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    SI6463DQ Search Results

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    SI6463DQ Price and Stock

    Rochester Electronics LLC SI6463DQ

    P-CHANNEL MOSFET
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    DigiKey SI6463DQ Bulk 2,350 650
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    onsemi SI6463DQ

    MOSFET 20V 7.5A 1.5W - Bulk (Alt: SI6463DQ)
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    Avnet Americas SI6463DQ Bulk 4 Weeks 782
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    Vishay Siliconix SI6463DQ-T1

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    Bristol Electronics SI6463DQ-T1 33,000 7
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    SI6463DQ-T1 5,458
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    Vishay Siliconix SI6463DQ

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    Bristol Electronics SI6463DQ 5,458
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    Vishay Siliconix SI6463DQT1

    6.5 A, 20 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET (Also Known As: SI6463DQ-T1)
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    Quest Components SI6463DQT1 26,400
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    SI6463DQT1 26,400
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    SI6463DQT1 1,274
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    SI6463DQT1 1,274
    • 1 $1.08
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    • 100 $0.504
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    SI6463DQ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si6463DQ Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    SI6463DQ Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si6463DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI6463DQ-T1 Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF

    SI6463DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6463DQ

    Abstract: No abstract text available
    Text: Si6463DQ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


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    PDF Si6463DQ

    Si6463DQ

    Abstract: No abstract text available
    Text: Si6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.020 @ VGS = –4.5 V "6.5 0.030 @ VGS = –2.5 V "5.2 S* TSSOP-8 D 1 S 2 S 3 6 S G 4 5 D D Si6463DQ 8 D 7 S G * Source Pins 2, 3, 6 and 7 must be tied common.


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    PDF Si6463DQ 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.020 @ VGS = –4.5 V "6.5 0.030 @ VGS = –2.5 V "5.2 S* TSSOP-8 D 1 S 2 S 3 6 S G 4 5 D D Si6463DQ 8 D 7 S G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original
    PDF Si6463DQ 08-Apr-05

    Si6463DQ

    Abstract: No abstract text available
    Text: Si6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.020 @ VGS = –4.5 V "6.5 0.030 @ VGS = –2.5 V "5.2 S* TSSOP-8 D 1 S 2 S 3 6 S G 4 5 D D Si6463DQ 8 D 7 S G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original
    PDF Si6463DQ S-51477--Rev. 17-Feb-97

    Si6463DQ

    Abstract: No abstract text available
    Text: Si6463DQ P-Channel, 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.020 @ VGS = –4.5 V "6.5 0.030 @ VGS = –2.5 V "5.2 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6463DQ G D S S D *Source Pins 2, 3, 6 and 7 must be tied common. Top View


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    PDF Si6463DQ S-51477--Rev. 17-Feb-97

    6463 tube

    Abstract: 2502P CBHK741B019 F63TNR FDW2502P Si6463DQ
    Text: Si6463DQ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original
    PDF Si6463DQ 6463 tube 2502P CBHK741B019 F63TNR FDW2502P

    Untitled

    Abstract: No abstract text available
    Text: Si6463DQ P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.020 @ VGS = –4.5 V "6.5 0.030 @ VGS = –2.5 V "5.2 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6463DQ G D S S D *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original
    PDF Si6463DQ S-51477--Rev. 17-Feb-97

    74227

    Abstract: Si6463BDQ Si6463DQ Si6463DQ-T1 SI6463BDQ-T1-E3
    Text: Specification Comparison Vishay Siliconix Si6463BDQ vs. Si6463DQ Description: Package: Pin Out: P-Channel, 1.8 V G-S MOSFET TSSOP-8 Identical Part Number Replacements Si6463BDQ-T1-E3 Replaces Si6463DQ-T1-E3 Si6463BDQ-T1 Replaces Si6463DQ-T1 Summary of Performance


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    PDF Si6463BDQ Si6463DQ Si6463BDQ-T1-E3 Si6463DQ-T1-E3 Si6463BDQ-T1 Si6463DQ-T1 74227

    diode 8a 600v

    Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
    Text: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List


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    PDF Power247TM, diode 8a 600v 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


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    PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    Si3446DV

    Abstract: MOSFET TSSOP-8 dual n-channel Si3456DV Si3457DV Si4420DY Si4466DY Si6410DQ Si6415DQ Si6466DQ
    Text: The New 32 Million-Cell Per Square Inch LITTLE FOOT TrenchFETs T A New Generation of TrenchFETs l l l l l S Two complete families announced Break all records for low on-resistance in small packages Half the specific RDS compared with previous power MOSFETs


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    PDF Si3443DV Si6463DQ Si4463DY Si3446DV MOSFET TSSOP-8 dual n-channel Si3456DV Si3457DV Si4420DY Si4466DY Si6410DQ Si6415DQ Si6466DQ

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


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    PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


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    PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620