross Reference sot23 HB1007 SMD PJ 3236
    Text: ispPAC Power Manager II Family Handbook HB1007 Version 01.1, June 2008 ispPAC Power Manager II Family Handbook Table of Contents June 2008 Handbook HB1007 Section I. ispPAC Power Manager II Family Data Sheets ispPAC-POWR1220AT8 Data Sheet . 1-1


    Original     		PDF HB1007 HB1007 ispPAC-POWR1220AT8 ispPAC-POWR1014/A ispPAC-POWR607 LA-ispPAC-POWR1014/A AN6078, smd Pj 2479 pj 2309 diode pj 2309 smd diode smd zener diode color code ISPPACPOWER1208 cny17 03 FDS6679 "pin-compatible" Cross Reference sot23 SMD PJ 3236

    irlm2502

    Abstract: how mosfets connect parallel IRF3716 FDS6679 MBT50P03HDL an6048 Si2314EDS IRF7410 FDS6064N3 POWR1208
    Text: Using Power MOSFETs with Power Manager Devices April 2008 Application Note AN6048 Introduction Power MOSFETs are increasingly being used to switch local power supplies on PCB assemblies. The Lattice ispPAC -POWR1208 can be used in several ways to provide intelligent control of these devices for power supply


    Original     		PDF AN6048 -POWR1208 ispPAC-POWR1208 AN6043, 1-800-LATTICE ispPACPOWR1208" irlm2502 how mosfets connect parallel IRF3716 FDS6679 MBT50P03HDL an6048 Si2314EDS IRF7410 FDS6064N3 POWR1208

    Siliconix

    Abstract: S-54704 It83
    Text: SÌ6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET Vos (VJ Ros(on) i Q) ip (A) 0.014 @ Vqs = 4.5 V ±7.8 0.021 @ Vqs = 2-5 V ±6.3 e < f> " A 20 D O TSSOP-8 • UE * Source Pins 2, 3, 6 and 7 must be tied common. Top View Ô S' N-Channel MOSFET wtmmmm


    OCR Scan     		PDF 6466DQ PAR704-- 13-Oct-97 Si6466DQ S-54704-- Siliconix S-54704 It83