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    SI7613DN Search Results

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    SI7613DN Price and Stock

    Vishay Siliconix SI7613DN-T1-GE3

    MOSFET P-CH 20V 35A PPAK1212-8
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    DigiKey SI7613DN-T1-GE3 Reel 45,000 3,000
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    SI7613DN-T1-GE3 Cut Tape 7,051 1
    • 1 $0.73
    • 10 $0.594
    • 100 $0.4622
    • 1000 $0.3875
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    SI7613DN-T1-GE3 Digi-Reel 1
    • 1 $0.73
    • 10 $0.594
    • 100 $0.4622
    • 1000 $0.3875
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    Vishay Intertechnologies SI7613DN-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI7613DN-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7613DN-T1-GE3 Reel 45,000 17 Weeks 3,000
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    Mouser Electronics SI7613DN-T1-GE3 16,462
    • 1 $0.73
    • 10 $0.594
    • 100 $0.463
    • 1000 $0.388
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    Verical SI7613DN-T1-GE3 3,000 3,000
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    SI7613DN-T1-GE3 2,883 66
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    SI7613DN-T1-GE3 2,150 15
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    Newark SI7613DN-T1-GE3 Cut Tape 3,000
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    SI7613DN-T1-GE3 Reel 3,000
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    TTI SI7613DN-T1-GE3 Reel 9,000 3,000
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    Chip1Stop SI7613DN-T1-GE3 Cut Tape 2,883
    • 1 $0.385
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    • 100 $0.382
    • 1000 $0.374
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    EBV Elektronik SI7613DN-T1-GE3 18 Weeks 3,000
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    Vishay Intertechnologies SI7613DN-T1-GE3.

    Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:52.1W; No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI7613DN-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI7613DN-T1-GE3. Reel 3,000
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    Vishay Intertechnologies SI7613DN-T1-GE3DKR

    INSTOCK
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    Chip 1 Exchange SI7613DN-T1-GE3DKR 1,300
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    Vishay Huntington SI7613DN-T1-GE3

    MOSFET P-CH 20V 35A 1212-8 PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI7613DN-T1-GE3 21,700
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    • 100 $0.677
    • 1000 $0.452
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    SI7613DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI7613DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 35A 1212-8 PPAK Original PDF

    SI7613DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7613DN 2002/95/EC Si7613DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7613DN www.vishay.com Vishay Siliconix SPICE Device Model Si7613DN DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7613DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7613DN 2002/95/EC Si7613DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7613DN 2002/95/EC Si7613DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7613DN 2002/95/EC Si7613DN-T1-GE3 11-Mar-11

    MOSFET 4407

    Abstract: 4407 4407 mosfet CIRCUIT 4407 AN609
    Text: Si7613DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si7613DN AN609, 17-Mar-09 MOSFET 4407 4407 4407 mosfet CIRCUIT 4407 AN609

    Si7613DN-T1-GE3

    Abstract: TB-17 si7613
    Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7613DN 2002/95/EC Si7613DN-T1-GE3 18-Jul-08 TB-17 si7613

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7613DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7613DN 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7613DN 2002/95/EC Si7613DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477