si7615

Abstract: SI7615ADN SI7615A
Contextual Info: New Product Si7615ADN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0044 at VGS = - 10 V - 35a 0.0060 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a Qg (Typ.) 59 nC - 35 APPLICATIONS PowerPAK 1212-8

Si7615DN

Abstract: si7615
Contextual Info: New Product Si7615DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0039 at VGS = - 10 V - 35a 0.0055 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a - 35 Qg (Typ.) 62 nC • Halogen-free According to IEC 61249-2-21

SI7615A

Abstract: SI7615ADN
Contextual Info: SPICE Device Model Si7615ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SI7615ADN

Contextual Info: New Product Si7615ADN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0044 at VGS = - 10 V - 35a 0.0060 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a Qg (Typ.) 59 nC - 35 APPLICATIONS PowerPAK 1212-8

Si7615DN

Abstract: si7615
Contextual Info: New Product Si7615DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0039 at VGS = - 10 V - 35a 0.0055 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a - 35 Qg (Typ.) 62 nC APPLICATIONS PowerPAK 1212-8

si7615

Contextual Info: New Product Si7615DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0039 at VGS = - 10 V - 35a 0.0055 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a - 35 Qg (Typ.) 62 nC APPLICATIONS PowerPAK 1212-8

Si7615DN

Contextual Info: SPICE Device Model Si7615DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si7615DN

Abstract: si7615
Contextual Info: New Product Si7615DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0039 at VGS = - 10 V - 35a 0.0055 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a - 35 Qg (Typ.) 62 nC APPLICATIONS PowerPAK 1212-8

Si7615DN

Contextual Info: New Product Si7615DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0039 at VGS = - 10 V - 35a 0.0055 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a - 35 Qg (Typ.) 62 nC APPLICATIONS PowerPAK 1212-8

si7615

Abstract: AN609 Si7615DN
Contextual Info: Si7615DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: Si7615BDNT www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 0.0054 at VGS = -4.5V 0.0060 at VGS = -3.7 V 0.0083 at VGS = -2.5 V 0.0140 at VGS = -1.8 V -20 ID (A) a Qg (TYP.) -30 a 57 nC • TrenchFET Gen III P-Channel Power MOSFET

Contextual Info: New Product Si7615ADN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0044 at VGS = - 10 V - 35a 0.0060 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a Qg (Typ.) 59 nC - 35 APPLICATIONS PowerPAK 1212-8

Contextual Info: SPICE Device Model Si7615DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Vishay Intertechnology, Inc. Computer Portable Computers One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Portable Computers Notebooks 4 Ultrabooks 5 Tablet PCs 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Si7141

Abstract: SiA447DJ SI7615A
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

SI7615A

Abstract: LTC6802-1
Contextual Info: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors

Contextual Info: Vishay Intertechnology, Inc. Computer Portable Computers One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer ポータブルコンピューター ノートブック 4 ウルトラブック 5

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

balancer battery

Contextual Info: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors

SI4497

Contextual Info: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm